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Article

Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET

by
Hyeonjae Won
1 and
Myounggon Kang
1,2,*
1
Department of Electronic Engineering, Korea National University of Transportation, Room No. 307, IT Building, 50 Daehak-ro, Chungju-si, Chungbuk 27469, Korea
2
Department of IT Energy Convergence (BK21 FOUR), Korea National University of Transportation, Room No. 307, IT Building, 50 Daehak-ro, Chungju-si, Chungbuk 27469, Korea
*
Author to whom correspondence should be addressed.
Appl. Sci. 2021, 11(3), 894; https://doi.org/10.3390/app11030894
Submission received: 13 December 2020 / Revised: 11 January 2021 / Accepted: 18 January 2021 / Published: 20 January 2021
(This article belongs to the Special Issue Device Modeling for TCAD and Circuit Simulation)
Browse Figures
Versions Notes

Abstract

:
In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices. Similar to n-type devices, p-type NW-FETs are less affected than FinFETs by the TID effect. For the inverter TID circuit simulation, both n- and p-types of FinFET and NW-FET were analyzed regarding the TID effect. The inverter operation considering the TID effect was verified using the Berkeley short-channel insulated-gate FET model (BSIM) common multi-gate (CMG) parameters. In addition, an inverter circuit composed of the NW-FET exhibited a smaller change by the TID than that of an inverter circuit composed of the FinFET. Therefore, the gate controllability of the gate-all-around (GAA) device had an excellent tolerance to not only short-channel effects (SCE) but also TID effects.

1. Introduction

Radiation hardening on semiconductor devices is a critical issue in various fields including radiation therapy, space, and nuclear reactor processes. The characteristics of devices change when they are exposed to a radiation environment. Designs, processes and shielding to reduce radiation effects are actively being studied in [1,2,3,4]. However, the research on the radiation effect in a single device is still insufficient. Single event effects (SEE), total ionizing dose (TID) effects, soft error rate (SER), displacement damage (DD), and multiple bit upsets (MBU) lead to the obstruction of the reliable operation of semiconductor devices due to radiation [5,6,7,8,9]. The TID effect causes the issue of changing the electrical properties of semiconductor devices due to the hole trap. When the particles pass the dielectric area, electron–hole pairs (EHP) are generated. Electrons with relatively fast mobility exit the dielectric region, but holes with low mobility have some holes trapped at the existing trap site, which increases the leakage current and causes a threshold voltage (VT) shift [10]. Therefore, the device reliability is degraded. Nanoscale devices can be further affected by other static and dynamic parameters by the TID effect [11]. However, it is challenging to analyze the exact radiation effect due to the trap recovery of the irradiated device from the measurement [12,13]. Therefore, the TID phenomenon should be analyzed only by a simulation.
VTs has been used in the industry to continue the complementary metal–oxide–semiconductor (CMOS) scaling. However, critical issues such as the short-channel effect (SCE), VT roll-off, and parasitic resistance emerge upon the FinFET scaling [14]. To alleviate these issues, Nanowire FET (NW-FET) has strong gate controllability and has been proposed to replace the FinFETs [15,16]. The better gate controllability provided by the gate-all-around (GAA) structure can overcome the SCE problem and enable a more aggressive gate length scaling than that for the FinFETs [17,18,19,20]. Therefore, it is a promising solution for device miniaturization [21]. Thus, studies to mitigate the radiation effect of devices with this structure are required. In this study, TID simulations of a FinFET and NW-FET were carried out to analyze the element with a larger TID effect, according to the device structural part. This study was carried out by comparing the structural elements of the oxide area and gate controllability. Accurate TID simulation results were compared by calibrating the current and device sizes of the NW-FET and FinFET.
As the oxide area increases, more EHP occurs and the number of trapped holes increases. However, despite the larger oxide area of the NW-FET than the FinFET, the VT did not change significantly, and the device appeared to be more resistant to radiation. It is shown by introducing the GAA structure, that the higher the gate controllability, the more the TID effect can be suppressed in the oxide region. In addition, the FinFET and NW-FET affected by the TID were extracted using a Berkeley short-channel insulated-gate FET (BSIM) common multi-gate (CMG) and applied to an inverter circuit to perform the simulation.

2. Methodology of TID Simulation

2.1. Device Structure Design

The TID effects of an NMOS FinFET and NW-FET have been analyzed [22]. In this study, we analyze the TID effect of PMOS devices. The PMOS NW-FET was stacked in five stages to match the current and device size to those in the NMOS device study. The FinFET and NW-FET were similarly constructed by the three-dimensional (3D) technology computer-aided design (TCAD) simulation tool. The PMOS FinFET was designed as an equal NMOS considering the International Technology Roadmap for Semiconductors (ITRS) [23]. Figure 1 shows the TCAD structures of the FinFET and NW-FET.
The devices were made with a silicon body and the n- and p-types dopant was phosphorus and boron. The device channel insulator materials were deposited SiO2 and HfO2. The ID-VG characteristics were calibrated for an accurate comparison of the TID effects. Table 1 and Table 2 show each design’s parameters and the initial VT characteristics of the FinFET and NW-FET, respectively.

