Crystal Growth of III–V Semiconductors
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".
Deadline for manuscript submissions: closed (30 August 2025) | Viewed by 4010
Special Issue Editors
Interests: compound semiconductors; epitaxial growth; MOCVD; MBE; metamorphic; hetero-epitaxy; optoelectronics;
Interests: synthesis; 1D and 3D nanostructures; perovskite solar cells; solar cells
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
III–V semiconductors are binary, ternary, quaternary, quinary (and so on) alloys, containing elements from groups III (Al, Ga, In, B, and Tl) and V (N, P, As, Sb, and Bi) in the periodic table. They are widely applied in high-performance optoelectronic and electronic devices due to their superior electronic and optical properties, including high electron mobility, direct band gap, low exciton binding energy, and the ability to cover a vast bandgap energy range. The properties enable high speed, high temperature, high current, and high voltage in optoelectronic devices ranging from the ultraviolet to the terahertz band.
The epitaxial growth of III–V semiconductors is fundamental to these devices; high single-crystal quality, atomic-layer-scale controllability, and mass productive ability are provided by the utilization of metalorganic chemical vapor deposition, molecular beam epitaxy, liquid phase epitaxy, hydride vapor phase epitaxy, and others. Phosphides and arsenides have been fully developed and widely used in the communication, industry, energy, aerospace, defense, automotive, and healthcare fields. Nitrides are newly developed, and exciting breakthroughs have also been made regarding antimonides.
Coherent growth is the growth mode of compound semiconductor thin films, and the lattice mismatch between substrates and epitaxial layers fundamentally restrains the crystal quality. Recently, metamorphic growth, via graded buffer layers and the two-step growth technique, has been developed to overcome this limitation. Nitride growth on sapphire is one benefit of this technique. It can also provide the ability to grow III–V on silicon, which could be the best solution for the creation of light sources in silicon photonics.
The present Special Issue, entitled “Crystal Growth of III–V Semiconductors,” offers researchers in the field of III–V compound growth the opportunity to present new approaches that would enable better quality to be achieved, overcome the traditional limitation of coherent growth, and realize new applications via novel material combinations. The current status and roadmap for III–V semiconductor materials’ growth could also be determined.
Dr. Xin Wei
Dr. Sawanta S. Mali
Guest Editors
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Keywords
- epitaxy
- MOCVD
- MBE
- III–V semiconductor
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