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Search Results (607)

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Keywords = amorphous silicon

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27 pages, 1784 KB  
Review
Review on Tribological and Corrosion Properties of Amorphous Silicon-Based Coatings Fabricated by Chemical Vapor Deposition
by Xin Wang, Bo Zhang, Bingjie Xiao, Rongyu Sun, Wenqi Zhao, Li Cui and Peter K. Liaw
Coatings 2025, 15(9), 1016; https://doi.org/10.3390/coatings15091016 - 1 Sep 2025
Abstract
Chemical vapor deposition (CVD) is a crucial technique for fabricating high-performance amorphous silicon coatings, leveraging its process flexibility and microstructural controllability. Optimizing processes like hot-wire chemical vapor deposition, plasma-enhanced chemical vapor deposition, and catalytic chemical vapor deposition enable precise regulation of coating density, [...] Read more.
Chemical vapor deposition (CVD) is a crucial technique for fabricating high-performance amorphous silicon coatings, leveraging its process flexibility and microstructural controllability. Optimizing processes like hot-wire chemical vapor deposition, plasma-enhanced chemical vapor deposition, and catalytic chemical vapor deposition enable precise regulation of coating density, surface roughness, and chemical bonding. These amorphous silicon coatings exhibit outstanding tribological properties and exceptional corrosion resistance, primarily attributed to their unique amorphous structure eliminating grain boundary defects and forming dense passivation films. Future research should focus on intelligent process development, multi-field coupling failure analysis, environmental friendliness enhancement, and lifespan prediction models to advance this technology. Full article
(This article belongs to the Section Corrosion, Wear and Erosion)
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9 pages, 2952 KB  
Communication
Interfacial Polarization Mechanism in Image Sticking of Polyimide-Based Flexible OLEDs
by Zhipeng Li, Haowen Li, Dawei Ma, Baojie Zhao and Yanbo Li
Polymers 2025, 17(17), 2333; https://doi.org/10.3390/polym17172333 - 28 Aug 2025
Viewed by 205
Abstract
Organic light-emitting diodes (OLEDs) have emerged as a critical battleground in display technology due to their self-emissive and foldable properties. However, the adoption of polyimide (PI) as a flexible substrate material introduces technical challenges, particularly image sticking. This study proposes an interfacial polarization [...] Read more.
Organic light-emitting diodes (OLEDs) have emerged as a critical battleground in display technology due to their self-emissive and foldable properties. However, the adoption of polyimide (PI) as a flexible substrate material introduces technical challenges, particularly image sticking. This study proposes an interfacial polarization mechanism to explain this phenomenon, confirmed through dielectric and ferroelectric spectroscopy. The results show that introducing an amorphous silicon (α-Si) interlayer significantly improves interface compatibility, increasing the polarization response frequency from 74 Hz to 116 Hz and reducing residual polarization strength from 2.81 nC/cm2 to 1.00 nC/cm2. Practical tests on OLED devices demonstrate that the optimized structure (PI/α-Si/SiO2) lowers the image sticking score from 3.46 to 1.67, validating the proposed mechanism. This research provides both theoretical insights and practical solutions for mitigating image sticking in flexible OLED displays. Full article
(This article belongs to the Section Smart and Functional Polymers)
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46 pages, 7349 KB  
Review
Convergence of Thermistor Materials and Focal Plane Arrays in Uncooled Microbolometers: Trends and Perspectives
by Bo Wang, Xuewei Zhao, Tianyu Dong, Ben Li, Fan Zhang, Jiale Su, Yuhui Ren, Xiangliang Duan, Hongxiao Lin, Yuanhao Miao and Henry H. Radamson
Nanomaterials 2025, 15(17), 1316; https://doi.org/10.3390/nano15171316 - 27 Aug 2025
Viewed by 204
Abstract
Uncooled microbolometers play a pivotal role in infrared detection owing to their compactness, low power consumption, and cost-effectiveness. This review comprehensively summarizes recent progress in thermistor materials and focal plane arrays (FPAs), highlighting improvements in sensitivity and integration. Vanadium oxide (VOx) [...] Read more.
