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Keywords = liquid fluorocarbon precursor

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13 pages, 6183 KB  
Article
Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas
by Chulhee Cho, Kwangho You, Sijun Kim, Youngseok Lee, Jangjae Lee and Shinjae You
Materials 2021, 14(17), 5036; https://doi.org/10.3390/ma14175036 - 3 Sep 2021
Cited by 37 | Viewed by 7392
Abstract
Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain [...] Read more.
Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO2 etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of SiO2 etching and for basic processing databases including plasma diagnosis for advanced plasma processing simulators. Full article
(This article belongs to the Section Manufacturing Processes and Systems)
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