Optical Thin Film and Photovoltaic (PV) Related Technologies

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Engineering for Energy Harvesting, Conversion, and Storage".

Deadline for manuscript submissions: closed (31 January 2023) | Viewed by 33443

Special Issue Editor


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Guest Editor
School of Intelligent Mechatronics Engineering, Sejong University, Gwangjin-gu, Seoul 05006, Republic of Korea
Interests: photovoltaics; energy conversion; magnetic nanoparticles; material synthesis (hydrothermal/solvothermal, solid state reaction); thin film growth; transparent conducting oxides (TCOs); thin-film transistor (TFT); vacuum deposition via sputtering; ferroelectrics; electromagnetism simulation
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Special Issue Information

Dear Colleagues,

As interest in the global warming problem has been growing, many groups have begun to search extensively for renewable energy sources such as solar, wind power, hydroelectric energy, and biomass devices without harm to humans and the Earth. Among them, solar energy-based photovoltaic (PV) devices are considered the most likely candidates as a clean energy resource without carbon dioxide emissions originating from burning fossil fuels. Since the photovoltaic effect was first reported by E. Becquerel in 1839, the phenomenon has been exploited for the conversion of solar energy directly into clean, reliable, scalable, and affordable energy such as electricity. Photovoltaic (PV) devices represented by solar cells and conventional solar cells have been widely used as both negative (N) and positive (P) type semiconductor materials. Between two different materials, a particular substrate absorbs light and emits electrons, or photons, that can move freely.

Meanwhile, the choice of structure (manufacturing structure, layers, and surface design, etc.) and materials (substrate, absorbance, and metal electrode) is a very important factor for the high performance of solar cells.

Moreover, flexible PV with foldable properties has been emerging on the new renewable energy market which is essential to realize flexible and wearable applications. Flexible PV devices can also be wearable and can be produced through low-cost and simple processes while achieving high performance. Flexible PV devices require a technology that focuses on the substrate, materials, driving circuits, etc.

The Special issue will deal with state-of-the-art technologies and the latest research advances in the photovoltaic (PV) field and energy-related research.

  • organic and inorganic photovoltaics
  • solar cells with silicon and beyond
  • flexible photovoltaics
  • photovoltaic technology and related technologies
  • energy conversion technology
  • film coating technology in vacuum and none vacuum

We look forward to receiving your contribution.

Dr. Sangmo Kim
Guest Editor

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Keywords

  • thin film growth
  • solar cell
  • flexible energy conversion
  • coating technology
  • photovoltaic (PV)-related technologies

Published Papers (13 papers)

