9,028 Results Found

An effective in situ H₂/N₂ pretreatment technique for enhancement-mode GaN MISFET with a PEALD AlN/LPCVD SiN_x Dual Gate Dielectric is presented. This technique features in situ H₂ (15%)/N₂ (85%) plasma pretreatment prior to AlN deposition. By using i...

An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (di/dt) and voltage spikes (dv/dt) in the parasitic inductor of its circuit, resulting in damage to t...

An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF₄ plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-g...

β−Ga₂O₃ field−effect transistors (FETs) were fabricated with and without local thinning to change the threshold voltage. A 220 nm Ga₂O₃ layer was mechanically exfoliated from a Cr−doped gallium oxide single crystal. Approximate...

In this work, a novel enhancement-mode GaN p-MISFET with a buried back gate (BBG) is proposed to improve the gate-to-channel modulation capability of a high drain current. By using the p-GaN/AlN/AlGaN/AlN double heterostructure, the buried 2DEG chann...

The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-...

AlGaN-based high-electron-mobility transistors are critical for next-generation power electronics and radio-frequency applications, yet achieving stable enhancement-mode operation with a high threshold voltage remains a key challenge. In this work, w...

We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulato...

Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl₂/BCl₃/SF₆-mixed gas plasma. This etching technique feat...

We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga₂O₃)-based deep ultraviolet (DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold voltage (V_T) switches between negative and positive depending on the &b...

The vertical heterojunction Ga₂O₃ MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the p-type oxide as the current-blocking layer (CBL) is investigated for the first time using SILVACO simulation software. The results show that the thr...

This work outperforms the previous literatures by proposing a delay-cell-controlled voltage control oscillator (VCO) design for common unipolar, single-gate, and enhancement-mode thin-film transistor (TFT) technologies. A design example with InZnO TF...

This study introduces an enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a self-aligned p-GaN gate structure, fabricated using a gate-first process. The key innovation of this work lies...

The detection of flaw echoes in backscattered signals in ultrasonic nondestructive testing can be challenging due to the existence of backscattering noise and electronic noise. In this article, an empirical mode decomposition (EMD) methodology is pro...

Excitation and emission enhancement by using the plasmon mode formed on a plasmonic chip was studied with a microscope and micro-spectroscope. Surface plasmon resonance wavelengths were observed on one-dimensional (1D) and two-dimensional (2D) plasmo...

The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts...

A dual Al₂O₃ MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in...

In this work, a low-power plasma oxidation surface treatment followed by Al₂O₃ gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility t...

The coupling between the quantum dots (QDs) and silicon-based microdisk resonator facilitates enhancing the light–matter interaction for the novel silicon-based light source. However, the typical circular microdisks embedded with Ge QDs still h...

The dynamic mode decomposition serves as a useful tool for the coherent structure extraction of the complex flow fields with characteristic frequency identification, but the phase information of the flow modes is paid less attention to. In this study...

This paper presents a non-return-to-zero (NRZ)/4-level pulse amplitude modulation (PAM-4) dual-mode wireline transmitter with an eye-opening enhancement technique to improve horizontal eye-opening. With the eye-enhancement pulse generator and the aux...

In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a...

Magnetic anapole states associated with the destructive interference between magnetic dipole and magnetic toroidal moments result in suppressed scattering accompanied by strongly enhanced near fields. Here, we demonstrate the existence of such modes...

Model Predictive Control (MPC) is widely employed in three-phase two-level voltage source inverters (2L-VSIs) due to its fast dynamic response and straightforward implementation. However, conventional MPC requires the evaluation of all eight candidat...

In this paper, a novel enhancement-mode β-Ga₂O₃-based FinFET structure with a gate formed by the NiO/β-Ga₂O₃ heterojunction named HJ-FinFET has been proposed, and the excellent performance of the device has also been demonstrated. The prima...

In bearing fault diagnosis, ensemble empirical mode decomposition (EEMD) is a reliable technique for treating rolling bearing vibration signals by dividing them into intrinsic mode functions (IMFs). Traditional methods used in EEMD consist of identif...

Wind turbines operate under harsh conditions, heightening the risk of rotating bearing failures. While fault diagnosis using acoustic or vibration signals is feasible, single-modal methods are highly vulnerable to environmental noise and system uncer...

