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Keywords = radio frequency admittance

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12 pages, 9121 KiB  
Article
Partially Etched Piezoelectric Film Filled with SiO2 Structure Applied to A1 Mode Resonators for Transverse Modes Suppression
by Zhenyi Yu, Yu Guo, Sulei Fu, Baichuan Li, Peisen Liu, Shuai Zhang and Zongqin Sun
Micromachines 2023, 14(9), 1745; https://doi.org/10.3390/mi14091745 - 7 Sep 2023
Viewed by 1517
Abstract
With the arrival of the Fifth Generation (5G) communication era, there has been an urgent demand for acoustic filters with a high frequency and ultrawide bandwidth used in radio-frequency (RF) front-ends filtering and signal processing. First-order antisymmetric (A1) lamb mode resonators based on [...] Read more.
With the arrival of the Fifth Generation (5G) communication era, there has been an urgent demand for acoustic filters with a high frequency and ultrawide bandwidth used in radio-frequency (RF) front-ends filtering and signal processing. First-order antisymmetric (A1) lamb mode resonators based on LiNbO3 film have attracted wide attention due to their scalable, high operating frequency and large electromechanical coupling coefficients (K2), making them promising candidates for sub-6 GHz wideband filters. However, A1 mode resonators suffer from the occurrence of transverse modes, which should be addressed to make these devices suitable for applications. In this work, theoretical analysis is performed by finite element method (FEM), and the admittance characteristics of an A1 mode resonator and displacement of transverse modes near the resonant frequency (fr) are investigated. We propose a novel Dielectric-Embedded Piston Mode (DEPM) structure, achieved by partially etching a piezoelectric film filled with SiO2, which can almost suppress the transverse modes between the resonant frequency (fr) and anti-resonant frequency (fa) when applied on ZY-cut LiNbO3-based A1 mode resonators. This indicates that compared with Broadband Piston Mode (BPM), Filled-broadband Piston Mode (FPM) and standard structures, the DEPM structure is superior. Furthermore, the design parameters of the resonator are optimized by adjusting the width, depth and filled materials in the etched window of the DEPM structure to obtain a better suppression of transverse modes. The optimized A1 mode resonator using a DEPM structure exhibits a transverse-free response with a high fr of 3.22 GHz and a large K2 of ~30%, which promotes the application of A1 mode devices for use in 5G RF front-ends. Full article
(This article belongs to the Special Issue Acoustic Transducers and Their Applications)
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21 pages, 4211 KiB  
Article
The Transformer Bridge Principle Circuit Using RF Admittance Technology
by Fanfan Liu, Chaojie Zhang, Wenyong Guo and Xinglong Pan
Sensors 2023, 23(12), 5434; https://doi.org/10.3390/s23125434 - 8 Jun 2023
Cited by 1 | Viewed by 1482
Abstract
To investigate the problem of the lag stability of the capacitance value during the level drop of the dirty U-shaped liquid level sensor, the equivalent circuit of the dirty U-shaped liquid level sensor was analyzed, and the transformer bridge’s principle circuit that uses [...] Read more.
To investigate the problem of the lag stability of the capacitance value during the level drop of the dirty U-shaped liquid level sensor, the equivalent circuit of the dirty U-shaped liquid level sensor was analyzed, and the transformer bridge’s principle circuit that uses RF admittance technology was designed accordingly. Using the method of controlling a single variable, the measurement accuracy of the circuit was simulated when the dividing capacitance and the regulating capacitance had different values. Then, the right parameter values for the dividing capacitance and the regulating capacitance were found. On this basis, the change of the sensor output capacitance and the change of the length of the attached seawater mixture were controlled separately under the condition of removing the seawater mixture. The simulation outcomes showed that the measurement accuracy was excellent under various situations, validating the transformer principle bridge circuit’s efficacy in minimizing the influence of the output capacitance value’s lag stability. Full article
(This article belongs to the Special Issue RF and IoT Sensors: Design, Optimization and Applications)
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21 pages, 6550 KiB  
Article
Analysis of Multi-Stacked Dielectric Resonator Antenna with Its Equivalent R-L-C Circuit Modeling for Wireless Communication Systems
by Ram Krishna, Agbotiname Lucky Imoize, Rajveer Singh Yaduvanshi, Harendra Singh, Arun Kumar Rana and Subhendu Kumar Pani
Math. Comput. Appl. 2023, 28(1), 4; https://doi.org/10.3390/mca28010004 - 29 Dec 2022
Cited by 5 | Viewed by 2519
Abstract
The dielectric resonator antenna (DRA) can be modeled as a series and parallel combination of electrical networks consisting of a resistor (R), inductor (L), and capacitor (C) to address peculiar challenges in antennas suitable for application in emerging wireless communication systems for higher [...] Read more.
