Search Results (84)

All-inorganic halide perovskites have attracted significant interest in photodetector applications due to their remarkable photoresponse properties. However, the toxicity and instability of lead-based perovskites hinder their commercialization. In this work, we propose cubic Ba₃SbI₃ as a promising, environmentally friendly, lead-free material for next-generation photodetector applications. Ba₃SbI₃ shows good light absorption, low effective masses, and favorable elemental abundance and cost, making it a promising candidate compound for device applications. Its structural, mechanical, electronic, and optical properties were systematically investigated using density functional theory (DFT) with the Perdew–Burke–Ernzerhof (PBE) and hybrid HSE06 functionals. The material was found to be dynamically and mechanically stable, with a direct bandgap of 0.78 eV (PBE) and 1.602 eV (HSE06). Photodetector performance was then simulated in an Al/FTO/In₂S₃/Ba₃SbI₃/Sb₂S₃/Ni configuration using SCAPS-1D. To optimize device efficiency, the width, dopant level, and bulk concentration for each layer of the gadgets were systematically modified, while the effects of interface defects, operating temperature, and series and shunt resistances were also evaluated. The optimized device achieved an open-circuit voltage (Voc) of 1.047 V, short-circuit current density (Jsc) of 31.65 mA/cm², responsivity of 0.605 A W⁻¹, and detectivity of 1.05 × 10¹⁷ Jones. In contrast, in the absence of the Sb₂S₃ layer, the performance was reduced to a Voc of 0.83 V, Jsc of 26.8 mA/cm², responsivity of 0.51 A W⁻¹, and detectivity of 1.5 × 10¹⁵ Jones. These results highlight Ba₃SbI₃ as a promising platform for high-performance, cost-effective, and environmentally benign photodetectors. Full article

High-performance self-powered ultraviolet (UV) photodetectors (PDs) based on mixed-dimensional 3D BiOCl nanosheet array/2D ZnO nanoparticle films heterojunction were fabricated via facile spin-coating and impregnation methods. Under zero bias, compared to the pristine ZnO PD exhibiting a large dark current (≈2 μA) and slow response time (>20 s/>20 s), the optimized 2-BiOCl-ZnO heterojunction PD demonstrated a dramatically suppressed dark current (≈1 nA), along with an ultrahigh on/off ratio (22,748) and a shorter response time (17.44 ms/14 ms) under 365 nm light illumination. This optimized device also achieved a remarkable responsivity of 1.08 A·W⁻¹ and a detectivity of 2.48 × 10¹³ Jones at 354 nm. The built-in electric field formed at the BiOCl-ZnO heterojunction interface, the improved light absorption enabled by the mixed-dimensional heterostructure, and the optimized charge carrier separation and transport within the device were responsible for the enhanced self-powered performance. Due to its fascinating photoelectric properties, this PD was applied as a self-powered signal receiver in a UV optical communication system, demonstrating the ability to achieve efficient and high-speed message transmission. The rational construction of BiOCl-based heterojunction has proved to be an efficient pathway to achieving self-powered photodetection. These results demonstrate that the rational construction of heterojunctions holds great potential for fabricating high-performance PDs. Full article

This article presents a remarkable achievement: a gallium oxide-based, non-metallic, fully transparent, and self-powered solar-blind ultraviolet photodetector. We have replaced the traditional metal electrode with gallium-doped zinc oxide (GZO), a transparent conductive oxide, for this transparent purpose. Gallium oxide, a wide-bandgap material suitable for solar-blind detection, is used as the active layer. Glass and natural mica are used for the transparent substrate. The gallium oxide thin film is deposited by RF sputtering at room temperature, with polycrystalline orientation, and the top integrated GZO electrode is also prepared at room temperature using the same technique. This simple two-layer structure device maintains a transmittance of over 88% in the visible spectrum for both substrates, a truly impressive performance. Both glass and mica substrates exhibit self-powered photoresponsivity at 265 nm with responsivities of 8.8 × 10⁻⁹ and 4.4 × 10⁻⁷ (A/W), operating with an externally applied voltage of 1 V and boasting a responsivity of around two orders of magnitude with rise/fall times less than 10 s. An X-ray diffractometer, ultraviolet–visible spectroscopy, semiconductor analysis, and a semiconductor electron microscope are used for material analysis and device performance. This article presents a transparent gallium oxide solar-blind photodetector with a simple structure. Our research explains the exceptional transmittance of non-metal electrodes with gallium oxide solar-blind photodetectors, setting a new standard in the field. Full article