2.2. Condition of TID Simulation

For the TID simulation, we used the Silvaco’s Victory Device platform [24]. The Klaassen model was applied to the TID simulation to reflect electron and hole mobilities, trap parameters, recombination parameters, etc. [25,26,27,28,29]. In the TID simulation, the insulator region’s trap–detrap model parameters were used as in [30]. The simulation was performed precisely, as the interface trap between SiO2 and HfO2 was calculated by using an interface trap parameter between the insulators. In the TID simulation, γ-ray irradiation obtained using a 60Co source was used [31]. Each device was irradiated at 1 rad/s. The simulation was carried out at 100 krad, 1 Mrad, 10 Mrad, and 100 Mrad.

3. TID Simulation Results and Procedure of Compact Modeling with TID

Figure 2 shows the PMOS device’s electrical characteristics according to the total dose. VT was extracted when the drain absolute current was 0.1 μA using the constant current method, as shown in Figure 2. As the holes were trapped in the insulator region, VT was shifted. The electrical properties further changed with the increase in the radiation dose.
Figure 3 shows the VT shift for each TID for both FinFET and NW-FET. The result before 10 Mrad shows a large change in the VT of PMOS devices, but the result is reversed at 100 Mrad. Also, the VT variation of n-type and p-type devices is about several mV. In the case of planar MOSFET, it is known that the PMOS device is affected more by the TID effect due to the interface trap. However, in the case of nanoscale 3D-structure devices, the influence of the interface trap is reduced because of the short channel length, and the VT variation of n-type and p-type is similar. In addition, the more a device has a strong gate controllability, the less variation in the TID effect [32,33]. The NW-FET exhibits a smaller VT shift than that of the FinFET. The NW-FET has a wider oxide area than FinFET. Thus, NW-FET had to be more affected by a TID effect and exhibit a larger VT shift than FinFET. However, the NW-FET was less affected due to the superior gate controllability. This is suppressed not only the SCE problem, but also the TID effect issue [34]. Structurally, the NW-FET insulator area was larger (96.1 nm2) than that in the FinFET. However, contrary to the expectations, the NW-FET had a smaller TID effect than that of FinFET. Therefore, the gate controllability is more important in the TID effect suppression than the oxide area.
The simulation of TID circuits requires a very long time period because of the numerous calculations. However, the spice circuit simulation method, which extracts and executes BSIM parameters, can check results faster than the conventional TCAD circuit simulation. Thus, for the circuit simulation, parameters of the BSIM, widely used in the industry as a standard compact model, were extracted. Figure 4 shows a flow chart of parameter extraction considering the TID characteristics. TID simulation data from the Victory Device platform were extracted using various BSIM CMG parameters. The extracted data were applied to the circuit simulation considering the TID.

4. Circuit Characteristics with the TID Effect

To extract the data for the inverter circuit simulation, calibration with the existing TCAD TID simulation data using BSIM CMG parameters was carried out. Figure 5 shows the results of the calibration of the electrical characteristics of the FinFET and NW-FET with the BSIM CMG parameters. The electrical properties of the FinFET and NW-FET fit well with the data extracted by the BSIM CMG parameters. In addition, the TID simulation data in Figure 2 were extracted using the BSIM CMG parameters according to the radiation dose.
Figure 6 shows the device inverter operating characteristics according to the cumulative radiation dose. Larger switching point variations are observed with the increase in the total dose. Owing to the VT shift of NMOS, the falling edge of the inverter operation causes a faster descent, while the VT shift of PMOS causes a slow rise. Therefore, the TID effect changes the operating characteristics of the inverter and degrades the reliability. In addition, the FinFET inverter operation is more shifted than that of the NW-FET by the TID effect. The difference originates from the different gate controllability. The NW-FET inverter operation has a smaller variation with the TID than that of the FinFET inverter operation owing to its high gate controllability.

5. Conclusions

The NW-FET device exhibited a smaller ionizing radiation sensitivity than that of the FinFET device. The NW-FET had a larger insulator area than that of the FinFET, approximately 96 nm2. However, the NW-FET was less affected by the TID effect than the FinFET. The structure with a larger gate controllability confirmed that the TID effect can be effectively overcome. To improve the gate controllability method, a GAA structure and high-k dielectric materials have to be introduced. In addition, we not only analyzed the effect of the TID on the device but also applied it to the inverter using the BSIM CMG parameter reflecting the TID. The TID effect changed the operating characteristics of the inverter and degraded the reliability. However, the NW-FET inverter operation had a smaller variation with the TID than that of the FinFET inverter operation because of its high gate controllability. Therefore, NW-FET devices are tolerant to the TID, which improves the circuit operation stability in radiation environments.

