Advanced on Nanoscale Materials in Photoelectric Properties and Devices
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: closed (30 July 2023) | Viewed by 4102
Special Issue Editors
Interests: photodetectors; low-dimensional materials; materials growth; device fabrication; photoelectric mechanisms
Interests: van der Waals epitaxial growth of large-area two-dimensional (2D) materials including graphene; transition metal chalcogenides (TMDs); development of optoelectronic devices from 2D materials; optoelectronic characterization of high-performance optoelectronic devices
Interests: infrared photodetectors; van der Waals homojunctions and heterojunctions; 2D materials; non-equilibrium carriers; avalanche multiplication effect
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Photodetectors convert optical signals into electrical signals and play an irreplaceable role in various fields, such as digital cameras, telecommunication, fire warning, and deep space exploration. To date, great progress including ultraviolet, visible, and infrared detectors has been made. However, the further improvement of traditional materials-based photodetectors meets huge challenges. It is very urgent to explore new materials and design new structures. Nanoscale materials with unique photoelectric, electric and optical properties attract enormous attention in recent years. As the dimension reduces, nanoscale materials can be classified into three types: two-dimensional materials (layered materials and nanosheets), one-dimensional materials (nanowires and nanotubes), and zero-dimensional materials (quantum dots and nanoparticles), which show great potential in novel and multifunctional photodetectors. For example, photodetectors based on layered materials with a broad bandgap ranging from 0 eV (graphene) to 6 eV (hexagonal boron nitride) can detect the light from the ultraviolet to the far-infrared, even the terahertz. Furthermore, due to no dangling bonds on the surface, layered materials can be randomly stacked into junctional devices. Meanwhile, mix-dimensional photodetectors could be fabricated and possess enhanced optoelectronic performance.
This Special Issue will present current and comprehensive progress on advanced photodetectors based on nanoscale materials. This includes unique and appealing photoelectric properties of nanoscale materials with different dimensions. Nanoscale material photodetectors exhibit excellent photoelectric performance and multifunctional applications by designing structures with an energy band engineering. We invite authors to contribute original research articles and review articles covering the current progress and improvement of nanoscale materials-based photodetectors.
In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:
- Two-dimensional material photodetectors;
- Van der Waals heterojunction photodetectors;
- One-dimensional materials photodetectors;
- Quantum dot photodetectors;
- Mix-dimensional photodetectors;
- Photoelectric properties and characterizations of nanoscale materials.
We look forward to receiving your contributions.
Dr. Zhen Wang
Dr. Longhui Zeng
Dr. Hailu Wang
Guest Editors
Manuscript Submission Information
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Keywords
- photodetectors
- two-dimensional materials
- nanowires
- quantum dots
- heterojunction
- mix-dimensional junction
- photoconduction
- photovoltaics
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