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Sensors 2013, 13(2), 2093-2112; doi:10.3390/s130202093

Comparative Study on the Performance of Five Different Hall Effect Devices

STI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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Received: 12 December 2012 / Revised: 25 January 2013 / Accepted: 4 February 2013 / Published: 5 February 2013
(This article belongs to the Section Physical Sensors)

Abstract

Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance. View Full-Text
Keywords: Hall Effect sensor design; offset; sensitivity; device polarization; 3D physical simulations Hall Effect sensor design; offset; sensitivity; device polarization; 3D physical simulations
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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Paun, M.-A.; Sallese, J.-M.; Kayal, M. Comparative Study on the Performance of Five Different Hall Effect Devices. Sensors 2013, 13, 2093-2112.

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