Author Contributions

Carried out the simulation and methodology, H.W.; Writing—Original draft, H.W.; design figures, H.W.; was responsible for project administration, M.K.; supervision, M.K.; proofreading of the manuscript, M.K.; funding, M.K. All authors have read and agreed to the published version of the manuscript.

Funding

This research was supported by the MOTIE (Ministry of Trade, Industry and Energy (10085645) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor devices and in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1A6A1A03023788) and in part by Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (MOTIE) (N000P0008500, The Competency Development Program for Industry Specialist) and in part by National R&D Program through the National Research Foundation of Korea(NRF) funded by Ministry of Science and ICT(2020M3F3A2A01085755).

Institutional Review Board Statement

Not applicable.

Informed Consent Statement

Not applicable.

Data Availability Statement

Data sharing not applicable.

Acknowledgments

The authors thank Ilsik Ham for his technical advice and feedback regarding this paper.

Conflicts of Interest

The authors declare no conflict of interest.

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Applsci 11 00894 g001 550
Figure 1. Technology computer-aided design (TCAD) structures of the FinFET and Nanowire FET (NW-FET). (a) FinFET 3D structure; (b) FinFET’s cross-section of gate; (c) FinFET’s cross-section of channel length; (d) NW-FET 3D structure; (e) NW-FET’s cross-section of gate; (f) NW-FET’s cross-section of channel length.
Figure 1. Technology computer-aided design (TCAD) structures of the FinFET and Nanowire FET (NW-FET). (a) FinFET 3D structure; (b) FinFET’s cross-section of gate; (c) FinFET’s cross-section of channel length; (d) NW-FET 3D structure; (e) NW-FET’s cross-section of gate; (f) NW-FET’s cross-section of channel length.
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Figure 2. ID–VG curve shift with the increase in the radiation dose up to 100 Mrad. The simulation method sweeps VG from 0 to 0.7 V when the total dose is reached. (a) PMOS FinFET; (b) PMOS NW-FET.
Figure 2. ID–VG curve shift with the increase in the radiation dose up to 100 Mrad. The simulation method sweeps VG from 0 to 0.7 V when the total dose is reached. (a) PMOS FinFET; (b) PMOS NW-FET.
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Figure 3. FinFET and NW-FET VT shifts according to the total ionizing dose (TID).
Figure 3. FinFET and NW-FET VT shifts according to the total ionizing dose (TID).
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Figure 4. Flow chart of the simulations considering the TID effect.
Figure 4. Flow chart of the simulations considering the TID effect.
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Figure 5. Calibration of the electrical characteristics of the FinFET and NW-FET with the Berkeley short-channel insulated-gate FET (BSIM) common multi-gate (CMG) parameters.
Figure 5. Calibration of the electrical characteristics of the FinFET and NW-FET with the Berkeley short-channel insulated-gate FET (BSIM) common multi-gate (CMG) parameters.
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Figure 6. FinFET and NW-FET inverter operation characteristics according to the accumulated radiation dose. (a,e) inverter input pulse; (b) FinFET inverter output for each total dose; (c) FinFET inverter operation of falling edge; (d) FinFET inverter operation of rising edge; (f) NW-FET inverter output for each total dose; (g) NW-FET inverter operation of falling edge; (h) NW-FET inverter operation of rising edge.
Figure 6. FinFET and NW-FET inverter operation characteristics according to the accumulated radiation dose. (a,e) inverter input pulse; (b) FinFET inverter output for each total dose; (c) FinFET inverter operation of falling edge; (d) FinFET inverter operation of rising edge; (f) NW-FET inverter output for each total dose; (g) NW-FET inverter operation of falling edge; (h) NW-FET inverter operation of rising edge.
Applsci 11 00894 g006
Table
Table 1. Device’s parameters.
Table 1. Device’s parameters.
Design FactorFinFETNW-FET
Channel length12 nm12 nm
FinFET’s width and NW-FET’s diameter6 nm6 nm
Height (NW-FET total height)42 nm30 nm
Total area489.5 nm2474.9 nm2
S/D doping1 × 1021 cm−31 × 1021 cm−3
Channel doping1 × 1016 cm−31 × 1016 cm−3
Oxide area237.5 nm2333.6 nm2
EOT0.812 nm0.812 nm
Table
Table 2. VT data of each device.
Table 2. VT data of each device.
VDD = 0.65 VFinFET (VT)NW-FET (VT)
NMOS0.33 V0.4 V
PMOS0.3 V0.38 V
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Won, H.; Kang, M. Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET. Appl. Sci. 2021, 11, 894. https://doi.org/10.3390/app11030894

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Won H, Kang M. Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET. Applied Sciences. 2021; 11(3):894. https://doi.org/10.3390/app11030894

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Won, Hyeonjae, and Myounggon Kang. 2021. "Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET" Applied Sciences 11, no. 3: 894. https://doi.org/10.3390/app11030894

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