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Research

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11 pages, 5509 KiB  
Article
Improved Performance of Perovskite Deep-Ultraviolet Photodetector Using FAPb(I/Br)3 as Light Absorption Layer
by Soo Beom Hong, Sangmo Kim and Hyung Wook Choi
Coatings 2023, 13(2), 341; https://doi.org/10.3390/coatings13020341 - 2 Feb 2023
Cited by 1 | Viewed by 1351
Abstract
Constitutive engineering by adding halide anions is one effective way to improve the performance of photodetectors by adjusting the bandgap. In this study, a mixed-anion perovskite thin film was facile fabricated by post-processing of a pure FAPbI3 film with a formamidinium bromide [...] Read more.
Constitutive engineering by adding halide anions is one effective way to improve the performance of photodetectors by adjusting the bandgap. In this study, a mixed-anion perovskite thin film was facile fabricated by post-processing of a pure FAPbI3 film with a formamidinium bromide (FABr) solution. In addition, the manufactured thin film was used as the light absorption layer, SnO2-SDBS as the electron transport layer, and spiro-OMeTAD as the hole injection layer to fabricate a deep ultraviolet(UV) photodetector. The device exhibited a response of 43.8 mA/W−1, a detectability of 3.56 × 1013 Jones, and an external quantum efficiency of 38%. Therefore, this study is promising for various applications in the deep-UV wavelength region. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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11 pages, 3521 KiB  
Article
Study on a Mixed-Cation Halide Perovskite-Based Deep-Ultraviolet Photodetector
by Ga In Choi, Chung Wung Bark and Hyung Wook Choi
Coatings 2023, 13(2), 248; https://doi.org/10.3390/coatings13020248 - 20 Jan 2023
Cited by 2 | Viewed by 1861
Abstract
Deep-ultraviolet (UV) sensing has attracted significant interest because of its wide range of applications. A mixed-cation halide perovskite-based photodetector prepared by mixing CH3NH3PbX3 (X = I, Br, and Cl) and HC(NH2)PbX3 (X = I, Br, [...] Read more.
Deep-ultraviolet (UV) sensing has attracted significant interest because of its wide range of applications. A mixed-cation halide perovskite-based photodetector prepared by mixing CH3NH3PbX3 (X = I, Br, and Cl) and HC(NH2)PbX3 (X = I, Br, and Cl) exhibits high stability and excellent light absorption. In this study, perovskite was prepared by mixing CH3NH3+ (FA+) and HC(NH2)2+ (MA+) cations using I, Br, and Cl halide anions. The bandgaps of the prepared perovskites increased to 1.48, 2.25, and 2.90 eV with I-, Br-, and Cl-, respectively, and the light absorption spectra shifted to shorter wavelengths. An increase in the redshift of the light absorption led to an increase in the photocurrent. The FAPbCl3-MAPbCl3-based photodetector showed a high responsivity of 5.64 mA/W, a detectivity of 4.03 × 1011, and an external quantum efficiency of 27.3%. The results suggested that the FAPbCl3-MAPbCl3 perovskite is suitable for deep-UV light sensing and is an excellent candidate for the fabrication of a sensitive photodetector. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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15 pages, 4809 KiB  
Article
Effect of Gamma Radiation on Structural and Optical Properties of ZnO and Mg-Doped ZnO Films Paired with Monte Carlo Simulation
by Mivolil Duinong, Rosfayanti Rasmidi, Fuei Pien Chee, Pak Yan Moh, Saafie Salleh, Khairul Anuar Mohd Salleh and Sofian Ibrahim
Coatings 2022, 12(10), 1590; https://doi.org/10.3390/coatings12101590 - 20 Oct 2022
Cited by 2 | Viewed by 1840
Abstract
In space, geostationary electronics located within the outer van Allen radiation belt are vulnerable to gamma radiation exposure. In terms of application, implementing an electronic system in a high radiation environment is impossible via conventional engineering materials such as metal alloys as they [...] Read more.
In space, geostationary electronics located within the outer van Allen radiation belt are vulnerable to gamma radiation exposure. In terms of application, implementing an electronic system in a high radiation environment is impossible via conventional engineering materials such as metal alloys as they are prone to radiation damage. Exposure to such radiation causes degradation and structural defects within the semiconductor component, significantly changing their overall density. The changes in the density will then cause electronic failure, known as the single event phenomena. Thus, the radiation response of material must be thoroughly investigated before the material is applied in a harsh radiation environment, specifically for flexible space borne electronic application. In this work, potential candidates for space-borne application devices: zinc oxide (ZnO) and Mg-doped ZnO thin film with a film thickness of 300 nm, were deposited onto an indium tin oxide (ITO) substrate via radio frequency (RF) sputtering method. The fabricated films were then irradiated by Co-60 gamma ray at a dose rate of 2 kGy/hr. The total ionizing dose (TID) effect of ZnO and Mg-doped ZnO thin films were then studied. From the results obtained, degradation towards the surface morphology, optical properties, and lattice parameters caused by increasing TID, ranging from 10 kGy–300 kGy, were evaluated. The alteration can be observed on the morphological changes due to the change in the roughness root mean square (RMS) with TID, while structural changes show increased strain and decreased crystallite size. For the optical properties, band gap tends to decrease with increased dose in response to colour centre (Farbe centre) effects resulting in a decrease in transmittance spectra of the fabricated films. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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11 pages, 2532 KiB  
