Nitride Nanostructures: Growth Methods and Device Applications
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".
Deadline for manuscript submissions: 20 February 2025 | Viewed by 64
Special Issue Editor
Special Issue Information
Dear Colleagues,
Gallium nitride and its alloys are widely used in light emitting diodes (LEDs), laser diodes, photodetectors, and high electron mobility transistors (Hemts) for high-power, high-frequency, and high-temperature electronic applications. At the same time, the combination of Ⅲ-nitride and two-dimensional materials, such as graphene, is expected to solve the problem of traditional epitaxy, which difficult to peel off.
Due to the optimization of epitaxy technology, the quality of triplex nitride materials has been greatly improved, but there are still various problems. These problems include the growth of Ⅲ-nitride materials, defect control, and doping efficiency.
This journal focuses on the scientific and engineering aspects of Ⅲ-nitride materials and Ⅲ-nitrides combined with two-dimensional materials, the description of unprecedented physical phenomena that can be observed in the fundamental properties of materials, material growth techniques, device structure design, and the realization of state-of-the-art electronic devices.
In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:
- Ⅲ-nitride materials growth;
- Defect control;
- Doping efficiency;
- Device design;
- Reliability analysis;
- Ⅲ-nitride combination with two-dimensional materials.
We look forward to receiving insightful contributions.
Dr. Xiaowei Zhou
Guest Editor
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Keywords
- Ⅲ-nitride
- photoelectronic device
- electronic devices
- defect
- doping efficiency
- reliability analysis
- two-dimensional materials
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