Uncooled microbolometers play a pivotal role in infrared detection owing to their compactness, low power consumption, and cost-effectiveness. This review comprehensively summarizes recent progress in thermistor materials and focal plane arrays (FPAs), highlighting improvements in sensitivity and integration. Vanadium oxide (VOx) remains predominant, with Al-doped films via atomic layer deposition (ALD) achieving a temperature coefficient of resistance (TCR) of −4.2%/K and significant 1/f noise reduction when combined with single-walled carbon nanotubes (SWCNTs). Silicon-based materials, such as phosphorus-doped hydrogenated amorphous silicon (α-Si:H), exhibit a TCR exceeding −5%/K, while titanium oxide (TiOx) attains TCR values up to −7.2%/K through ALD and annealing. Emerging materials including GeSn alloys and semiconducting SWCNT networks show promise, with SWCNTs achieving a TCR of −6.5%/K and noise equivalent power (NEP) as low as 1.2 mW/√Hz. Advances in FPA technology feature pixel pitches reduced to 6 μm enabled by vertical nanotube thermal isolation, alongside the 3D heterogeneous integration of single-crystalline Si-based materials with readout circuits, yielding improved fill factors and responsivity. State-of-the-art VOx-based FPAs demonstrate noise equivalent temperature differences (NETD) below 30 mK and specific detectivity (D*) near 2 × 1010 cm⋅Hz 1/2/W. Future advancements will leverage materials-driven innovation (e.g., GeSn/SWCNT composites) and process optimization (e.g., plasma-enhanced ALD) to enable ultra-high-resolution imaging in both civil and military applications. This review underscores the central role of material innovation and system optimization in propelling microbolometer technology toward ultra-high resolution, high sensitivity, high reliability, and broad applicability. Full article
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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18 pages, 6433 KB  
Article
Study on Nano-Grinding Characteristics and Formation Mechanism of Subsurface Damage in Monocrystalline Silicon
by Haipeng Yan, Haining Zhang, Siyuan Cao and Chao Wang
Micromachines 2025, 16(9), 976; https://doi.org/10.3390/mi16090976 - 25 Aug 2025
Viewed by 349
Abstract
Monocrystalline silicon is an excellent semiconductor material for integrated circuits. Its surface quality has an enormous effect on its service life. The surfaces are formed by ultra-precision machining using nano-grinding, one of the technologies that can achieve surface roughness at the nano- or [...] Read more.
Monocrystalline silicon is an excellent semiconductor material for integrated circuits. Its surface quality has an enormous effect on its service life. The surfaces are formed by ultra-precision machining using nano-grinding, one of the technologies that can achieve surface roughness at the nano- or sub-nano-scale. Therefore, subsurface damage of monocrystalline silicon in nano-grinding was studied by establishing a molecular dynamics simulation model, and the impact of machining parameters on the force–thermal behavior was analyzed. The results reveal that the mechanism of subsurface damage is mainly structural phase transformation and amorphization. In nano-grinding of monocrystalline silicon, the tangential grinding force has a relatively major role in material removal. With increasing grinding depth and grinding speed, the grinding heat rises, and a certain degree of high temperature strengthens the toughness of the material, improving the subsurface quality of monocrystalline silicon. Therefore, subsurface damage in monocrystalline silicon can be controlled by reducing the grinding depth and increasing the grinding speed. Full article
(This article belongs to the Special Issue Functional Materials and Microdevices, 2nd Edition)
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15 pages, 1227 KB  
Article
Cellular Signal Detection by Hydrogenated Amorphous Silicon Photosensitive Chip with Electroexcitation
by Fengyan Hou, Jianjun Dong, Xia Wang, Qiuyang Deng, M. James C. Crabbe and Zuobin Wang
Sensors 2025, 25(17), 5255; https://doi.org/10.3390/s25175255 - 23 Aug 2025
Viewed by 680
Abstract
Based on the photoconductive effect of photosensitive films, a designed light pattern was projected onto a hydrogenated amorphous silicon (a-Si:H) photosensitive chip to generate virtual light-induced electrodes for cellular electrical detection. To obtain high-quality cellular signals, this study aims to explore the effect [...] Read more.
