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Search Results (5)

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Keywords = dinaphtho-thieno-thiophene (DNTT)

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16 pages, 440 KB  
Article
Trap Polarity and the p/n Asymmetry in Oxidised DNTT: A Frontier-Shift Rule
by Matej Matuš, Tomáš Vincze, Michal Hanic, Lubica Stuchlikova and Martin Weis
Materials 2026, 19(15), 3333; https://doi.org/10.3390/ma19153333 - 5 Aug 2026
Viewed by 235
Abstract
Organic thin-film transistors based on dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) are attractive for low-cost, large-area electronics, but in unencapsulated devices, atmospheric oxidation generates charge traps whose electronic character—which product traps holes and which traps electrons—has not been mapped systematically. Here, [...] Read more.
Organic thin-film transistors based on dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) are attractive for low-cost, large-area electronics, but in unencapsulated devices, atmospheric oxidation generates charge traps whose electronic character—which product traps holes and which traps electrons—has not been mapped systematically. Here, 39 oxygen- and hydroxyl-related defect identities of DNTT are screened with the semi-empirical GFN2-xTB method, complemented by an a priori frontier reactivity index, and classified by the sign of the frontier-level shift. This sign obeys a simple rule: a net π-donating hydroxyl raises the HOMO and yields a hole trap, whereas a net π-accepting carbonyl or quinone lowers the frontier levels and yields a deep electron trap. Hybrid density-functional theory (B3LYP/def2-TZVP) confirms the sign rule and the ordering of the shifts across all closed-shell defect classes. The rule provides a compact, defect-level rationalisation of the well-known asymmetry whereby p-type acenes tolerate air far better than n-type ones. Finally, a hole trap of about 0.255 eV, measured by deep-level transient Fourier spectroscopy, is shown to be consistent with a hydroxyl-related origin, without claiming a unique microscopic assignment. Full article
(This article belongs to the Special Issue Electronic Structure of Novel Semiconducting Materials)
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16 pages, 4542 KB  
Article
Studies of Raman-Scattered Technology on S-Shaped Dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophene-10 (S-DNTT-10)
by Haobing Wang, Olivier Simonetti, Oumaima Et-Thakafy, Nicolas Bercu, Florence Etienne, Sylvain Potiron, Pierre-Michel Adam and Louis Giraudet
Materials 2025, 18(10), 2389; https://doi.org/10.3390/ma18102389 - 20 May 2025
Cited by 1 | Viewed by 1426
Abstract
S-shaped dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophene (S-DNTT) molecules have shown promise for applications in organic electronic devices, though their molecular characteristics are not fully understood yet. In this study, we first revealed the material characteristics of S-DNTT-10 by vibrational dynamics using Raman spectroscopy and density functional theory [...] Read more.
S-shaped dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophene (S-DNTT) molecules have shown promise for applications in organic electronic devices, though their molecular characteristics are not fully understood yet. In this study, we first revealed the material characteristics of S-DNTT-10 by vibrational dynamics using Raman spectroscopy and density functional theory (DFT) simulations, employing the B3LYP functional method and the 6-311G (d, p) basis set. The molecular vibrations identified included C–H bending in alkyl chains and the deformation of S-shaped thiophene rings. In addition, surface-enhanced Raman scattering (SERS) with 785 nm incident light was applied to thermally deposited 25 nm S-DNTT-10 thin films with gold (Au) nanostructures. It showed enhanced Raman signals from the lower S-DNTT-10 layers. The findings significantly contribute to the knowledge of S-DNTT-10 molecular properties and also contribute insights into using this material into organic electronic devices in the future. Full article
(This article belongs to the Section Advanced Materials Characterization)
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12 pages, 3010 KB  
Article
Dynamic Photoresponse of a DNTT Organic Phototransistor
by Marcello Campajola, Paolo Di Meo, Francesco Di Capua, Paolo Branchini and Alberto Aloisio
Sensors 2023, 23(5), 2386; https://doi.org/10.3390/s23052386 - 21 Feb 2023
Cited by 6 | Viewed by 3707
Abstract
The photosensitivity, responsivity, and signal-to-noise ratio of organic phototransistors depend on the timing characteristics of light pulses. However, in the literature, such figures of merit (FoM) are typically extracted in stationary conditions, very often from IV curves taken under constant light exposure. In [...] Read more.
The photosensitivity, responsivity, and signal-to-noise ratio of organic phototransistors depend on the timing characteristics of light pulses. However, in the literature, such figures of merit (FoM) are typically extracted in stationary conditions, very often from IV curves taken under constant light exposure. In this work, we studied the most relevant FoM of a DNTT-based organic phototransistor as a function of the timing parameters of light pulses, to assess the device suitability for real-time applications. The dynamic response to light pulse bursts at ~470 nm (close to the DNTT absorption peak) was characterized at different irradiances under various working conditions, such as pulse width and duty cycle. Several bias voltages were explored to allow for a trade-off to be made between operating points. Amplitude distortion in response to light pulse bursts was also addressed. Full article
(This article belongs to the Special Issue Photoelectric Measurement and Sensing: New Technology and Applications)
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7 pages, 874 KB  
Letter
Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors
by Damien Thuau, Katherine Begley, Rishat Dilmurat, Abduleziz Ablat, Guillaume Wantz, Cédric Ayela and Mamatimin Abbas
Materials 2020, 13(7), 1583; https://doi.org/10.3390/ma13071583 - 30 Mar 2020
Cited by 10 | Viewed by 3973
Abstract
Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 [...] Read more.
Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed. Full article
(This article belongs to the Special Issue Organic Transistors: Current Status and Opportunities)
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10 pages, 2658 KB  
Article
Raman Spectroscopic Studies of Dinaphthothienothiophene (DNTT)
by Bishwajeet Singh Bhardwaj, Takeshi Sugiyama, Naoko Namba, Takayuki Umakoshi, Takafumi Uemura, Tsuyoshi Sekitani and Prabhat Verma
Materials 2019, 12(4), 615; https://doi.org/10.3390/ma12040615 - 18 Feb 2019
Cited by 15 | Viewed by 5608
Abstract
The application of dinaphthothienothiophene (DNTT) molecules, a novel organic semiconductor material, has recently increased due to its high charge carrier mobility and thermal stability. Since the structural properties of DNTT molecules, such as the molecular density distribution and molecular orientations, significantly affect their [...] Read more.
The application of dinaphthothienothiophene (DNTT) molecules, a novel organic semiconductor material, has recently increased due to its high charge carrier mobility and thermal stability. Since the structural properties of DNTT molecules, such as the molecular density distribution and molecular orientations, significantly affect their charge carrier mobility in organic field-effect transistors devices, investigating these properties would be important. Here, we report Raman spectroscopic studies on DNTT in a transistor device, which was further analyzed by the density functional theory. We also show a perspective of this technique for orientation analysis of DNTT molecules within a transistor device. Full article
(This article belongs to the Section Optical and Photonic Materials)
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