In this paper, we design a self-powered photoelectrochemical (PEC)-type photodetector based on a hybridization of two-dimensional (2D) few-layer antimony (Sb) nanosheets (NSs) and reduced graphene oxide (rGO). The few-layer Sb NSs obtained by liquid-phase exfoliation can be anchored on the surface of rGO through hydrothermal treatment. Specifically, during photoexcitation, the electron–hole pairs photogenerated on the surface of Sb NSs can be well stimulated and transferred by rGO, reducing the photogenerated carriers recombine on Sb NSs. The excellent electrochemical performance is confirmed by PEC tests. The photobehavior performance of the Sb NSs-rGO composite is significantly improved; its photocurrent density reaches 48.830 nA/cm² at zero potential, approximately twice that of pure Sb NSs. The hybrid exhibits a faster photoresponse speed, with the response time and recovery time being 0.140 s and 0.163 s, respectively. This enhancement arises from the conductive role of rGO as a conductive channel, and as a result, the efficient separation of photoinduced electron–hole pairs is facilitated. This study is a further exploration of hybrid engineering of 2D materials in photochemical photodetectors and demonstrates significant progress in this field. Full article

Polarization information is essential for material identification, stress mapping, biological imaging, and robust vision under strong illumination, yet conventional approaches rely on external polarization optics and active biasing, which are bulky, alignment-sensitive, and power-hungry. A more desirable route is to encode polarization at the pixel level and read it out at zero bias, enabling compact, low-noise, and polarization imaging. Low-symmetry layered semiconductors provide persistent in-plane anisotropy as a materials basis for polarization selectivity. Here, we construct an eight-terminal radial ‘star-shaped’ Au/ReS₂ metal-semiconductor junction array pixel that operates in a genuine photovoltaic mode under zero external bias based on the photothermoelectric effect. Based on this, electrical summation of phase-matched multi-junction channels increases the signal amplitude approximately linearly without sacrificing the two-lobed modulation depth, achieving ‘gain by stacking’ without external amplification. The device exhibits millisecond-scale transient response and robust cycling stability and, as a minimal pixel unit, realizes polarization-resolved imaging and pattern recognition. Treating linear combinations of channels as operators in the polarization domain, these results provide a general pixel-level foundation for compact, zero-bias, and scalable polarization cameras and on-pixel computational sensing. Full article

Ternary chalcogenide-based sulfide materials with distorted morphologies such as BaZrS₃, CaZrS₃, and SrZrS₃, have recently gained much attention in optoelectronics and photovoltaics due to their high structural and thermal stability and compatibility with low-cost, earth-abundant synthesis routes. However, their relatively large bandgaps often limit their suitability for near-infrared (NIR) photodetectors. Here, we conducted a comprehensive investigation of SrHfSe₃, a ternary chalcogenide with an orthorhombic crystal structure and distinctive needle-like morphology, as a promising candidate for NIR photodetection. SrHfSe₃ exhibits a direct bandgap of 1.02 eV, placing it well within the NIR range. Its robust structure, high temperature stability, phase stability and natural abundance make it a compelling material for next-generation, self-powered NIR photodetectors. An in-depth analysis of the SrHfSe₃-based photodetector was performed using SCAPS-1D simulations, focusing on key performance metrics such as J–V behavior, photoresponsivity, and specific detectivity. Device optimization was achieved by thoroughly altering each layer thickness, doping concentrations, and defect densities. Additionally, the influence of interface defects, absorber bandgap, and operating temperature was assessed to enhance the photoresponse. Under optimal conditions, the device achieved a short-circuit current density (Jsc) of 45.88 mA/cm², an open-circuit voltage (Voc) of 0.7152 V, a peak photoresponsivity of 0.85 AW⁻¹, and a detectivity of 2.26 × 10¹⁴ Jones at 1100 nm. A broad spectral response spanning 700–1200 nm confirms its efficacy in the NIR region. These results position SrHfSe₃ as a strong contender for future NIR photodetectors and provide a foundation for experimental validation in advanced optoelectronic applications. Full article

Graphene’s exceptional carrier mobility and broadband absorption make it promising for ultrafast photodetection. However, its low optical absorption limits responsivity, while the absence of a bandgap results in high dark current, constraining the signal-to-noise ratio and efficiency. Although silicon (Si) photodetectors normally offer fabrication compatibility, their performance is severely hindered by interface trap states and optical shading. To overcome these limitations, we demonstrate an epitaxial graphene/n-Si heterojunction photodiode. This device utilizes graphene epitaxially grown on germanium integrated with a transferred Si thin film, eliminating polymer residues and interface defects common in transferred graphene. As a result, the fabricated photodetector achieves an ultralow dark current of 1.2 × 10⁻⁹ A, a high responsivity of 1430 A/W, and self-powered operation at room temperature. This work provides a strategy for high-sensitivity and low-power photodetection and demonstrates the practical integration potential of graphene/Si heterostructures for advanced optoelectronics. Full article