Based on the photoconductive effect of photosensitive films, a designed light pattern was projected onto a hydrogenated amorphous silicon (a-Si:H) photosensitive chip to generate virtual light-induced electrodes for cellular electrical detection. To obtain high-quality cellular signals, this study aims to explore the effect of electrical excitation on a-Si:H photosensitive chip. Firstly, the electrochemical impedance spectroscopy (EIS) and volt-ampere characteristics of the a-Si:H photosensitive chip were characterized. EIS data were fitted to extract equivalent circuit models (ECMs) for both the chip and system. Then analog experiments were performed to verify the ECMs, and the results were consistent with the circuit simulation. Finally, applied alternating current (AC) or direct current (DC) signals to the chip and recorded the electrical signals of the cultured cardiomyocytes on the a-Si:H photosensitive chip. The results demonstrated that applying a high-frequency small AC signal to the chip reduced the background noise of the system by approximately 85.1%, and applying a DC bias increased the amplitude of the detection signal by approximately 142.7%. Consequently, the detection performance of the a-Si:H photosensitive chip for weak bioelectrical signals was significantly enhanced, advancing its applicability in cellular electrophysiological studies. Full article
(This article belongs to the Section Biosensors)
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14 pages, 19891 KB  
Article
Investigating Surface Morphology and Subsurface Damage Evolution in Nanoscratching of Single-Crystal 4H-SiC
by Jianpu Xi, Xinxing Ban, Zhen Hui, Wenlan Ba, Lijuan Deng and Hui Qiu
Micromachines 2025, 16(8), 935; https://doi.org/10.3390/mi16080935 - 14 Aug 2025
Viewed by 470
Abstract
Single-crystal 4H silicon carbide (4H-SiC) is a key substrate material for third-generation semiconductor devices, where surface and subsurface integrity critically affect performance and reliability. This study systematically examined the evolution of surface morphology and subsurface damage (SSD) during nanoscratching of 4H-SiC under varying [...] Read more.
Single-crystal 4H silicon carbide (4H-SiC) is a key substrate material for third-generation semiconductor devices, where surface and subsurface integrity critically affect performance and reliability. This study systematically examined the evolution of surface morphology and subsurface damage (SSD) during nanoscratching of 4H-SiC under varying normal loads (0–100 mN) using a nanoindenter equipped with a diamond Berkovich tip. Scratch characteristics were assessed using scanning electron microscopy (SEM), while cross-sectional SSD was characterised via focused ion beam (FIB) slicing and transmission electron microscopy (TEM). The results revealed three distinct material removal regimes: ductile removal below 14.5 mN, a brittle-to-ductile transition between 14.5–59.3 mN, and brittle removal above 59.3 mN. Notably, substantial subsurface damage—including median cracks exceeding 4 μm and dislocation clusters—was observed even within the transition zone where the surface appeared smooth. A thin amorphous layer at the indenter-substrate interface suppressed immediate surface defects but promoted subsurface damage nucleation. Crack propagation followed slip lines or their intersections, demonstrating sensitivity to local stress states. These findings offer important insights into nanoscale damage mechanisms, which are essential for optimizing precision machining processes to minimise SSD in SiC substrates. Full article
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15 pages, 4099 KB  
Article
Pulsed Laser Annealing of Deposited Amorphous Carbon Films
by Arianna D. Rivera, Eitan Hershkovitz, Panagiotis Panoutsopoulos, Manny X. de Jesus Lopez, Bradley Simpson, Honggyu Kim, Rajaram Narayanan, Jesse Johnson and Kevin S. Jones
C 2025, 11(3), 60; https://doi.org/10.3390/c11030060 - 8 Aug 2025
Viewed by 479
Abstract
Pulsed laser annealing (PLA) was performed on a 0.3 μm thick hydrogenated amorphous carbon (a-C:H) film deposited on silicon substrate by plasma-enhanced chemical vapor deposition (PECVD). The 532 nm, 32 ns PLA ranged in fluence from 0.2 to 0.94 J cm−2. [...] Read more.
