Crystals 2012, 2(3), 730-740; doi:10.3390/cryst2030730
Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor
1
Department of Electrical and Electronic Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
2
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
*
Author to whom correspondence should be addressed.
Received: 20 March 2012 / Revised: 15 June 2012 / Accepted: 18 June 2012 / Published: 29 June 2012
(This article belongs to the Special Issue Molecular Conductors)
Abstract
A gate-induced thermally stimulated current (TSC) on β′-(BEDT-TTF)(TCNQ) crystalline FET were conducted to elucidate the previously observed ferroelectric-like behaviors. TSC which is symmetric for the polarization of an applied VPG and has a peak at around 285 K was assigned as a pyroelectric current. By integrating the pyroelectric current, temperature dependence of the remnant polarization charge was obtained and the existence of the ferroelectric phase transition at 285 K was clearly demonstrated. We have tentatively concluded that the phase transition between dimer Mott insulator and charge ordered phase occurred at around the interface of organic crystal and substrate. View Full-TextKeywords:
ferroelectricity; pyroelectric current; field effect transistor; Mott insulator; charge order
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Sakai, M.; Hanada, M.; Kuniyoshi, S.; Yamauchi, H.; Nakamura, M.; Kudo, K. Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor. Crystals 2012, 2, 730-740.
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