Photoelectrochemical devices have garnered extensive research attention in the field of smart and multifunctional photoelectronics, owing to their lightweight nature, eco-friendliness, and cost-effective manufacturing processes. In this work, Bi₂S₃/Bi₂O₃/TiO₂ heterojunction film was successfully fabricated and functioned as the photoelectrode of photoelectrochemical devices. The designed Bi₂S₃/Bi₂O₃/TiO₂ photoelectrochemical photodetector possesses a broad light detection spectrum ranging from 400 to 900 nm and impressive self-powered characteristics. At 0 V bias, the device exhibits an on/off current ratio of approximately 1.3 × 10⁶. It achieves a commendable detectivity of 5.7 × 10¹³ Jones as subjected to a 0.8 V bias potential, outperforming both bare TiO₂ and Bi₂O₃/TiO₂ photoelectrochemical devices. Moreover, the Bi₂S₃/Bi₂O₃/TiO₂ photoelectrode film shows great promise in pollutant decomposition, achieving nearly 97.7% degradation efficiency within 60 min. The appropriate band energy alignment and the presence of an internal electric field at the interface of the Bi₂S₃/Bi₂O₃/TiO₂ film serve as a potent driving force for the separation and transport of photogenerated carriers. These findings suggest that the Bi₂S₃/Bi₂O₃/TiO₂ heterojunction film could be a viable candidate as a photoelectrode material for the development of high-performance photoelectrochemical optoelectronic devices. Full article

Epitaxial growth of β-Ga₂O₃ nanowires on silicon substrates was realized by the low-pressure chemical vapor deposition (LPCVD) method. The as-grown Si/Ga₂O₃ heterojunctions were employed in the Underwater DUV detection. It is found that the carrier type as well as the carrier concentration of the silicon substrate significantly affect the performance of the Si/Ga₂O₃ heterojunction. The p-Si/β-Ga₂O₃ (2.68 × 10¹⁵ cm⁻³) devices exhibit a responsivity of up to 205.1 mA/W, which is twice the performance of the devices on the n-type substrate (responsivity of 93.69 mA/W). Moreover, the devices’ performance is enhanced with the increase in the carrier concentration of the p-type silicon substrates; the corresponding device on the high carrier concentration substrate (6.48 × 10¹⁷ cm⁻³) achieves a superior responsivity of 845.3 mA/W. The performance enhancement is mainly attributed to the built-in electric field at the p-Si/n-Ga₂O₃ heterojunction and the reduction in the Schottky barrier under high carrier concentration. These findings would provide a strategy for optimizing carrier transport and interface engineering in solar-blind UV photodetectors, advancing the practical use of high-performance solar-blind photodetectors for underwater application. Full article

Topological insulators (TIs) hold considerable promise for the advancement of optoelectronic technologies, including spectroscopy, imaging, and communication, owing to their remarkable optical and electrical characteristics. This study proposes a novel combination of Bi${}_2$Se${}_3$ TIs and ReSe${}_2$ for self-powered broadband photodetectors with high sensitivity and fast response time. The Bi${}_2$Se${}_3$/ReSe${}_2$ heterojunction photodetector achieves broadband response spectra ranging for 375 nm to 1 $\mathsf{\mu }$m. It demonstrates a significant responsivity of 64 mA/W at a wavelength of 600 nm (1 mW/cm${}^2$), exhibits a rapid response speed of 345 $\mathsf{\mu }$s rise/336 $\mathsf{\mu }$s fall time, and has a 3 dB bandwidth of 1.4 kHz under zero-bias conditions. The high performance can be attributed to the suitable energy band structure of Bi${}_2$Se${}_3$/ReSe${}_2$ and high carrier mobility in surface states of Bi${}_2$Se${}_3$. Excitingly, self-powered TIs photodetectors allow for high-quality signal transmission. The TIs employed in photodetectors can stimulate the production of new optoelectronic features, but they could also be used for highly integrated photonic circuits in the future. Full article

This work presents a high-performance novel photodetector based on two-dimensional boron nitride (BN) nanosheets functionalized with gold nanoparticles (Au NPs), offering ultra-broadband photoresponse from 0.25 to 5.9 μm. Operating in both photovoltaic and photoconductive modes, the device features rapid response times (<0.5 ms), high responsivity (up to 1015 mA/W at 250 nm and 2.5 V bias), and thermal stability up to 100 °C. The synthesis process involved CO₂ laser exfoliation of hexagonal boron nitride, followed by gold NP deposition via RF sputtering and thermal annealing. Structural and compositional analyses confirmed the formation of a three-dimensional network of atomically thin BN nanosheets decorated with uniformly distributed gold nanoparticles. This architecture facilitates plasmon-enhanced absorption and efficient charge separation via heterojunction interfaces, significantly boosting photocurrent generation across the deep ultraviolet (DUV), visible, near-infrared (NIR), and mid-infrared (MIR) spectral regions. First-principles calculations support the observed broadband response, confirming bandgap narrowing induced by defects in h-BN and functionalization by gold nanoparticles. The device’s self-driven operation, wide spectral response, and durability under elevated temperatures underscore its strong potential for next-generation broadband, self-powered, and wearable sensing and optoelectronic applications. Full article

