Search Results (6)

This study investigates the thermal pinning and depinning behaviors of vortex domain walls (VWs) in constricted magnetic nanowires, focusing on the influence of intrinsic magnetic properties on VW stability under thermal stress. Using micromagnetic simulations, we analyze the roles of saturation magnetization (Ms), uniaxial magnetic anisotropy (Ku), and nanowire geometry in determining VW thermal stability. The modeled nanowire has dimensions of 200 nm (width), 30 nm (thickness), and a 50 nm constriction length, chosen based on the dependence of VW formation on nanowire geometry. Our results show that increasing Ms and K_u enhances VW pinning, while thermal fluctuations at higher temperatures promote VW depinning. We demonstrate that temperature and magnetic parameters significantly impact VW structural stability, offering insights for designing high-reliability nanowire-based memory devices. These findings contribute to optimizing nanowire designs for thermally stable, energy-efficient spintronic memory systems. Full article

This study investigates the effect of quantum size and an external magnetic field on the optoelectronic properties of a cylindrical Al${}_x$Ga${}_{1-x}$As/GaAs-based core/shell nanowire. We used the one-band effective mass model to describe the Hamiltonian of an interacting electron-donor impurity system and employed two numerical methods to calculate the ground state energies: the variational and finite element methods. With the finite confinement barrier at the interface between the core and the shell, the cylindrical symmetry of the system revealed proper transcendental equations, leading to the concept of the threshold core radius. Our results show that the optoelectronic properties of the structure strongly depend on core/shell sizes and the strength of the external magnetic field. We found that the maximum probability of finding the electron occurs in either the core or the shell region, depending on the value of the threshold core radius. This threshold radius separates two regions where physical behaviors undergo changes and the applied magnetic field acts as an additional confinement. Full article

Low-dimensional nanostructures have many advantages when used in sensors compared to the traditional bulk materials, in particular in their sensitivity and specificity. In such nanostructures, the motion of carriers can be confined from one, two, or all three spatial dimensions, leading to their unique properties. New advancements in nanosensors, based on low-dimensional nanostructures, permit their functioning at scales comparable with biological processes and natural systems, allowing their efficient functionalization with chemical and biological molecules. In this article, we provide details of such sensors, focusing on their several important classes, as well as the issues of their designs based on mathematical and computational models covering a range of scales. Such multiscale models require state-of-the-art techniques for their solutions, and we provide an overview of the associated numerical methodologies and approaches in this context. We emphasize the importance of accounting for coupling between different physical fields such as thermal, electromechanical, and magnetic, as well as of additional nonlinear and nonlocal effects which can be salient features of new applications and sensor designs. Our special attention is given to nanowires and nanotubes which are well suited for nanosensor designs and applications, being able to carry a double functionality, as transducers and the media to transmit the signal. One of the key properties of these nanostructures is an enhancement in sensitivity resulting from their high surface-to-volume ratio, which leads to their geometry-dependant properties. This dependency requires careful consideration at the modelling stage, and we provide further details on this issue. Another important class of sensors analyzed here is pertinent to sensor and actuator technologies based on smart materials. The modelling of such materials in their dynamics-enabled applications represents a significant challenge as we have to deal with strongly nonlinear coupled problems, accounting for dynamic interactions between different physical fields and microstructure evolution. Among other classes, important in novel sensor applications, we have given our special attention to heterostructures and nucleic acid based nanostructures. In terms of the application areas, we have focused on chemical and biomedical fields, as well as on green energy and environmentally-friendly technologies where the efficient designs and opportune deployments of sensors are both urgent and compelling. Full article

Cylindrical magnetic nanowires show great potential for 3D applications such as magnetic recording, shift registers, and logic gates, as well as in sensing architectures or biomedicine. Their cylindrical geometry leads to interesting properties of the local domain structure, leading to multifunctional responses to magnetic fields and electric currents, mechanical stresses, or thermal gradients. This review article is summarizing the work carried out in our group on the fabrication and magnetic characterization of cylindrical magnetic nanowires with modulated geometry and anisotropy. The nanowires are prepared by electrochemical methods allowing the fabrication of magnetic nanowires with precise control over geometry, morphology, and composition. Different routes to control the magnetization configuration and its dynamics through the geometry and magnetocrystalline anisotropy are presented. The diameter modulations change the typical single domain state present in cubic nanowires, providing the possibility to confine or pin circular domains or domain walls in each segment. The control and stabilization of domains and domain walls in cylindrical wires have been achieved in multisegmented structures by alternating magnetic segments of different magnetic properties (producing alternative anisotropy) or with non-magnetic layers. The results point out the relevance of the geometry and magnetocrystalline anisotropy to promote the occurrence of stable magnetochiral structures and provide further information for the design of cylindrical nanowires for multiple applications. Full article

Highly ordered ferromagnetic metal nanowire arrays with preferred growth direction show potential applications in electronic and spintronic devices. In this work, by employing a porous anodic aluminum oxide template-assisted electrodeposition method, we successfully prepared Ni nanowire arrays. Importantly, the growth direction of Ni nanowire arrays can be controlled by varying the current densities. The crystalline and growth orientation of Ni nanowire arrays show effects on magnetic properties. Single-crystallinity Ni nanowires with [110] orientation show the best magnetic properties, including coercivity and squareness, along the parallel direction of the nanowire axis. The current preparation strategy can be used to obtain other nanowire arrays (such as metal, alloy, and semiconductor) with controlled growth direction in confined space, and is therefore of broad interest for different applications. Full article

Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs’ promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology. Full article