Pulsed laser annealing (PLA) was performed on a 0.3 μm thick hydrogenated amorphous carbon (a-C:H) film deposited on silicon substrate by plasma-enhanced chemical vapor deposition (PECVD). The 532 nm, 32 ns PLA ranged in fluence from 0.2 to 0.94 J cm−2. There were no visible signs of film delamination over the entire fluence range for a single pulse. As the fluence increased, graphitization of the amorphous film bulk was observed. However, at the near surface of the film, there was a concomitant increase in sp3 content. The sp3 bonding observed is the result of the formation of a thin diamond-like layer on the surface of the carbon film. Along with increasing laser fluence, the film swelled by 75% up to 0.6 J cm−2. In addition, carbon fiber formation was observed at 0.6 J cm−2, increasing in size and depth up through 0.94 J cm−2. The origin of this transformation may be associated with a rapid outgassing of hydrogen from the amorphous carbon during the PLA step. Additionally, there was a dramatic increase in the visible light absorption of these thin films with increasing laser fluence, despite the films being less than a micron thick. These results suggest that PLA of a-C:H film is a useful method for modifying the surface structure for optical or electrochemical applications without film ablation. Full article
(This article belongs to the Special Issue Carbon Functionalization: From Synthesis to Applications)
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18 pages, 3886 KB  
Article
Bio-Desilication of Coal Fly Ash and the Impacts on Critical Metal Recovery
by Shulan Shi, Ting Chen, Simeng Ren and Jinhe Pan
Metals 2025, 15(8), 891; https://doi.org/10.3390/met15080891 - 8 Aug 2025
Viewed by 393
Abstract
Critical metals such as rare earth elements (REEs) are primarily associated with silicates and aluminosilicates in coal fly ash, resulting in poor REE recovery. Silicate bacteria can decompose silicate minerals and release silicon, but their impact on REE extraction remains unclear. In this [...] Read more.
Critical metals such as rare earth elements (REEs) are primarily associated with silicates and aluminosilicates in coal fly ash, resulting in poor REE recovery. Silicate bacteria can decompose silicate minerals and release silicon, but their impact on REE extraction remains unclear. In this study, two coal fly ash samples with different origins and combustion methods were bioleached by Paenibacillus mucilaginosus, and the effects of bio-desilication on REE leaching were examined. First, the optimal bio-desilication conditions were determined as a pulp density of 1%, an initial pH of 7.0 and an initial cell concentration OD600 = 0.2. Compared to circulating fluidized bed (CFB) coal fly ash, silicon in pulverized coal furnace (PCF) coal fly ash was more difficult to dissolve by P. mucilaginosus. After bio-desilication, the acid leaching rate of REEs improved by 8–15% for CFB coal fly ash but only 4–5% for the PCF sample. Further investigation found that the surface turned rough and the specific surface area of coal fly ash increased after bio-desilication, which are conducive to REE extraction. Additionally, there was more quartz and mullite in PCF coal fly ash, which are more resistant to biological corrosion than amorphous silicate. The results demonstrate that bio-desilication can improve REE recovery, providing new perspectives for the low-cost green utilization of coal fly ash. Full article
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22 pages, 4383 KB  
Article
High-Yield Precursor-Derived Si-O Ceramics: Processing and Performance
by Xia Zhang, Bo Xiao, Yongzhao Hou and Guangwu Wen
Materials 2025, 18(15), 3666; https://doi.org/10.3390/ma18153666 - 4 Aug 2025
Viewed by 311
Abstract
The precursor-derived ceramic route is recognized as an advanced and efficient technique for fabricating ceramic matrix composites, particularly suitable for the development and microstructural tailoring of continuous fiber-reinforced ceramic matrix composites. In this work, octamethylcyclotetrasiloxane and tetravinylcyclotetrasiloxane were employed as monomers to synthesize [...] Read more.
The precursor-derived ceramic route is recognized as an advanced and efficient technique for fabricating ceramic matrix composites, particularly suitable for the development and microstructural tailoring of continuous fiber-reinforced ceramic matrix composites. In this work, octamethylcyclotetrasiloxane and tetravinylcyclotetrasiloxane were employed as monomers to synthesize a branched siloxane via ring-opening polymerization. A subsequent hydrosilylation reaction led to the formation of polyvinylsiloxane with a three-dimensional crosslinked structure. The precursor exhibited excellent fluidity, adjustable viscosity, and superior thermosetting characteristics, enabling efficient impregnation and densification of reinforcements through the polymer infiltration and pyrolysis process. Upon pyrolysis, the polyvinylsiloxane gradually converted from an organic polymer to an amorphous inorganic ceramic phase, yielding silicon oxycarbide ceramics with a high ceramic yield of 81.3%. Elemental analysis indicated that the resulting ceramic mainly comprised silicon and oxygen, with a low carbon content. Furthermore, the material demonstrated a stable dielectric constant (~2.5) and low dielectric loss (<0.01), which are beneficial for enhanced thermal stability and dielectric performance. These findings offer a promising precursor system and process reference for the low-cost production of high-performance, multifunctional ceramic matrix composites with strong potential for engineering applications. Full article
(This article belongs to the Special Issue Processing and Microstructure Design of Advanced Ceramics)
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16 pages, 2036 KB  
Article
Scalable Chemical Vapor Deposition of Silicon Carbide Thin Films for Photonic Integrated Circuit Applications
by Souryaya Dutta, Alex Kaloyeros, Animesh Nanaware and Spyros Gallis
Appl. Sci. 2025, 15(15), 8603; https://doi.org/10.3390/app15158603 - 2 Aug 2025
Viewed by 639
Abstract
Highly integrable silicon carbide (SiC) has emerged as a promising platform for photonic integrated circuits (PICs), offering a comprehensive set of material and optical properties that are ideal for the integration of nonlinear devices and solid-state quantum defects. However, despite significant progress in [...] Read more.
