Power Scaling of Semiconductor Lasers
A special issue of Photonics (ISSN 2304-6732).
Deadline for manuscript submissions: closed (30 June 2023) | Viewed by 333
Special Issue Editor
Interests: nanophotonics; hybrid integration of optical devices and systems; optical periodic structures and coupled resonators; high power solid-state and fiber lasers; THz optics
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Scaling up on-chip diode laser power is of great importance for many emerging applications, such as integrated nonlinear optics, remote sensing, free space communication, infrared counter measure, and light detection and ranging (LIDAR). In recent years, great progress has been made in the power scaling of semiconductor lasers, at both the single emitter and integrated system level. Through new epi, waveguide, and cavity design, the output power of a single semiconductor laser emitter has been greatly increased while maintaining the single spatial mode. By use of various beam combining methods, the power and brightness of semiconductor lasers could be further improved. For this Special Issue, you are invited to submit research papers on advances in the power scaling of semiconductor lasers. Specific areas of interest in the topic include (but are not limited to) the following:
- New epi, waveguide, and cavity design for power scaling;
- Wavelength beam combining;
- Coherent beam combining;
- Direct diode laser systems;
- Hybrid photonic integration for power scaling.
Dr. Lin Zhu
Guest Editor
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