Effect of Symmetry Breaking on Electronic Band Structure: Gap Opening at the High Symmetry Points
Abstract
1. Introduction
2. Experimental Details and Method of Calculations
2.1. Experimental Details
2.2. Calculation Method
3. Results and Discussion
3.1. Symmetry Analysis

3.2. The Ag/Cu(111) Reconstruction
3.3. Symmetry and Potential Properties

3.4. Electronic Properties of Ag/Cu(111)


4. Conclusions
Conflicts of Interest
References
- Anderson, P.W. More is different. Science 1972, 177, 393–397. [Google Scholar] [CrossRef] [PubMed]
- Higgs, P.W. Broken symmetries and the masses of gauge bosons. Phys. Rev. Lett. 1964, 13, 508–509. [Google Scholar] [CrossRef]
- Anderson, P.W. Basic Notions of Condensed Matter Physics; The Benjamin/Cummings Publishing Company, Inc.: Menio Park, CA, USA, 1984. [Google Scholar]
- Castro Neto, A.H.; Guinea, F.; Peres, N.M.R.; Novoselov, K.S.; Geim, A.K. The electronic properties of graphene. Rev. Mod. Phys. 2009, 81, 109–162. [Google Scholar] [CrossRef]
- Kogan, E.; Nazarov, V.U. Symmetry classification of energy bands in graphene. Phys. Rev. B 2012, 85, 115418:1–115418:5. [Google Scholar] [CrossRef]
- Starodub, E.; Bostwick, A.; Moreschini, L.; Nie, S.; El Gabaly, F.; McCarty, K.F.; Rotenberg, E. In-plane orientation effects on the electronic structure, stability, and Raman scattering of monolayer graphene on Ir(111). Phys. Rev. B 2011, 83, 125428:1–125428:9. [Google Scholar] [CrossRef]
- Meunier, I.; Tréglia, G.; Gay, J.-M.; Aufray, B.; Legrand, B. Ag/Cu(111) structure revisited through an extended mechanism for stress relaxation. Phys. Rev. B 1999, 59, 10910–10917. [Google Scholar] [CrossRef]
- N’Diaye, A.T.; Bleikamp, S.; Feibelman, P.J.; Michely, T. Two-dimensional Ir cluster lattice on a graphene moiré on Ir(111). Phys. Rev. Lett. 2006, 97, 215501:1–215501:4. [Google Scholar] [CrossRef]
- Reinert, F.; Nicolay, G.; Schmidt, S.; Ehm, D.; Hüfner, S. Direct measurements of the L-gap surface states on the (111) face of noble metals by photoelectron spectroscopy. Phys. Rev. B 2001, 63, 115415:1–115415:7. [Google Scholar] [CrossRef]
- Bendounan, A.; Cercellier, H.; Fagot-Revurat, Y.; Kierren, B.; Yurov, V.Y.; Malterre, D. Modification of Shockley states induced by surface reconstruction in epitaxial Ag films on Cu(111). Phys. Rev. B 2003, 67, 165412:1–165412:10. [Google Scholar] [CrossRef]
- Schiller, F.; Cordón, J.; Vyalikh, D.; Rubio, A.; Ortega, J.E. Fermi gap stabilization of an incommensurate two-dimensional superstructure. Phys. Rev. Lett. 2005, 94, 016103:1–016103:4. [Google Scholar] [CrossRef]
- Bendounan, A.; Forster, F.; Ziroff, J.; Schmitt, F.; Reinert, F. Influence of the reconstruction in Ag/Cu(111) on the surface electronic structure: Quantitative analysis of the induced band gap. Phys. Rev. B 2005, 72, 075407:1–075407:6. [Google Scholar] [CrossRef]
- Bendounan, A.; Forster, F.; Reinert, F.; Kierren, B.; Fagot-Revurat, Y.; Malterre, D. Comment on fermi gap stabilization of an incommensurate two-dimensional superstructure. Phys. Rev. Lett. 2006, 96. [Google Scholar] [CrossRef]
- Ashcroft, N.W.; Mermin, N.D. Solid State Physics; Cengage Learning: Stamford, CT, USA, 1976. [Google Scholar]
- Abd El-Fattah, Z.M.; Matena, M.; Corso, M.; García de Abajo, F.J.; Schiller, F.; Ortega, J.E. Lifshitz transition across the Ag/Cu(111) superlattice band gap tuned by interface doping. Phys. Rev. Lett. 2011, 107, 066803:1–066803:5. [Google Scholar] [CrossRef]
- García de Abajo, F.J.; Cordón, J.; Corso, M.; Schiller, F.; Ortega, J.E. Fermi gap engineering by Au doping of the Ag/Cu(111) dislocation network. Nanoscale 2010, 2, 717–721. [Google Scholar] [CrossRef] [PubMed]
- Vasseur, G.; Fagot-Revurat, Y.; Kierren, B.; Sicot, M.; Malterre, D. Electronic surface potential from angle resolved photoemission. Phys. Rev. B. 2013, in press. [Google Scholar] [CrossRef]
- Malterre, D.; Kierren, B.; Fagot-Revurat, Y.; Pons, S.; Tejeda, A.; Didiot, C.; Cercellier, H.; Bendounan, A. ARPES and STS investigation of Shockley states in thin metallic films and periodic nanostructures. New J. Phys. 2007, 9, 391:1–391:29. [Google Scholar] [CrossRef]
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Vasseur, G.; Fagot-Revurat, Y.; Kierren, B.; Sicot, M.; Malterre, D. Effect of Symmetry Breaking on Electronic Band Structure: Gap Opening at the High Symmetry Points. Symmetry 2013, 5, 344-354. https://doi.org/10.3390/sym5040344
Vasseur G, Fagot-Revurat Y, Kierren B, Sicot M, Malterre D. Effect of Symmetry Breaking on Electronic Band Structure: Gap Opening at the High Symmetry Points. Symmetry. 2013; 5(4):344-354. https://doi.org/10.3390/sym5040344
Chicago/Turabian StyleVasseur, Guillaume, Yannick Fagot-Revurat, Bertrand Kierren, Muriel Sicot, and Daniel Malterre. 2013. "Effect of Symmetry Breaking on Electronic Band Structure: Gap Opening at the High Symmetry Points" Symmetry 5, no. 4: 344-354. https://doi.org/10.3390/sym5040344
APA StyleVasseur, G., Fagot-Revurat, Y., Kierren, B., Sicot, M., & Malterre, D. (2013). Effect of Symmetry Breaking on Electronic Band Structure: Gap Opening at the High Symmetry Points. Symmetry, 5(4), 344-354. https://doi.org/10.3390/sym5040344
