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10 pages, 2472 KB

Open AccessEditor’s ChoiceArticle

High-Mobility All-Transparent TFTs with Dual-Functional Amorphous IZTO for Channel and Transparent Conductive Electrodes

by Min-Woo Park, Sohyeon Kim, Su-Yeon Son, Si-Won Kim, Tae-Kyun Moon, Pei-Chen Su and Kyoung-Kook Kim

Materials 2025, 18(2), 216; https://doi.org/10.3390/ma18020216 - 7 Jan 2025

Cited by 1 | Viewed by 1503

Abstract

The increasing demand for advanced transparent and flexible display technologies has led to significant research in thin-film transistors (TFTs) with high mobility, transparency, and mechanical robustness. In this study, we fabricated all-transparent TFTs (AT-TFTs) utilizing amorphous indium-zinc-tin-oxide (a-IZTO) as a dual-functional material for both the channel layer and transparent conductive electrodes (TCEs). The a-IZTO was deposited using radio-frequency magnetron sputtering, with its composition adjusted for both channel and electrode functionality. XRD analysis confirmed the amorphous nature of the a-IZTO layers, ensuring structural stability post-thermal annealing. The a-IZTO TCEs demonstrated high optical transparency (89.57% in the visible range) and excellent flexibility, maintaining a low sheet resistance with minimal degradation even after 100,000 bending cycles. The fabricated AT-TFTs exhibit superior field-effect mobility (30.12 cm²/V·s), an on/off current ratio exceeding 10⁸, and a subthreshold swing of 0.36 V/dec. The AT-TFT device demonstrated a minimum transmittance of 75.46% in the visible light range, confirming its suitability for next-generation flexible and transparent displays. Full article

(This article belongs to the Section Advanced Nanomaterials and Nanotechnology)

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11 pages, 5567 KB

Open AccessArticle

Ultra-Flexible Organic Solar Cell Based on Indium-Zinc-Tin Oxide Transparent Electrode for Power Source of Wearable Devices

by Jun Young Choi, In Pyo Park and Soo Won Heo

Nanomaterials 2021, 11(10), 2633; https://doi.org/10.3390/nano11102633 - 7 Oct 2021

Cited by 10 | Viewed by 3451

Abstract

We have developed a novel structure of ultra-flexible organic photovoltaics (UFOPVs) for application as a power source for wearable devices with excellent biocompatibility and flexibility. Parylene was applied as an ultra-flexible substrate through chemical vapor deposition. Indium-zinc-tin oxide (IZTO) thin film was used as a transparent electrode. The sputtering target composed of 70 at.% In₂O₃-15 at.% ZnO-15 at.% SnO₂ was used. It was fabricated at room temperature, using pulsed DC magnetron sputtering, with an amorphous structure. UFOPVs, in which a 1D grating pattern was introduced into the hole-transport and photoactive layers were fabricated, showed a 13.6% improvement (maximum power conversion efficiency (PCE): 8.35%) compared to the reference device, thereby minimizing reliance on the incident angle of the light. In addition, after 1000 compression/relaxation tests with a compression strain of 33%, the PCE of the UFOPVs maintained a maximum of 93.3% of their initial value. Full article

(This article belongs to the Special Issue Advances in Nanomaterials for Photovoltaic Applications)

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13 pages, 3987 KB

Open AccessArticle

Low-Temperature Deposition of Transparent Conducting Films Applied to Flexible Electrochromic Devices

by Ke-Ding Li, Po-Wen Chen and Kao-Shuo Chang

Materials 2021, 14(17), 4959; https://doi.org/10.3390/ma14174959 - 31 Aug 2021

Cited by 8 | Viewed by 2995

Abstract

Here, we compare two different transparent conducting oxides (TCOs), namely indium tin oxide (ITO) and indium zinc tin oxide (IZTO), fabricated as transparent conducting films using processes that require different temperatures. ITO and IZTO films were prepared at 230 °C and at room temperature, respectively, on glass and polyethylene terephthalate (PET) substrates using reactive magnetron sputtering. Electrochromic WO₃ films deposited on ITO-based and IZTO-based ECDs using vacuum cathodic arc plasma (CAP) were investigated. IZTO-based ECDs have higher optical transmittance modulation, ΔT = 63% [from T_bleaching (90.01%) to T_coloration (28.51%)], than ITO-based ECDs, ΔT = 59%. ECDs consisted of a working electrochromic electrode (WO₃/IZTO/PET) and a counter-electrode (Pt mesh) in a 0.2 M LiClO₄/perchlorate (LiClO₄/PC) liquid electrolyte solution with an active area of 3 cm × 4 cm a calculated bleaching time t_c of 21.01 s and a coloration time t_b of 4.7 s with varying potential from −1.3 V (coloration potential, V_c) to 0.3 V (bleaching potential, V_b). Full article