Article
Ferroelectric B-Site Modified Bismuth Lanthanum Titanate Thin Films for High-Efficiency PV Systems
by Rui Tang, Rui He, Sangmo Kim and Chung Wung Bark
Coatings 2022, 12(9), 1315; https://doi.org/10.3390/coatings12091315 - 9 Sep 2022
Cited by 1 | Viewed by 1528
Abstract
Over the past decades, ferroelectric photovoltaic (FE-PV) systems, which use a homogenous ferroelectric material as a light-absorbing layer, have been studied using ferroelectric oxides. The PV activity of materials can be enhanced by adjusting the bandgap of materials, and it would have a [...] Read more.
Over the past decades, ferroelectric photovoltaic (FE-PV) systems, which use a homogenous ferroelectric material as a light-absorbing layer, have been studied using ferroelectric oxides. The PV activity of materials can be enhanced by adjusting the bandgap of materials, and it would have a large effect on the ferroelectric complex oxides. This phenomenon in epitaxial thin films of ferroelectric complex oxide, Bi3.25La0.75Ti3O12 (BLT), Fe- and Co-doped films were observed. Compared with undoped BLT, Co-(BLCT) doping and Fe and Co combined (BLFCT) doping resulted in the gradual reduction in the bandgap and efficient visible light absorption. The reduction in the bandgap to 11.4% and 18.1% smaller than the experimentally measured Eg of the bismuth titanate-based film using a simple Fe- and Co-doping method was performed, while maintaining ferroelectricity by analyzing the BLCT and BLFCT films based on polarization loops, and the temperature range of the out-of-plane lattice parameters and the photocurrent density of the BLFCT film was 32.2 times higher than that of the BLT film, which was caused by the decrease in the bandgap. This simple doping technique can be used to tune additional wide-bandgap complex oxides so that they can be used in photovoltaic energy conversion or optoelectronic devices. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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18 pages, 6162 KiB  
Article
Deep Learning-Based Spectrum Reconstruction Method for Raman Spectroscopy
by Qian Zhou, Zhiyong Zou and Lin Han
Coatings 2022, 12(8), 1229; https://doi.org/10.3390/coatings12081229 - 22 Aug 2022
Cited by 1 | Viewed by 2751
Abstract
Raman spectroscopy, measured by a Raman spectrometer, is usually disturbed by the instrument response function and noise, which leads to certain measurement error and further affects the accuracy of substance identification. In this paper, we propose a spectral reconstruction method which combines the [...] Read more.
Raman spectroscopy, measured by a Raman spectrometer, is usually disturbed by the instrument response function and noise, which leads to certain measurement error and further affects the accuracy of substance identification. In this paper, we propose a spectral reconstruction method which combines the existing maximum a posteriori (MAP) method and deep learning (DL) to recover the degraded Raman spectrum. The proposed method first employs the MAP method to reconstruct the measured Raman spectra, so as to obtain preliminary estimated Raman spectra. Then, a convolutional neural network (CNN) is trained by using the preliminary estimated Raman spectra and the real Raman spectra to learn the mapping from the preliminary estimated Raman spectra to the real Raman spectra, so as to achieve a better spectral reconstruction effect than merely using the MAP method or a CNN. To prove the effectiveness of the proposed spectral reconstruction method, we employed the proposed method and some traditional spectral reconstruction methods to reconstruct the simulated and measured Raman spectra, respectively. The experimental results show that compared with traditional methods, the estimated Raman spectra reconstructed by the proposed method are closer to the real Raman spectra. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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12 pages, 3674 KiB  
Article
Realizing Efficient Photoelectrochemical Performance for Well-Designed CdS@ZnIn2S4 Heterostructure Photoanode with Directional Interfacial Charge Transfer Dynamics
by Xianchen Wu, Yu Qian, Gangyang Lv, Liyuan Long, Yong Zhou and Dunhui Wang
Coatings 2022, 12(8), 1210; https://doi.org/10.3390/coatings12081210 - 18 Aug 2022
Viewed by 1839
Abstract
Designing a heterostructure photoanode with an appropriate band alignment, a beneficial charge migration pathway, and an adequate interfacial coupling is crucial for photoelectrochemical (PEC) energy conversion. Herein, we fabricate a hetero-nanostructure photoanode with CdS nanorods (CdS NRs) and two-dimensional (2D) ZnIn2S [...] Read more.