Highly integrable silicon carbide (SiC) has emerged as a promising platform for photonic integrated circuits (PICs), offering a comprehensive set of material and optical properties that are ideal for the integration of nonlinear devices and solid-state quantum defects. However, despite significant progress in nanofabrication technology, the development of SiC on an insulator (SiCOI)-based photonics faces challenges due to fabrication-induced material optical losses and complex processing steps. An alternative approach to mitigate these fabrication challenges is the direct deposition of amorphous SiC on an insulator (a-SiCOI). However, there is a lack of systematic studies aimed at producing high optical quality a-SiC thin films, and correspondingly, on evaluating and determining their optical properties in the telecom range. To this end, we have studied a single-source precursor, 1,3,5-trisilacyclohexane (TSCH, C3H12Si3), and chemical vapor deposition (CVD) processes for the deposition of SiC thin films in a low-temperature range (650–800 °C) on a multitude of different substrates. We have successfully demonstrated the fabrication of smooth, uniform, and stoichiometric a-SiCOI thin films of 20 nm to 600 nm with a highly controlled growth rate of ~0.5 Å/s and minimal surface roughness of ~5 Å. Spectroscopic ellipsometry and resonant micro-photoluminescence excitation spectroscopy and mapping reveal a high index of refraction (~2.7) and a minimal absorption coefficient (<200 cm−1) in the telecom C-band, demonstrating the high optical quality of the films. These findings establish a strong foundation for scalable production of high-quality a-SiCOI thin films, enabling their application in advanced chip-scale telecom PIC technologies. Full article
(This article belongs to the Section Materials Science and Engineering)
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24 pages, 4347 KB  
Article
Diatomaceous Earth Supplementation as a Bioavailable Silicon Source Modulates Postprandial Lipid Metabolism in Healthy Female Rats
by Rocío Redondo-Castillejo, Marina Hernández-Martín, Jousef Ángel Issa-García, Aránzazu Bocanegra, Alba Garcimartín, Adrián Macho-González, Sara Bastida, Francisco J. Sánchez-Muniz, Juana Benedí and M. Elvira López-Oliva
Nutrients 2025, 17(15), 2452; https://doi.org/10.3390/nu17152452 - 28 Jul 2025
Viewed by 635
Abstract
Background/Objectives: Diatomaceous earth (DE), a natural substance rich in amorphous silica and recognized as a food additive, is gaining attention as a dietary silicon supplement. However, its bioavailability and impact on lipid digestion and absorption remain poorly characterized. This study aimed to investigate [...] Read more.
