Search Results (7)

The inspection of encapsulated MEMS devices typically relies on destructive methods which compromise the structural integrity of samples. In this work, we present the concept and preliminary experimental validation of a laser scanning setup to non-destructively inspect silicon-encapsulated microstructures by measuring small variations of transmitted light intensity in the near-infrared spectrum. This method does not require any particular sample preparation or damage, and it is based on the higher degree of transparency of silicon in the near-infrared and the transmission contrast resulting from the Fresnel reflections observed at the interfaces between the different materials of the MEMS device layers. We characterise the small feature resolving performance of the laser scanning setup using standard targets, and experimentally demonstrate the inspection of a MEMS latching device enclosed within silicon covers, comparing the contrast measurements with theoretical predictions. Full article

In the field of non-silicon MEMSs (micro-electro-mechanical systems), nickel, with its mature preparation method, good compatibility with non-silicon MEMS processes, and excellent mechanical properties, is one of the commonly used structural materials. By effectively combining it with non-silicon MEMS processes, nickel is widely used in typical process systems such as LIGA (Lithography, Galvanoformung, Abformung)/UV-LIGA (Ultraviolet Lithography, Galvanoformung, Abformung). However, with the rapid development of the non-silicon MEMS field, pure nickel materials are no longer able to meet current material demands. Alternatively, nickel–cobalt composite materials have excellent mechanical properties, thermal stability, corrosion resistance, and good adaptability to processing technology because cobalt has unique advantages as a reinforcing phase, including excellent wear resistance, corrosion resistance, and high hardness. This article examines the current methods for preparing nickel–cobalt alloys by focusing on composite electrodeposition of coatings and analyzing their advantages and disadvantages. Based on this, the effect of the composite electrodeposition conditions on the formation mechanism of nickel–cobalt alloy coatings is discussed. Then, the research status of composite electrodeposition methods mainly based on nickel–cobalt nanocomposites is discussed. Finally, a new direction for future work on nickel–cobalt composite materials mainly composed of nickel–cobalt nanomaterials prepared by composite electrodeposition is proposed, and its application prospects in non-silicon MEMS fields are discussed. Full article

Polyvinyl Alcohol (PVA) is a promising polymer due to its high solubility with water, availability in low molecular weight, having short polymer chain, and cost-effectiveness in processing. Printed technology is gaining popularity to utilize processible solution materials at low/room temperature. This work demonstrates the synthesis of PVA solution for 2.5% w/w, 4.5% w/w, 6.5% w/w, 8.5% w/w and 10.5% w/w aqueous solution was formulated. Then the properties of the ink, such as viscosity, contact angle, surface tension, and printability by inkjet and aerosol jet printing, were investigated. The wettability of the ink was investigated on flexible (Kapton) and non-flexible (Silicon) substrates. Both were identified as suitable substrates for all concentrations of PVA. Additionally, we have shown aerosol jet printing (AJP) and inkjet printing (IJP) can produce multi-layer PVA structures. Finally, we have demonstrated the use of PVA as sacrificial material for micro-electro-mechanical-system (MEMS) device fabrication. The dielectric constant of printed PVA is 168 at 100 kHz, which shows an excellent candidate material for printed or traditional transistor fabrication. Full article

This paper presents microfabrication process-driven design of a multi-degree of freedom (multi-DoF) non-resonant electrostatic microelectromechanical systems (MEMS) gyroscope by considering the design constraints of commercially available low-cost and widely-used silicon-on-insulator multi-user MEMS processes (SOIMUMPs), with silicon as a structural material. The proposed design consists of a 3-DoF drive mode oscillator with the concept of addition of a collider mass which transmits energy from the drive mass to the passive sense mass. In the sense direction, 2-DoF sense mode oscillator is used to achieve dynamically-amplified displacement in the sense mass. A detailed analytical model for the dynamic response of MEMS gyroscope is presented and performance characteristics are validated through finite element method (FEM)-based simulations. The effect of operating air pressure and temperature variations on the air damping and resulting dynamic response is analyzed. The thermal stability of the design and corresponding effect on the mechanical and capacitive sensitivity, for an operating temperature range of −40 °C to 100 °C, is presented. The results showed that the proposed design is thermally stable, robust to environmental variations, and process tolerances with a wide operational bandwidth and high sensitivity. Moreover, a system-level model of the proposed gyroscope and its integration with the sensor electronics is presented to estimate the voltage sensitivity under the constraints of the readout electronic circuit. Full article

This study describes the fabrication of an ammonia gas sensor (AGS) using a complementary metal oxide semiconductor (CMOS)–microelectromechanical system (MEMS) technique. The structure of the AGS features interdigitated electrodes (IDEs) and a sensing material on a silicon substrate. The IDEs are the stacked aluminum layers that are made using the CMOS process. The sensing material; polypyrrole/reduced graphene oxide (PPy/RGO), is synthesized using the oxidation–reduction method; and the material is characterized using an electron spectroscope for chemical analysis (ESCA), a scanning electron microscope (SEM), and high-resolution X-ray diffraction (XRD). After the CMOS process; the AGS needs post-processing to etch an oxide layer and to deposit the sensing material. The resistance of the AGS changes when it is exposed to ammonia. A non-inverting amplifier circuit converts the resistance of the AGS into a voltage signal. The AGS operates at room temperature. Experiments show that the AGS response is 4.5% at a concentration of 1 ppm NH₃; and it exhibits good repeatability. The lowest concentration that the AGS can detect is 0.1 ppm NH₃ Full article

This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than −0.01% F.S/°C in the range of −40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S. Full article

This paper develops the technologies of mechanical characterization of CMOS-MEMS devices, and presents a robust algorithm for extracting mechanical properties, such as Young’s modulus, and mean stress, through the external electrical circuit behavior of the micro test-key. An approximate analytical solution for the pull-in voltage of bridge-type test-key subjected to electrostatic load and initial stress is derived based on Euler’s beam model and the minimum energy method. Then one can use the aforesaid closed form solution of the pull-in voltage to extract the Young’s modulus and mean stress of the test structures. The test cases include the test-key fabricated by a TSMC 0.18 μm standard CMOS process, and the experimental results refer to Osterberg’s work on the pull-in voltage of single crystal silicone microbridges. The extracted material properties calculated by the present algorithm are valid. Besides, this paper also analyzes the robustness of this algorithm regarding the dimension effects of test-keys. This mechanical properties extracting method is expected to be applicable to the wafer-level testing in micro-device manufacture and compatible with the wafer-level testing in IC industry since the test process is non-destructive. Full article