Designing a heterostructure photoanode with an appropriate band alignment, a beneficial charge migration pathway, and an adequate interfacial coupling is crucial for photoelectrochemical (PEC) energy conversion. Herein, we fabricate a hetero-nanostructure photoanode with CdS nanorods (CdS NRs) and two-dimensional (2D) ZnIn2S4 nanosheets (ZIS NSs) via a two-step in situ growth method on FTO glass to acquire a sufficient interfacial contact between two semiconductors. Based on their electronic band structures, the CdS is designed to be firstly grown on FTO to act as a photoelectron transport layer and 2D ZIS is further fabricated on the CdS as a photohole accumulation layer to directly contact the electrolyte. Benefitting from the Type II band alignment between the CdS and ZIS, such a heterostructure significantly enhances the separation efficiency and prolongs the lifetime of photocarriers. More importantly, it ensures that photoholes accumulate on the 2D ZIS with a highly exposed surface area for an oxidation reaction at the surface-active sites, while the photoelectrons transfer to counter electrode for hydrogen evolution. The optimum CdS@ZIS heterostructure photoanode exhibits a superior PEC performance with a photocurrent of 4.19 mA/cm2 at 1.23 VRHE (two times that of the CdS and eight times that of ZIS) and an applied bias photo-to-current efficiency (ABPE) of 1.93% at 0.49 VRHE. This work can inspire the future design of heterostructure photoanodes for highly efficient solar energy conversion. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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10 pages, 19843 KiB  
Article
Role of Materials Chemistry on Transparent Conductivity of Amorphous Nb-Doped SnO2 Thin Films Prepared by Remote Plasma Deposition
by Angang Song, Yiwen Wang, Suxiang Liu, Qinpu Wang and Junhua Hu
Coatings 2022, 12(8), 1111; https://doi.org/10.3390/coatings12081111 - 4 Aug 2022
Cited by 1 | Viewed by 1616
Abstract
In this study, remote plasma sputtering deposition of niobium-doped SnO2 transparent conductive oxides on glass substrates was carried out at ambient temperature with no post-deposition annealing. The microstructure, optical, electrical, and surface morphology of the thin films were characterized using a combination [...] Read more.
In this study, remote plasma sputtering deposition of niobium-doped SnO2 transparent conductive oxides on glass substrates was carried out at ambient temperature with no post-deposition annealing. The microstructure, optical, electrical, and surface morphology of the thin films were characterized using a combination of advanced techniques, such as X-ray diffraction (XRD), UV-Vis spectrophotometer, Hall-effect measurements, as well as field emission scanning electron microscope (FESEM), high-resolution transmission electron microscopy, and high-resolution X-ray photoelectron spectroscopy. It was determined that the oxygen defects of the films have a substantial impact on their transparent conductivity. The crystalline films, which were crystallized by annealing at 450 °C, had higher resistivities due to a decreased concentration of oxygen vacancies, which restricted conduction. In comparison, the amorphous films exhibited remarkable conductivity. The best amorphous films (Nb:SnO2) exhibited a resistivity of less than 4.6 × 10−3 Ω·cm, with a 3 × 1020 cm−3 carrier concentration and a 4.4 cm2/(V·S) of Hall mobility. X-ray amorphous Nb:SnO2 films can be used to make conductive and transparent protective layers that can be used to shield semiconducting photoelectrodes used in solar water splitting. These layers can also be used with more conductive TCO films (ITO or AZO) when needed. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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6 pages, 1718 KiB  
Article
Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures
by Kihyun Kim, Yehwan Kang, Seungbok Yun, Changheon Yang, Eunsik Jung, Jeongsoo Hong and Kyunghwan Kim
Coatings 2022, 12(6), 777; https://doi.org/10.3390/coatings12060777 - 4 Jun 2022
Cited by 7 | Viewed by 2693
Abstract
In this study, we investigated the characteristics of the n-type Ni/SiC ohmic contact using the laser annealing process on thin wafers. The electrical behavior of the ohmic contacts was tested in 4H-SiC JBS diode devices. As a result, a wafer thickness of 100 [...] Read more.
In this study, we investigated the characteristics of the n-type Ni/SiC ohmic contact using the laser annealing process on thin wafers. The electrical behavior of the ohmic contacts was tested in 4H-SiC JBS diode devices. As a result, a wafer thickness of 100 μm in the 4H-SiC JBS diode achieved a forward voltage of 1.33 V at 20 A with a laser annealing process using Ni silicide. Using a laser annealing process on a wafer thickness of 100 μm, an on-resistance decrease of almost 22% was demonstrated. Based on our experimental results, we suggest an alternative laser annealing fabrication scheme to obtain low on-resistance SiC power devices with thin structures after SiC grinding. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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10 pages, 6415 KiB  
Article
Effects of Drying Temperature and Molar Concentration on Structural, Optical, and Electrical Properties of β-Ga2O3 Thin Films Fabricated by Sol–Gel Method
by Taejun Park, Kyunghwan Kim and Jeongsoo Hong
Coatings 2021, 11(11), 1391; https://doi.org/10.3390/coatings11111391 - 15 Nov 2021
Cited by 12 | Viewed by 2286
