Low-Loss Micro-Resonator Filters Fabricated in Silicon by CMOS-Compatible Lithographic Techniques: Design and Characterization
Abstract
:1. Introduction
2. Materials and Methods
2.1. Filter Design
- the minimum gap between adjacent waveguides was set to 200 nm, in order to allow a full-etch of the region using standard lithographic techniques;
- the bus waveguide had to be 500 nm wide, so as to match the width of the waveguides used for the other components of the final chip;
- the height of the waveguides could be 220 nm (corresponding to the height of the Si layer present on the SOI wafers), or could be reduced to 100 nm, as a fabrication step with a 120-nm etch depth was already present in the process flow, but no other height-value could be used for the filter’s design;
- it was important to realize a fabrication-tolerant design, as the fabrication process was based on standard lithographic techniques and was not exploiting the e-beam high-resolution, as often done in scientific research where performance is the main challenge and production-price is not an issue.
2.2. Structures Parameters
2.3. Fabrication Procedure
2.4. Experimental Characterization Setup
3. Results
3.1. Experimental Results
3.2. Final Filter Design
3.2.1. Structures Parameters
3.2.2. Experimental Results
4. Discussion
5. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Parameter | Value |
---|---|
Operation band | 1530–1570 nm |
Channel spacing | 100 GHz |
Free Spectral Range | 12.8 nm |
Insertion Loss | <1 dB |
Suppression adjacent channels | >15 dB |
Suppression non-adjacent channels | >20 dB |
Parameter | Units | Racetracks | Rings |
---|---|---|---|
Bus waveguide (width × height) | nm × nm | 500 × 220 | 500 × 100 |
Resonator waveguide (width × height) | nm × nm | 500 × 220 | 825 × 100 |
Straight-leg | nm | 4745 | N.A. |
Curve radius (@ waveguide center) | nm | 4490 | 6000 |
Bus-to-Resonator gap | nm | 200 | 410 |
Inter-Resonator gap | nm | 415 | 340 |
Parameter | Units | Racetracks | Rings |
---|---|---|---|
Insertion Loss | dB | 2.0 | 4.6 |
−3 dB Bandwidth | GHz | 47 | 73 |
−20 dB Bandwidth | GHz | 158 | 208 |
Suppression @ 100 GHz | dB | 24 | 19 |
Parameter | Units | Racetracks | Rings |
---|---|---|---|
Bus waveguide (width × height) | nm × nm | 500 × 220 | 500 × 100 |
Resonator waveguide (width × height) | nm × nm | 500 × 220 | 800 × 100 |
Straight-leg | nm | 8160 | N.A. |
Curve radius (@ waveguide center) | nm | 3600 | 8400 |
Bus-to-Resonator gap | nm | 250 | 515 |
Inter-Resonator gap | nm | 460 | 355 |
Parameter | Units | Racetracks | Rings |
---|---|---|---|
Insertion Loss | dB | 1.9–2.9 | 0.8–1.5 |
−3 dB Bandwidth | GHz | 37–40 | 35–39 |
−20 dB Bandwidth | GHz | 115–131 | 95–109 |
Suppression @ 100 GHz | dB | 26–35 | 30–35 |
Thermo-optical tuning efficiency | mW/nm | 2.5–2.6 | 4.8–5.5 |
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Marchetti, R.; Vitali, V.; Lacava, C.; Cristiani, I.; Giuliani, G.; Muffato, V.; Fournier, M.; Abrate, S.; Gaudino, R.; Temporiti, E.; et al. Low-Loss Micro-Resonator Filters Fabricated in Silicon by CMOS-Compatible Lithographic Techniques: Design and Characterization. Appl. Sci. 2017, 7, 174. https://doi.org/10.3390/app7020174
Marchetti R, Vitali V, Lacava C, Cristiani I, Giuliani G, Muffato V, Fournier M, Abrate S, Gaudino R, Temporiti E, et al. Low-Loss Micro-Resonator Filters Fabricated in Silicon by CMOS-Compatible Lithographic Techniques: Design and Characterization. Applied Sciences. 2017; 7(2):174. https://doi.org/10.3390/app7020174
Chicago/Turabian StyleMarchetti, Riccardo, Valerio Vitali, Cosimo Lacava, Ilaria Cristiani, Guido Giuliani, Viviane Muffato, Maryse Fournier, Silvio Abrate, Roberto Gaudino, Enrico Temporiti, and et al. 2017. "Low-Loss Micro-Resonator Filters Fabricated in Silicon by CMOS-Compatible Lithographic Techniques: Design and Characterization" Applied Sciences 7, no. 2: 174. https://doi.org/10.3390/app7020174