Background/Objectives: Diatomaceous earth (DE), a natural substance rich in amorphous silica and recognized as a food additive, is gaining attention as a dietary silicon supplement. However, its bioavailability and impact on lipid digestion and absorption remain poorly characterized. This study aimed to investigate silicon bioavailability after short-term DE supplementation and its effects on postprandial glycemia and triglyceridemia, the expression of lipid metabolism-related proteins, and the modulation of the intestinal mucosal barrier. Methods: Female Wistar rats received daily oral supplementation of DE (equivalent to 2 or 4 mg silicon/kg body weight) for one week. Silicon digestibility, excretion, and hepatic accumulation were quantified. Postprandial glycemia and triglyceridemia were monitored. Lipid profile was analyzed by HPSEC in gastric and intestinal contents. Jejunal morphology and mucin-secreting cells were assessed histologically. Lipid metabolism markers were evaluated by immunohistochemistry and Western blot in both intestinal and hepatic tissues. Results: DE supplementation enhanced silicon absorption and increased hepatic levels. Fecal output and moisture content were also elevated, especially at the higher dose. DE significantly reduced postprandial triglyceridemia and consequently increased luminal triglyceride retention. These changes were associated with decreased jejunal levels of IFABP, ACAT2, and MTP, as well as reduced hepatic levels of MTP and LDLr, alongside increased levels of ABCG5/G8 and LXRα/β, indicating a partial blockage of lipid absorption and enhanced cholesterol efflux. The effects on the intestinal barrier were evidenced by villi shortening and an increase in mucin-producing cells. Conclusion: Food-grade DE is a bioavailable source of silicon with hypolipidemic potential, mainly by reducing intestinal lipid absorption. This is supported by lower postprandial triglycerides, increased luminal lipid retention, and decreased expression of lipid transport proteins. The study in healthy female rats underscores the importance of sex-specific responses and supports DE as a dietary strategy to improve lipid metabolism. Full article
(This article belongs to the Section Lipids)
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17 pages, 4072 KB  
Article
Mechanistic Insights into Brine Domain Assembly Regulated by Natural Potential Field: A Molecular Dynamics Exploration in Porous Media
by Xiaoman Leng, Yajun Wang, Yueying Wang, Zhixue Sun, Shuangyan Kou, Ruidong Wu, Yifan Xu and Yufeng Jiang
Processes 2025, 13(8), 2355; https://doi.org/10.3390/pr13082355 - 24 Jul 2025
Viewed by 229
Abstract
The behavior of brine solution in the porous media of the strata is of great significance for geological environment regulation. In this study, a molecular dynamics model with silicon dioxide walls was constructed to reveal the regulatory mechanism of the natural potential of [...] Read more.
The behavior of brine solution in the porous media of the strata is of great significance for geological environment regulation. In this study, a molecular dynamics model with silicon dioxide walls was constructed to reveal the regulatory mechanism of the natural potential of the electric field on cluster aggregation. It was found that the critical electric field intensity was 7 V/m. When the electric field intensity was lower than this value, the aggregation rate was only increased by 0.73 times due to thermal motion; when it was higher than this value, the rate increased sharply by 3.2 times due to the dominant effect of electric field force. The microscopic structure analysis indicated that the strong electric field induced the transformation of clusters from fractal structure into an amorphous structure (the index of the order degree increased by 58%). The directional regulation experiments confirmed that the axial electric field led to anisotropic growth (the index of uniformity increased by 0.58 ± 0.04), and the rotational electric field could achieve a three-dimensional uniform distribution (the index of uniformity increased by 42%). This study provides theoretical support for the regulation of brine behavior and the optimization of geological energy storage. Full article
(This article belongs to the Section Energy Systems)
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25 pages, 3459 KB  
Article
Phase Composition, Structure, and Microwave Absorption of Magnetron-Sputtered Co–C–Cr Multilayer Films
by Nadezhda Prokhorenkova, Almira Zhilkashinova, Madi Abilev, Leszek Łatka, Igor Ocheredko and Assel Zhilkashinova
Compounds 2025, 5(3), 27; https://doi.org/10.3390/compounds5030027 - 20 Jul 2025
Viewed by 324
Abstract
Multilayer thin films composed of cobalt (Co), carbon (C), and chromium (Cr) possess promising electromagnetic properties, yet the combined Co–C–Cr system remains underexplored, particularly regarding its performance as a microwave absorber. Existing research has primarily focused on binary Co–C or Co–Cr compositions, leaving [...] Read more.
Multilayer thin films composed of cobalt (Co), carbon (C), and chromium (Cr) possess promising electromagnetic properties, yet the combined Co–C–Cr system remains underexplored, particularly regarding its performance as a microwave absorber. Existing research has primarily focused on binary Co–C or Co–Cr compositions, leaving a critical knowledge gap in understanding how ternary multilayer architectures influence electromagnetic behavior. This study addresses this gap by investigating the structure, phase composition, and microwave absorption performance of Co–C–Cr multilayer coatings fabricated via magnetron sputtering onto porous silicon substrates. This study compares four-layer and eight-layer configurations to assess how multilayer architecture affects impedance matching, reflection coefficients, and absorption characteristics within the 8.2–12.4 GHz frequency range. Structural analyses using X-ray diffraction and transmission electron microscopy confirm the coexistence of amorphous and nanocrystalline phases, which enhance absorption through dielectric and magnetic loss mechanisms. Both experimental and simulated results show that increasing the number of layers improves impedance gradients and broadens the operational bandwidth. The eight-layer coatings demonstrate a more uniform absorption response, while four-layer structures exhibit sharper resonant minima. These findings advance the understanding of ternary multilayer systems and contribute to the development of frequency-selective surfaces and broadband microwave shielding materials. Full article
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19 pages, 1343 KB  
Article
Two-Step Plasma Electrolytic Oxidation of Advanced High-Strength Steel in Aluminate and Silicate Solutions
by Roy Morgenstern, Thomas Mehner and Thomas Lampke
Coatings 2025, 15(7), 850; https://doi.org/10.3390/coatings15070850 - 19 Jul 2025
Viewed by 400
Abstract
This work aims to clarify whether the individual advantages of the two commonly used silicate- and aluminate-based electrolytes for the plasma electrolytic oxidation (PEO) of steel can be combined in a two-step process. The first PEO step was carried out in an aluminate–phosphate [...] Read more.
