Gallium Nitride Sensors
A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Sensor Materials".
Deadline for manuscript submissions: 30 September 2024 | Viewed by 114
Special Issue Editor
Interests: microelectronic devices and circuits; introduction to electrical engineering; processing and characterization of semiconductor materials and devices
Special Issue Information
Dear Colleagues,
Gallium nitride (GaN) and aluminum gallium nitride (AlGaN) devices are attractive candidates for sensing applications in harsh environments due to their wide bandgap, radiation hardness, high-temperature tolerance, and chemical inertness. GaN/AlGaN high-electron-mobility transistors (HEMTs) can be functionalized to fabricate chemical sensors. Schottky barrier diodes (SBDs) and HEMTs can be used as temperature sensors. GaN micro-electro-mechanical system (MEMS) structures have been used for sensing applications. GaN nanowires and quantum dots have been used for chemical sensing. This Special Issue explores the state-of-the-art in using GaN-based devices for sensing applications, including, but not limited to, the examples highlighted above.
Dr. Yaser M. Haddara
Guest Editor
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- gallium nitride
- aluminum gallium nitride
- GaN/AlGaN-based sensors
- high-temperature sensors
- gas sensors
- GaN/AlGaN high-electron-mobility transistors
- GaN/AlGaN Schottky barrier diodes
- GaN quantum dots
