Search Results (4)

A novel double-impurity doping process for silicon (Si) surfaces was developed, utilizing nanosecond-laser melting of an 11 nm thick gold (Au) top film and a Si wafer substrate in a laser plasma-activated liquid nitrogen (LN) environment. Scanning electron microscopy revealed a fluence- and exposure-independent surface micro-spike topography, while energy-dispersive X-ray spectroscopy identified minor Au (~0.05 at. %) and major N (~1–2 at. %) dopants localized within a 0.5 μm thick surface layer and the slight surface post-oxidation of the micro-relief (oxygen (O), ~1.5–2.5 at. %). X-ray photoelectron spectroscopy was used to identify the bound surface (SiN_x) and bulk doping chemical states of the introduced nitrogen (~10 at. %) and the metallic (<0.01 at. %) and cluster (<0.1 at. %) forms of the gold dopant, and it was used to evaluate their depth distributions, which were strongly affected by the competition between gold dopants due to their marginal local concentrations and the other more abundant dopants (N, O). In this study, 532 nm Raman microspectroscopy indicated a slight reduction in the crystalline order revealed in the second-order Si phonon band; the tensile stresses or nanoscale dimensions of the resolidified Si nano-crystallites envisioned by the main Si optical–phonon peak; a negligible a-Si abundance; and a low-wavenumber peak of the Si₃N₄ structure. In contrast, Fourier transform infrared (FT-IR) reflectance and transmittance studies exhibited only broad structureless absorption bands in the range of 600–5500 cm⁻¹ related to dopant absorption and light trapping in the surface micro-relief. The room-temperature electrical characteristics of the laser double-doped Si layer—a high carrier mobility of 1050 cm²/Vs and background carrier sheet concentration of ~2 × 10¹⁰ cm⁻² (bulk concentration ~10¹⁴–10¹⁵ cm⁻³)—are superior to previously reported parameters of similar nitrogen-implanted/annealed Si samples. This novel facile double-element laser-doping procedure paves the way to local maskless on-demand introductions of multiple intra-gap intermediate donor and acceptor bands in Si, providing related multi-wavelength IR photoconductivity for optoelectronic applications. Full article

The absorption of light in the near-infrared region of the electromagnetic spectrum by Au-hyperdoped Si has been observed. While silicon photodetectors in this range are currently being produced, their efficiency is low. Here, using the nanosecond and picosecond laser hyperdoping of thin amorphous Si films, their compositional (energy-dispersion X-ray spectroscopy), chemical (X-ray photoelectron spectroscopy), structural (Raman spectroscopy) and IR spectroscopic characterization, we comparatively demonstrated a few promising regimes of laser-based silicon hyperdoping with gold. Our results indicate that the optimal efficiency of impurity-hyperdoped Si materials has yet to be achieved, and we discuss these opportunities in light of our results. Full article

Natural diamonds with a rich variety of optically blind and optically active nitrogen impurity centers were explored at a nano/microscale on the surface and in bulk by a number of advanced chemical and structural analytical tools in order to achieve a comprehensive characterization by establishing enlightening links between their analysis results. First, novel compositional relationships were established between high-energy X-ray photoelectron spectroscopy (XPS) and low-energy Fourier-transform infrared vibrational spectroscopy (FT-IR) signals of nitrogen impurity defects acquired in the microscopy mode at the same positions of the diamond surface, indicating the verification XPS modality for qualitative and quantitative FT-IR analysis of high concentrations of nitrogen and other chemical impurity defects in diamond. Second, depth-dependent spatial distributions of diverse photoluminescence (PL)-active nitrogen defects were acquired in the confocal scanning mode in an octahedral diamond and then for the first time corrected to the related Raman signals of the carbon lattice to rule out artefacts of the confocal parameter and to reveal different micron-scale ontogenetic layers in the impurity distributions on its surface. Third, intriguing connections between local structural micro-scale defects (dislocation slip bands of plastic deformation zones) visualized by optical microscopy and Raman microspectroscopy, and related distributions of stress-sensitive PL-active nitrogen impurity defects in the proximity of these planes inside bulk diamonds were revealed. These findings demonstrate the broad instrumental opportunities for comprehensive in situ studies of the chemical, structural, and mechanical micro-features in diamonds, from the surface into bulk. Full article

The detection of difenidol hydrochloride, which is a drug that is widely used for treating the nausea and vomiting symptoms caused by certain diseases, has been increasingly involved in cases of suicide via overdosing and of drug poisoning in children. A novel electrochemiluminescence (ECL) sensor for the simple and effective detection of difenidol hydrochloride was fabricated by modifying a glassy carbon electrode with three-dimensional carbon nanofibers (3D-CNFs). The 3D-CNFs were synthesized by electrospinning a mixture of montmorillonite (MMT) and polyacrylonitrile, carbonizing the electrospun product, and etching it with hydrofluoric acid. The form and structure of the 3D-CNFs was analyzed via scanning electron microscopy, X-ray photoelectron spectroscopy, and Raman microspectroscopy. According to the experimental results obtained using the modified electrodes, a good linear relationship was found between peak intensity and difenidol concentration (y = 868.14x − 61.04, R² = 0.999), with a relatively low detection limit (8.64 × 10⁻¹⁰ mol·L⁻¹ (S/N = 3)). In addition, our approach exhibited good recovery values ranging from 98.99% to 102.28%. The proposed novel ECL sensor has wide application prospects for the detection of difenidol hydrochloride. Full article