Abstract
In this study, β-Ga2O3 films were fabricated on a quartz substrate by the sol–gel method using different drying temperatures and solutions of different molar concentrations, and their structural, optical, and electrical properties were evaluated. The as-fabricated films exhibited a monoclinic [...] Read more.
In this study, β-Ga2O3 films were fabricated on a quartz substrate by the sol–gel method using different drying temperatures and solutions of different molar concentrations, and their structural, optical, and electrical properties were evaluated. The as-fabricated films exhibited a monoclinic β-Ga2O3 crystal structure, whose crystallinity and crystallite size increased with increasing molar concentration of the solutions used and increasing drying temperature. Scanning electron microscopy of the as-prepared samples revealed dense surface morphologies and that the thickness of the films also depended on the deposition conditions. The average transmittance of all the samples was above 8% in visible light, and the calculated optical bandgap energy was 4.9 eV. The resistivity measured using a 4-point probe system was 3.7 × 103 Ω cm. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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13 pages, 5674 KiB  
Article
Thermoinduced and Photoinduced Sustainable Hydrophilic Surface of Sputtered-TiO2 Thin Film
by Sangbin Park, Younghwa Yoon, Sehyun Lee, Taejun Park, Kyunghwan Kim and Jeongsoo Hong
Coatings 2021, 11(11), 1360; https://doi.org/10.3390/coatings11111360 - 4 Nov 2021
Cited by 6 | Viewed by 1640
Abstract
To achieve self-cleaning at a low maintenance cost, we investigated the possibility of obtaining a sustainable hydrophilic surface of TiO2 thin film. As the hydrophilicity of TiO2 films fabricated by FTS has not yet been studied, we deposited TiOx using [...] Read more.
To achieve self-cleaning at a low maintenance cost, we investigated the possibility of obtaining a sustainable hydrophilic surface of TiO2 thin film. As the hydrophilicity of TiO2 films fabricated by FTS has not yet been studied, we deposited TiOx using FTS, and then TiO2 was formed through additional treatment. Hydrophilic surfaces were obtained by thermoinduced and photoinduced methods. UV irradiation led to the conversion of Ti4+ to Ti3+ in the lattice structure and an increase in the number of OH groups on the surface, and annealing induced the formation of Ti3+ defect sites, as well as organic degradation and changes in the crystal structure. Through the annealing process, the water contact angle of as-deposited film was decreased from 78.7° to 35.7°, and crystallinity changed from amorphous to anatase. These changes contributed to the formation of a hydrophilic surface and reduced the water contact angle by up to 10.8°. After the formation of a hydrophilic surface through annealing and UV irradiation, the sample returned to its original state. We confirmed that the water contact angle of the returned sample was decreased through exposure to sunlight; it reduced the water contact angle of the returned sample by 15.2°. Thus, the results revealed that the crystallinity influences the hydrophilicity and its sustainability for TiO2 films under sunlight. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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9 pages, 2549 KiB  
Article
Compositional Engineering of FAPbI3 Perovskite Added MACl with MAPbBr3 or FAPbBr3
by Sung Hwan Joo and Hyung Wook Choi
Coatings 2021, 11(10), 1184; https://doi.org/10.3390/coatings11101184 - 29 Sep 2021
Cited by 9 | Viewed by 4161
Abstract
Many attempts have been made to stabilize α-phase formamidinium lead iodide (α-FAPbI3) using mixed cations or anions with MA+, FA+, Br and I. A representative method is to stably produce α-FAPbI3 by adding [...] Read more.
Many attempts have been made to stabilize α-phase formamidinium lead iodide (α-FAPbI3) using mixed cations or anions with MA+, FA+, Br and I. A representative method is to stably produce α-FAPbI3 by adding methylammonium lead (MAPbBr3) to the light absorption layer of a perovskite solar cell and using methylammonium chloride (MACl) as an additive. However, in the perovskite containing MA+ and Br, the current density is lowered due to an unwanted increase in the bandgap; phase separation occurs due to the mixing of halides, and thermal stability is lowered. Therefore, in this study, in order to minimize the decrease in the composition ratio of FAPbI3 and to reduce MA+, the addition amount of MACl was first optimized. Thereafter, a new attempt was made to fabricate FAPbI3 perovskite by using formamidinium lead bromide (FAPbBr3) and MACl together as phase stabilizers instead of MAPbBr3. As for the FAPbI3-MAPbBr3 solar cell, the (FAPbI3)0.93(MAPbBr3)0.07 device showed the highest efficiency. On the other hand, in the case of the FAPbI3-FAPbBr3 solar cell, the (FAPbI3)0.99(FAPbBr3)0.01 solar cell with a very small FAPbBr3 composition ratio showed the highest efficiency with fast photovoltaic performance improvement and high crystallinity. In addition, the FAPbI3-FAPbBr3 solar cell showed a higher performance than the FAPbI3-MAPbBr3 solar cell, suggesting that FAPbBr3 can sufficiently replace MAPbBr3. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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Review