Forming of hybrid bulk metal components might include severe membrane mode deformation of the joining zone. This effect is not reflected by common Traction Separation Laws used within Cohesive Zone Elements that are usually applied for the simulation...

In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (V_GS) bias stress. Device transfer and transconductance, output, a...

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections....

In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (V_TH) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effe...

Alimentary lymphoma (AL) is the most common malignancy of the feline gastrointestinal tract and may cause variable mild to severe alteration of the gastric wall on ultrasonography (US) that can be very similar to those caused by inflammation (INF). T...

In this study, we conducted an optimization of a low-damage selective etching process utilizing inductively coupled plasma-reactive ion etch (ICP-RIE) with a fluorine-based gas mixture. This optimization was carried out for the fabrication of p-GaN g...

A textile bandwidth-enhanced coupled-mode substrate-integrated cavity antenna with a slot is presented. The original coupled-mode substrate-integrated cavity antenna is of two close resonances for the odd and even coupled modes, and a rectangular slo...

Due to nonlinear aerodynamics, “non-traditional” flight modes may appear in longitudinal and lateral/directional dynamics once an aircraft experiences a high angle of attack and rapid maneuvers. Signal decomposition techniques are require...

Contrast-enhanced ultrasonography (CEUS) is considered a promising technique for differentiation of benign and malignant tumors in humans. However, few studies have assessed superficial neoplasms in dogs by means of CEUS. The aim of this study was to...

A textile bandwidth-enhanced half-mode substrate-integrated cavity (HMSIC) antenna based on embroidered shorting vias is designed. Based on the simulated results of the basic HMSIC antenna, two embroidered hollow posts with square cross-sections are...

Space-division multiplexing over few-mode fibers is a promising solution to increase the capacity of the future generation of optical transmission systems. Mode-dependent loss (MDL) is known to have a detrimental impact on the capacity of few-mode fi...

Canine gastric disorders are common in veterinary clinical practice and among these neoplasms require rapid identification and characterization. Standard ultrasound (US) is the imaging modality of choice for gastric wall assessment. The aim of this p...

High refractive index dielectric nanostructures represent a new frontier in nanophotonics, and the unique semiconductor characteristics of dielectric systems make it possible to enhance electric fields by exploiting this fundamental physical phenomen...

This work introduces a novel architecture for increasing the sensitivity of bulk mode gyroscopes. It is based on adding parallel plate comb drives to the points of maximum vibration amplitude, and tuning the stiffness of the combs. This increases the...

We designed and fabricated guided-mode resonance (GMR) gratings on indium-tin-oxide (ITO) thin film to generate a significantly enhanced local electric field for surface-enhanced Raman scattering (SERS) spectroscopy. Ag nanoparticles (NPs) were self...

The equalization enhanced phase noise (EEPN), caused by the interaction of the chromatic dispersion (CD) with the phase noise of the local oscillator (LO), has been extensively studied for single-mode optical communication systems. Few-mode fiber (FM...

Efficient scheduling in industrial prefabrication environments—such as Prefabricated Bathroom Unit (PBU) production—faces increasing challenges due to resource limitations, overlapping projects, and complex task dependencies. To address t...

A textile bandwidth-enhanced polarization-reconfigurable half-mode substrate-integrated cavity antenna was designed for wearable applications. A slot was cut out from the patch of a basic textile HMSIC antenna to excite two close resonances to form a...

Due to the complexity and variability of underwater acoustic channels, ship-radiated noise (SRN) detected using the passive sonar is prone to be distorted. The entropy-based feature extraction method can improve this situation, to some extent. Howeve...

This paper presents a dual-mode clock-enhanced N-path notch filter that offers high linearity. In Mode 1, the clock swing boost mode, the boost module extends the clock swing from V_DD to 2 × V_DD, thereby significantly improving the filter&rsquo...

Anisotropic noble metal nanoparticles supporting more than one localized surface plasmon resonance can be tailored for efficient dual-mode fluorescence enhancement by ensuring an adequate coupling to both absorption and emission bands of fluorophores...

Seismic attributes are widely used to enhance the interpretation of structural, stratigraphic, and lithologic features in subsurface data. Their effectiveness, however, can be limited by noise, resolution constraints, and processing artifacts. This s...

Papillary thyroid carcinoma (PTC) is the most common pathological type of thyroid cancer. PTC patients with extrathyroidal extension (ETE) are associated with poor prognoses. The preoperative accurate prediction of ETE is crucial for helping the surg...