Epitaxial Growth of III-Nitride Hetero- and Nanostructures
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: 31 December 2024 | Viewed by 35
Special Issue Editors
Interests: Sc-doped aluminum nitride; molecular beam epitaxy; III-nitride heterostructures; photonic cyrstal micro-LED
Special Issue Information
Dear Colleagues,
Research on the epitaxial growth, design and fabrication of III-nitride wide-bandgap semiconductor hetero- and nanostructures is driving the development of next-generation power/RF electronics and optoelectronic devices. Advances in III-nitride hetero-/nanostructure growth techniques and design protocols promise new devices like photonic crystal nano-/micro-LEDs and lasers, AlGaN/GaN tunneling diodes, high-electron-mobility transistors (HEMTs) with regrown n+-GaN contacts, and multichannel GaN HEMTs. The recent emergence of scandium-doped aluminum nitride (ScxAl1-xN), a relatively new member of the III-nitride family, provides the potential to boost the performance of GaN HEMTs and significantly broadens the application of III-nitrides to ferroelectric devices, RF filters and acoustic sensors.
This Special Issue will address recent progress on the epitaxial growth, material characterization, structural design and engineering, and device applications of III-nitride hetero-/nanostructures, with an emphasis on ScxAl1-xN hetero-/nanostructures. Potential topics include, but are not limited to, the following:
- Epitaxial growth and characterization of III-nitride materials, particularly ScAlN;
- Transport properties of III-nitride heterostructures;
- Ferroelectric properties and devices of ScAlN;
- Design and fabrication of III-nitride micro-LEDs;
- AlN/ScAlN acoustic-wave RF filters, resonators and sensors.
We are pleased to invite you to submit a contribution to this Special Issue of Nanomaterials, and we look forward to receiving your contributions.
Dr. Shizhao Fan
Dr. Ping Wang
Guest Editors
Manuscript Submission Information
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Keywords
- III-nitride heterostructure
- two-dimensional electron gas
- high-electron-mobility transistor
- scandium-doped aluminum nitride
- ferroelectric
- micro-LEDs
- acoustic-wave devices