The dielectric resonator antenna (DRA) can be modeled as a series and parallel combination of electrical networks consisting of a resistor (R), inductor (L), and capacitor (C) to address peculiar challenges in antennas suitable for application in emerging wireless communication systems for higher frequency range. In this paper, a multi-stacked DRA has been proposed. The performance and characteristic features of the DRA have been analyzed by deriving the mathematical formulations for dynamic impedance, input impedance, admittance, bandwidth, and quality factor for fundamental and high-order resonant modes. Specifically, the performance of the projected multi-stacked DRA was analyzed in MATLAB and a high-frequency structure simulator (HFSS). Generally, results indicate that variation in the permittivity of substrates, such as high and low, can potentially increase and decrease the quality factor, respectively. In particular, the impedance, radiation fields and power flow have been demonstrated using the proposed multi-stacked electrical network of R, L, and C components coupled with a suitable transformer. Overall, the proposed multi-stacked DRA network shows an improved quality factor and selectivity, and bandwidth is reduced reasonably. The multi-stacked DRA network would find useful applications in radio frequency wireless communication systems. Additionally, for enhancing the impedance, BW of DRA a multi-stacked DRA is proposed by the use of ground-plane techniques with slots, dual-segment, and stacked DRA. The performance of multi-stacked DRA is improved by a factor of 10% as compared to existing models in terms of better flexibility, moderate gain, compact size, bandwidth, quality factor, resonant frequency, frequency impedance at the resonance frequency, and the radiation pattern with Terahertz frequency range. Full article
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9 pages, 371 KiB  
Article
Dirac-Based Quantum Admittance of 2D Nanomaterials at Radio Frequencies
by Tullio Rozzi, Davide Mencarelli, Gian Marco Zampa and Luca Pierantoni
Appl. Sci. 2022, 12(24), 12539; https://doi.org/10.3390/app122412539 - 7 Dec 2022
Cited by 1 | Viewed by 1448
Abstract
Starting from a rigorous finite mass, Dirac equation-based model, we investigate the R.F. quantum admittance of a monolayer 2D material under the action of an electromagnetic (e.m.) wave with axially directed vector potential. With some reasonable approximations, the analysis yields a relatively simple [...] Read more.
Starting from a rigorous finite mass, Dirac equation-based model, we investigate the R.F. quantum admittance of a monolayer 2D material under the action of an electromagnetic (e.m.) wave with axially directed vector potential. With some reasonable approximations, the analysis yields a relatively simple RLC-equivalent circuit with frequency-independent elements depending on the bias, temperature, effective mass, Fermi velocity and effective e.m. index of the material, losses and other relevant parameters. Full article
(This article belongs to the Section Applied Physics General)
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29 pages, 7680 KiB  
Review
Radio Frequency Reflectometry of Single-Electron Box Arrays for Nanoscale Voltage Sensing Applications
by Thomas A. Zirkle, Matthew J. Filmer, Jonathan Chisum, Alexei O. Orlov, Eva Dupont-Ferrier, Joffrey Rivard, Matthew Huebner, Marc Sanquer, Xavier Jehl and Gregory L. Snider
Appl. Sci. 2020, 10(24), 8797; https://doi.org/10.3390/app10248797 - 9 Dec 2020
Cited by 4 | Viewed by 3342
Abstract
Single-electron tunneling transistors (SETs) and boxes (SEBs) exploit the phenomenon of Coulomb blockade to achieve unprecedented charge sensitivities. Single-electron boxes, however, despite their simplicity compared to SETs, have rarely been used for practical applications. The main reason for that is that unlike a [...] Read more.
Single-electron tunneling transistors (SETs) and boxes (SEBs) exploit the phenomenon of Coulomb blockade to achieve unprecedented charge sensitivities. Single-electron boxes, however, despite their simplicity compared to SETs, have rarely been used for practical applications. The main reason for that is that unlike a SET where the gate voltage controls conductance between the source and the drain, an SEB is a two terminal device that requires either an integrated SET amplifier or high-frequency probing of its complex admittance by means of radio frequency reflectometry (RFR). The signal to noise ratio (SNR) for a SEB is small, due to its much lower admittance compared to a SET and thus matching networks are required for efficient coupling ofSEBs to an RFR setup. To boost the signal strength by a factor of N (due to a random offset charge) SEBs can be connected in parallel to form arrays sharing common gates and sources. The smaller the size of the SEB, the larger the charging energy of a SEB enabling higher operation temperature, and using devices with a small footprint (<0.01 µm2), a large number of devices (>1000) can be assembled into an array occupying just a few square microns. We show that it is possible to design SEB arrays that may compete with an SET in terms of sensitivity. In this, we tested SETs using RF reflectometry in a configuration with no DC through path (“DC-decoupled SET” or DCD SET) along with SEBs connected to the same matching network. The experiment shows that the lack of a path for a DC current makes SEBs and DCD SETs highly electrostatic discharge (ESD) tolerant, a very desirable feature for applications. We perform a detailed analysis of experimental data on SEB arrays of various sizes and compare it with simulations to devise several ways for practical applications of SEB arrays and DCD SETs. Full article
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21 pages, 11428 KiB  
Article
Presentation of a Complex Permittivity-Meter with Applications for Sensing the Moisture and Salinity of a Porous Media
by Xavier Chavanne and Jean-Pierre Frangi
Sensors 2014, 14(9), 15815-15835; https://doi.org/10.3390/s140915815 - 26 Aug 2014
Cited by 13 | Viewed by 5896
Abstract
This paper describes a sensor dedicated to measuring the vertical profile of the complex permittivity and the temperature of any medium in which sensor electrodes are inserted. Potential applications are the estimate of the humidity and salinity in a porous medium, such as [...] Read more.
This paper describes a sensor dedicated to measuring the vertical profile of the complex permittivity and the temperature of any medium in which sensor electrodes are inserted. Potential applications are the estimate of the humidity and salinity in a porous medium, such as a soil. It consists of vertically-stacked capacitors along two conductive parallel cylinders of 5 cm in diameter and at a 10-cm distance to scan a significant volume of the medium (~1 L). It measures their admittances owing to a self-balanced impedance bridge operating at a frequency in the range of 1–20 MHz, possibly 30 MHz. Thanks to accurate design and electronic circuit theory-based modeling, the determination of the admittances takes into account all distortions due to lead and bridge electromagnetic effects inside the sensor when working at high frequencies. Calibration procedures and uncertainties are presented. The article also describes developments to make the present sensor autonomous on digital acquisition, basic data treatment and energy, as well as able to transfer stored data by a radio link. These steps in progress are prerequisites for a wireless network of sensors. Full article
(This article belongs to the Special Issue State-of-the-Art Sensors Technology in France)
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