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Keywords = c-SNOM

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12 pages, 1019 KiB  
Article
Polarization Sensitivity in Scattering-Type Scanning Near-Field Optical Microscopy—Towards Nanoellipsometry
by Felix G. Kaps, Susanne C. Kehr and Lukas M. Eng
Appl. Sci. 2023, 13(18), 10429; https://doi.org/10.3390/app131810429 - 18 Sep 2023
Cited by 2 | Viewed by 1945
Abstract
Electric field enhancement mediated through sharp tips in scattering-type scanning near-field optical microscopy (s-SNOM) enables optical material analysis down to the 10-nm length scale and even below. Nevertheless, the out-of-plane electric field component is primarily considered here due to the lightning rod effect [...] Read more.
Electric field enhancement mediated through sharp tips in scattering-type scanning near-field optical microscopy (s-SNOM) enables optical material analysis down to the 10-nm length scale and even below. Nevertheless, the out-of-plane electric field component is primarily considered here due to the lightning rod effect of the elongated s-SNOM tip being orders of magnitude stronger than any in-plane field component. Nonetheless, the fundamental understanding of resonantly excited near-field coupled systems clearly allows us to take profit from all vectorial components, especially from the in-plane ones. In this paper, we theoretically and experimentally explore how the linear polarization control of both near-field illumination and detection can constructively be implemented to (non-)resonantly couple to selected sample permittivity tensor components, e.g., explicitly to the in-plane directions as well. When applying the point-dipole model, we show that resonantly excited samples respond with a strong near-field signal to all linear polarization angles. We then experimentally investigate the polarization-dependent responses for both non-resonant (Au) and phonon-resonant (3C-SiC) sample excitations at a 10.6 µm and 10.7 µm incident wavelength using a tabletop CO2 laser. Varying the illumination polarization angle thus allows one to quantitatively compare the scattered near-field signatures for the two wavelengths. Finally, we compare our experimental data to simulation results and thus gain a fundamental understanding of the polarization’s influence on the near-field interaction. As a result, the near-field components parallel and perpendicular to the sample surface can be easily disentangled and quantified through their polarization signatures, connecting them directly to the sample’s local permittivity. Full article
(This article belongs to the Special Issue Recent Advances and Future Trends in Nanophotonics Ⅱ)
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8 pages, 1376 KiB  
Article
Near-Field IR Orientational Spectroscopy of Silk
by Meguya Ryu, Reo Honda, Aina Reich, Adrian Cernescu, Jing-Liang Li, Jingwen Hu, Saulius Juodkazis and Junko Morikawa
Appl. Sci. 2019, 9(19), 3991; https://doi.org/10.3390/app9193991 - 24 Sep 2019
Cited by 11 | Viewed by 3797
Abstract
Orientational dependence of the IR absorbing amide bands of silk is demonstrated from two orthogonal longitudinal and transverse microtome slices with a thickness of only ∼100 nm. Scanning near-field optical microscopy (SNOM) which preferentially probes orientation perpendicular to the sample’s surface was used. [...] Read more.
Orientational dependence of the IR absorbing amide bands of silk is demonstrated from two orthogonal longitudinal and transverse microtome slices with a thickness of only ∼100 nm. Scanning near-field optical microscopy (SNOM) which preferentially probes orientation perpendicular to the sample’s surface was used. Spatial resolution of the silk–epoxy boundary was ∼100 nm resolution, while the spectra were collected by a ∼10 nm tip. Ratio of the absorbance of the amide-II C-N at 1512 cm 1 and amide-I C=O β -sheets at 1628 cm 1 showed sensitivity of SNOM to the molecular orientation. SNOM characterisation is complimentary to the far-field absorbance which is sensitive to the in-plane polarisation. Volumes with cross sections smaller than 100 nm can be characterised for molecular orientation. A method of absorbance measurements at four angles of the slice cut orientation, which is equivalent to the four polarisation angles absorbance measurement, is proposed. Full article
(This article belongs to the Section Nanotechnology and Applied Nanosciences)
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25 pages, 9624 KiB  
Review
A Review of Three-Dimensional Scanning Near-Field Optical Microscopy (3D-SNOM) and Its Applications in Nanoscale Light Management
by Paul Bazylewski, Sabastine Ezugwu and Giovanni Fanchini
Appl. Sci. 2017, 7(10), 973; https://doi.org/10.3390/app7100973 - 22 Sep 2017
Cited by 97 | Viewed by 16898
Abstract
In this article, we present an overview of aperture and apertureless type scanning near-field optical microscopy (SNOM) techniques that have been developed, with a focus on three-dimensional (3D) SNOM methods. 3D SNOM has been undertaken to image the local distribution (within ~100 nm [...] Read more.
In this article, we present an overview of aperture and apertureless type scanning near-field optical microscopy (SNOM) techniques that have been developed, with a focus on three-dimensional (3D) SNOM methods. 3D SNOM has been undertaken to image the local distribution (within ~100 nm of the surface) of the electromagnetic radiation scattered by random and deterministic arrays of metal nanostructures or photonic crystal waveguides. Individual metal nanoparticles and metal nanoparticle arrays exhibit unique effects under light illumination, including plasmon resonance and waveguiding properties, which can be directly investigated using 3D-SNOM. In the second part of this article, we will review a few applications in which 3D-SNOM has proven to be useful for designing and understanding specific nano-optoelectronic structures. Examples include the analysis of the nano-optical response phonetic crystal waveguides, aperture antennae and metal nanoparticle arrays, as well as the design of plasmonic solar cells incorporating random arrays of copper nanoparticles as an optical absorption enhancement layer, and the use of 3D-SNOM to probe multiple components of the electric and magnetic near-fields without requiring specially designed probe tips. A common denominator of these examples is the added value provided by 3D-SNOM in predicting the properties-performance relationship of nanostructured systems. Full article
(This article belongs to the Special Issue Light Management for Optoelectronics)
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