Recent Achievements in Oxide Transistors
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".
Deadline for manuscript submissions: 31 October 2025 | Viewed by 27
Special Issue Editors
Interests: compositional engineering of Cu-Doped SnO film for complementary metal oxide semiconductor technology
Interests: molecular beam epitaxy of III-V semiconductor compounds; growth on lattice mismatched substrates; strained layer superlattices; carrier recombination and transport in semiconductor heterostructures; optoelectronic devices and integrated circuits
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Oxide-based transistors are a dynamic and rapidly advancing field in modern electronics, bridging the expertise of materials scientists, device engineers, and solid-state physicists in a global effort to advance semiconductor technologies. While silicon-based technologies have long dominated the landscape, oxide transistors are emerging as versatile alternatives, offering functionalities that transcend conventional limitations. Their unique combination of high carrier mobility, optical transparency, and compatibility with low-temperature processing has positioned them at the forefront of innovation in displays, wearable electronics, and IoT devices. The evolution of oxide transistors has been marked by remarkable progress in material synthesis, interfacial control, and device architecture.
Fundamental questions, however, persist. The trade-off between mobility and stability in oxide transistor locks in its application limits. How can interfacial defects and charge trapping be minimized to achieve ultimate device reliability? What new functionalities arise from heterostructure engineering, or light-matter interactions in oxide channels? The interplay between electronic transport, interface engineering, and defect chemistry remains a rich area for exploration. Moreover, the integration of oxide transistors with emerging technologies, such as flexible electronics, neuromorphic computing, or novel memories, promises to redefine their role in future electronics.
This Special Issue, titled “Recent Achievements in Oxide Transistors”, seeks to highlight cutting-edge research and comprehensive reviews on oxide transistors, spanning fundamental materials science, device physics, and innovative applications. Contributions addressing novel fabrication methods, mechanism insights into carrier transport, advances in reliability, or disruptive applications are particularly encouraged.
We invite you to submit your latest findings, perspectives, or review articles to this Special Issue. Submissions will undergo rigorous peer review, and accepted papers will be published continuously in the journal. Detailed formatting guidelines and submission deadlines can be found on the journal’s website.
We look forward to your contributions in shaping this timely and impactful collection.
Dr. Penghui He
Dr. Dmitri Donetski
Guest Editors
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- novel oxide materials
- high mobility and robust stability
- advanced fabrication techniques
- device innovation and physics
- emergent phenomena or applications
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