(This article belongs to the Section Thin Films and Interfaces)

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10 pages, 4392 KB

Open AccessArticle

New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays

by Ching-Lin Fan, Hou-Yen Tsao, Chun-Yuan Chen, Pei-Chieh Chou and Wei-Yu Lin

Coatings 2020, 10(10), 1004; https://doi.org/10.3390/coatings10101004 - 20 Oct 2020

Cited by 14 | Viewed by 5393

Abstract

In recent years, active-matrix organic light-emitting diodes (AMOLEDs) has been the most popular display for portable application. To satisfy the requirement for the application of the portable display, the design of the compensating pixel circuit with the low-voltage driving and low-power consumption will be requested. In addition to the circuit with the design of the low-voltage driving, high-mobility thin-film transistors as driving device will be also necessary in order to supply larger driving current at low-voltage driving. Therefore, the study presents a new low-voltage driving AMOLED pixel circuit with high-mobility amorphous indium–zinc–tin–oxide (a-IZTO) thin-film transistors (TFTs) as driving device for portable displays with high resolution. The proposed pixel circuit can simultaneously compensate for the threshold voltage variation of driving TFT (ΔV_{TH_TFT}), OLED degradation (ΔV_{TH_OLED}), and the I-R drop of a power line (ΔV_DD). By using AIM-Spice for simulation based on fabricated a-IZTO TFTs with mobility of 70 cm²V⁻¹S⁻¹ as driving devices, we discovered that the error rates of the driving current were all lower than 5.71% for all input data when ΔV_{TH_TFT} = ±1 V, ΔV_DD = 0.5 V, and ΔV_{TH_OLED} = 0.5 V were all considered simultaneously. We revealed that the proposed 5T2C pixel circuit containing a high-mobility a-IZTO TFT as a driving device was suitable for high-resolution portable displays. Full article

(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)

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11 pages, 8417 KB

Open AccessArticle

Indium-Zinc-Tin-Oxide Film Prepared by Reactive Magnetron Sputtering for Electrochromic Applications

by Ke-Ding Li, Po-Wen Chen, Kao-Shuo Chang, Sheng-Chuan Hsu and Der-Jun Jan

Materials 2018, 11(11), 2221; https://doi.org/10.3390/ma11112221 - 8 Nov 2018

Cited by 12 | Viewed by 4587

Abstract

This paper reports on the fabrication of indium-zinc-tin-oxide (IZTO) transparent conductive film deposited by direct current (DC) reactive magnetron sputtering. The electrical, structural, and optical properties of IZTO film were investigated by Hall measurement, X-ray diffraction (XRD), and optical transmission spectroscopy with various sputtering powers. The IZTO film prepared used power at 100 W showed the lowest resistivity of 5.2 × 10⁻⁴ Ω cm. To accomplish rapid switching and high optical modulation, we have fabricated an electrochromic device (ECD) consisting of an working electrode (WO₃ electrode film deposited on IZTO/ITO/glass) and a counter-electrode (Pt mesh) in 0.2 M LiClO₄/PC liquid solution. The device demonstrated an optical contrast of 44% and switching times of 4.6 s and 8.1 s for the coloring and bleaching state, respectively, at the wavelength of 550 nm. Full article

(This article belongs to the Special Issue Transparent Conductive Films and Their Applications)

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8 pages, 2256 KB

Open AccessArticle

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

by Imas Noviyana, Annisa Dwi Lestari, Maryane Putri, Mi-Sook Won, Jong-Seong Bae, Young-Woo Heo and Hee Young Lee

Materials 2017, 10(7), 702; https://doi.org/10.3390/ma10070702 - 26 Jun 2017

Cited by 36 | Viewed by 6565

Abstract

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C. Full article

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