This work aims to clarify whether the individual advantages of the two commonly used silicate- and aluminate-based electrolytes for the plasma electrolytic oxidation (PEO) of steel can be combined in a two-step process. The first PEO step was carried out in an aluminate–phosphate electrolyte with pulsed voltage and anodic amplitudes between 150 V and 200 V. The second PEO step was carried out at an increased anodic voltage amplitude of 400 V in a silicate–phosphate electrolyte. As a reference, PEO was conducted in a single step in the same silicate–phosphate electrolyte at an increased anodic voltage amplitude of up to 400 V. The microstructural layer analysis was carried out using SEM and EDX analyses, Raman spectroscopy and XRD analysis. Heterogeneous layers containing iron oxide and iron phosphate form in the silicate–phosphate electrolyte at anodic voltage amplitudes up to 300 V by electrochemical reactions. Further increasing the anodic voltage amplitude up to 400 V results in heterogeneous layers, too. PEO in the aluminate–phosphate electrolyte at 150 V causes the formation of thin, amorphous layers mainly consisting of aluminum and iron oxides. At 200 V amplitude, a PEO layer with pronounced open porosity is formed, which primarily consists of the crystalline phases corundum and hercynite. During subsequent PEO in the silicate–phosphate electrolyte, the previously formed layers were replaced by a macroscopically homogeneous layer that is mostly nanocrystalline and may contain amorphous iron(-aluminum) phosphates and oxides as well as silicon oxide. It can be concluded that the two-step PEO process is suitable for the production of more homogeneous PEO layers. Full article
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13 pages, 3977 KB  
Article
SiOx-Based Anode Materials with High Si Content Achieved Through Uniform Nano-Si Dispersion for Li-Ion Batteries
by Seunghyeok Jang and Jae-Hun Kim
Materials 2025, 18(14), 3272; https://doi.org/10.3390/ma18143272 - 11 Jul 2025
Viewed by 699
Abstract
Silicon alloy-based materials are widely studied as high-capacity anode materials to replace commercial graphite in lithium-ion batteries (LIBs). Among these, silicon suboxide (SiOx) offers superior cycling performance compared to pure Si-based materials. However, achieving a high initial Coulombic efficiency (ICE) remains [...] Read more.
Silicon alloy-based materials are widely studied as high-capacity anode materials to replace commercial graphite in lithium-ion batteries (LIBs). Among these, silicon suboxide (SiOx) offers superior cycling performance compared to pure Si-based materials. However, achieving a high initial Coulombic efficiency (ICE) remains a key challenge. To address this, previous studies have explored SixO composites (x ≈ 1, 2), where nano-Si is uniformly dispersed within a Si suboxide matrix to enhance ICE. While this approach improves reversible capacity and ICE compared to conventional SiO, it still falls short of the capacity achieved with pure Si. This study employs a high-energy mechanical milling approach with increased Si content to achieve higher reversible capacity and further enhance the ICE while also examining the effects of trace oxygen uniformly distributed within the Si suboxide matrix. Structural characterization via X-ray diffraction, Raman spectroscopy, and electron microscopy confirm that Si crystallites (<10 nm) are homogeneously embedded within the SiOx matrix, reducing crystalline Si size and inducing partial amorphization. Electrochemical analysis demonstrates an ICE of 89% and a reversible capacity of 2558 mAh g−1, indicating significant performance improvements. Furthermore, carbon incorporation enhances cycling stability, underscoring the material’s potential for commercial applications. Full article
(This article belongs to the Special Issue High-Performance Materials for Energy Conversion)
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