Photodetectors are critical components in modern optoelectronic systems due to their extensive applications in information conversion and image storage. Selenium (Se), an element with a low melting point, a broad spectral response, and rapid response speed, exhibits a disadvantage of high optical reflectivity, which leads to a reduction in response. Spiro-MeOTAD, featuring controllable energy bands and facile processing, has its practical application limited by inadequate thermal and environmental stability. In this study, Spiro-MeOTAD-1 with enhanced stability was prepared through the optimization of dopants (Zn(TFSI)₂ and CNT:TiO₂) within Spiro-MeOTAD, to create a Se-F/Spiro-MeOTAD-1 heterojunction photodetector by subsequently compositing with selenium foam (Se-F). The self-powered device demonstrates exceptional photovoltaic performance within the wavelength range of 350–800 nm at 0 V bias, exhibiting a maximum responsivity of 108 mA W⁻¹, a switching ratio of 5 × 10³, a specific detectivity of 2.96 × 10¹² Jones, and a response time of 20 ms/50 ms. The device also demonstrates elevated environmental stability pretreatment at 140 °C following a one-month period. The photodetection stability of the Se-F/Spiro-MeOTAD-1 flexible PD was demonstrated by its capacity to retain 76.3% of its initial light current when subjected to 70 bending cycles at 30°. This finding further substantiates the photodetection stability of the material under various bending conditions. Further verification of the applicability of Spiro-MeOTAD-1 in Se-based devices establishes a novel paradigm for designing photodetectors with enhanced performance and stability. Full article

In the first part of this study, Y₂O₃-doped copper thiocyanate (CuSCN) with different x wt% (named CuSCN-xY, x = 0, 1, 2, and 3) films were synthesized onto ITO substrates using the spin coating method. UV-vis, SEM, AFM, EDS, and cyclic voltammetry were used to investigate the material properties of the proposed films. The conductivity and carrier mobility of the films increased with additional yttrium doping. It was found that the films with 2% Y₂O₃ (CuSCN-2Y) have the smallest valence band edges (5.28 eV). Meanwhile, CuSCN-2Y films demonstrated the densest surface morphology and the smallest surface roughness (22.8 nm), along with the highest conductivity value of 764 S cm⁻¹. Then, P-I-N self-powered UV photodetectors (PDs) were fabricated using the ITO substrate/ZnO seed layer/ZnO nanorod/CsPbBr₃/CuSCN-xY/Ag structure, and the characteristics of the devices were measured. In terms of response time, the rise time and fall time were reduced from 26 ms/22 ms to 9 ms/5 ms; the responsivity was increased from 243 mA/W to 534 mA/W, and the on/off ratio was increased to 2.47 × 10⁶. The results showed that Y₂O₃ doping also helped improve the P-I-N photodetector’s device performance, and the mechanisms were investigated. Compared with other published P-I-N self-powered photodetectors, our proposed devices show a fairly high on/off ratio, quick response times, and high responsivity and detectivity. Full article

Self-powered ultraviolet photodetectors hold significant potential for diverse applications across both military and civilian fields. Owing to its wide bandgap, high electron mobility, and adaptability to various substrates, gallium oxide (Ga₂O₃) serves as a crucial material for fabricating self-powered ultraviolet photodetectors. Photodetectors based on p-n heterojunctions of conductive polymers and gallium oxide have great application potential benefiting from unique advantages of conductive polymers. This review provides an extensive overview of typical ultraviolet photodetectors based on conductive polymer/gallium oxide heterojunctions, focusing on the physical structure, fabrication process, and photoelectric properties of heterojunction devices formed by Ga₂O₃ with conductive polymers like polythiophene, polyaniline, and polycarbazole, etc. Different conductive polymers yield varying performance improvements in the fabricated devices: polythiophene/Ga₂O₃ devices exhibit high conductivity and flexible bandgap tuning to meet diverse wavelength detection needs; PANI/Ga₂O₃ devices feature simple fabrication and low cost, with doping control to enhance charge carrier transport efficiency; polycarbazole/Ga₂O₃ devices offer high thermal stability and efficient hole transport. Among them, the polythiophene/Ga₂O₃ device demonstrates the most superior overall performance, making it the ideal choice for high-performance Ga₂O₃-based photodetectors and a representative of such research. This review identifies the existing technical challenges and provides valuable insights for designing more efficient Ga₂O₃/conductive polymer heterojunction photodetectors. Full article