Jump to: Research

21 pages, 2583 KiB  
Review
Recent Progress in Perovskite Solar Cells: Status and Future
by Ying Chen, Man Zhang, Fuqiang Li and Zhenyuan Yang
Coatings 2023, 13(3), 644; https://doi.org/10.3390/coatings13030644 - 18 Mar 2023
Cited by 10 | Viewed by 6189
Abstract
The power conversion efficiency (PCE) of perovskite solar cells (PSCs) has seen effective performance upgrades, showing remarkable academic research and commercial application value. Compared with commercial silicon cells, the PCE gap is narrowing. However, the stability, cost, and large-scale production are still far [...] Read more.
The power conversion efficiency (PCE) of perovskite solar cells (PSCs) has seen effective performance upgrades, showing remarkable academic research and commercial application value. Compared with commercial silicon cells, the PCE gap is narrowing. However, the stability, cost, and large-scale production are still far behind. For scale-up preparing high-efficiency and stable PSCs, there is a variety of related research from each functional layer of perovskite solar cells. This review systematically summarizes the recent research on the functional layers, including the electron transport layer, perovskite layer, hole transport layer, and electrode. The common ETL materials, such as TiO2, SnO2, and ZnO, need doping and a bi-layer ETL to promote their property. Large-scale and low-cost production of perovskite layers with excellent performance and stability has always been the focus. The expensive and instability problems of Spiro-OMeTAD and electrode materials remain to be solved. The main problems and future development direction of them are also discussed. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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16 pages, 1456 KiB  
Review
Recent Progress on Boosting the Perovskite Film Quality of All-Inorganic Perovskite Solar Cells
by Ying Chen, Fuqiang Li, Man Zhang and Zhenyuan Yang
Coatings 2023, 13(2), 281; https://doi.org/10.3390/coatings13020281 - 26 Jan 2023
Cited by 6 | Viewed by 2524
Abstract
All-inorganic CsPbX3 perovskite material not only has the benefits of advanced light absorption coefficient, long carrier lifetime, and simple preparation process of organic–inorganic perovskite materials but it also maintains excellent stability under the erosion of damp heat. Stability is the premise of [...] Read more.
All-inorganic CsPbX3 perovskite material not only has the benefits of advanced light absorption coefficient, long carrier lifetime, and simple preparation process of organic–inorganic perovskite materials but it also maintains excellent stability under the erosion of damp heat. Stability is the premise of its industrialization, so all-inorganic perovskite is undoubtedly a very competitive direction for the development of perovskite materials. However, there are still many defects in the all-inorganic perovskite thin films, and it is difficult to obtain high power conversion efficiency (PCE). This review systematically summarizes additive engineering, solvent engineering, and interface engineering methods to promote the thin film property for a high PCE in recent years. Full article
(This article belongs to the Special Issue Optical Thin Film and Photovoltaic (PV) Related Technologies)
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