Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques
Abstract
:1. Introduction
- Short carrier lifetime: The carrier lifetime is the average time that a charge carrier (electron or hole) can exist before it recombines with another carrier. The short carrier lifetime in Sb2Se3 is due to the high density of defects, such as Se vacancies and SbSe/SeSb antisite defects [9].
- Low hole density: The hole density is the number of holes per unit volume in a semiconductor material. The low hole density in intrinsic Sb2Se3 is another factor that limits the efficiency of the solar cells [2].
- Lack of suitable hole and electron transport layer materials: The hole transport layer (HTL) and electron transport layer (ETL) are the materials that transport the holes and electrons, respectively, to the respective electrodes of the solar cell. The lack of suitable HTL and ETL materials is also a challenge for the development of high-efficiency Sb2Se3 solar cells [10].
2. Physical Vapor Deposition Techniques for Planar-Type Structure Sb2Se3 Solar Cells
- A transparent electrode layer or metal grid (Al or Au)
- A window layer (for example undoped ZnO)
- An ETL (for example CdS)
- An Sb2Se3 absorber layer
- An HTL
- A metallic or conductive oxide back-contact
- A glass substrate.
- A metal contact
- An HTL (for example Spiro-MeOTAD, P3HT, NiOx)
- An Sb2Se3 absorber layer
- An ETL (for example TiO2 or CdS)
- A transparent conductive oxide
- Glass (substrate).
- Magnetron sputtering;
- Close-spaced sublimation (CSS);
- Rapid thermal evaporation (RTE);
- Vapor transport deposition (VTD);
- Injected vapor deposition (IVT);
- Pulsed laser deposition (PLD);
- Pulsed electron deposition (PED).
2.1. Magnetron Sputtering
2.2. Close-Spaced Sublimation
2.3. Rapid Thermal Evaporation
2.4. Vapor Transport Deposition
2.5. Injected Vapor Deposition
2.6. Pulsed Laser Deposition
2.7. Pulsed Electron Deposition
3. The Main Challenges for Sb2Se3—Based Solar Cells (1D-Ribbon Alignment, HTL/ETL, Interfacial Engineering and Band Alignment, Doping)
3.1. One-Dimensional-Ribbon Alignment
3.2. HTL/ETL, Interfacial Engineering, and Band Alignment
3.2.1. ETLs
3.2.2. HTLs
3.3. Doping
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
Nomenclature
Ag | Silver |
AgSbSe2 | Silver antimony selenide |
Al | Aluminum |
Al2O3 | Aluminum(III) oxide |
ALD | Atomic layer deposition |
Alq3 | Tris(8-hydroxyquinolinato)aluminum, Al(C9H6NO)3 |
Ar | Argon |
Au | Gold |
AZO | Aluminum-doped zinc oxide |
C60 | Buckminsterfullerene |
CBD | Chemical bath deposition |
CBO | Conduction band offset |
Cd | Cadmium |
CdCl2 | Cadmium chloride |
CdS | Cadmium sulfide |
CdS:O | Oxygenated cadmium sulfide |
CdTe | Cadmium telluride |
CdZnS | Cadmium zinc sulfide |
CeO2 | Cerium(IV) oxide |
CIGS, Cu(In,Ga)Se2 | Copper indium gallium (di)selenide |
CIGSSe | Copper indium gallium sulfur selenide |
CSS | Close-space sublimation |
CuI | Copper(I) iodide |
CuInSe2 | Copper indium selenide |
CuSbSe2 | Copper antimony selenide |
CuSCN | Copper(I) thiocyanate |
CZ-TA | 4,4′,4′′,4′′′-(9-Octylcarbazole-1,3,6,8-tetrayl)tetrakis(N,N-bis(4-methoxyphenyl)aniline) |
CZTS | Copper zinc tin sulfide |
CZTSSe | Copper zinc tin sulfur selenide |
DSSC | Dye-sensitized solar cell |
ETL | Electron transport layer |
Fe | Iron |
FTO | Fluorine-doped tin oxide |
HTL | Hole transport layer |
I (hkℓ) | Net intensity measured by the experimental XRD patterns after the background subtraction. |
I0 (hkℓ) | Relative intensity of the XRD reflection with (hkℓ) Miller |
ITO | Indium tin oxide |
IVD | Injection vapor deposition |
i-ZnO | Intrinsic zinc oxide |
JCPDS | Joint Committee on Powder Diffraction Standards |
Jsc | Short-circuit current density |
J–V | Current density–voltage |
K | Potassium |
KOH | Potassium hydroxide |
La | Lanthanum |
Mg | Magnesium |
MgCl2 | Magnesium chloride |
Mo | Molybdenum |
MoSe2 | Molybdenum(IV) selenide |
MoO3 | Molybdenum trioxide |
Ni | Nickel |
NiOx | Nickel oxide |
NPB | N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine |
P3HT | Poly(3-hexylthiophene-2,5-diyl) |
Pb | Lead |
PbI2 | Lead(II) iodide |
PbSb | Substitutional defect of lead replacing antimony site |
PCE | Power conversion efficiency |
PCBM | [6,6]-Phenyl-C61-butyric acid methyl ester |
PCDTBT | Poly[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′- benzothiadiazole] |
PDT | Physical deposition techniques |
PED | Pulsed electron deposition |
PLD | Pulsed laser deposition |
Pt | Platinum |
PtSe2 | Platinum diselenide |
PV | Photovoltaic |
QDs | Quantum dots |
RF-MS | Radiofrequency magnetron sputtering |
RTE | Rapid thermal evaporation |
S | Sulfur |
SbCl3 | Antimony trichloride |
Se | Selenium |
Sb | Antimony |
SbSe | Substitutional defect of antimony replacing selenium site |
SeSb | Substitutional defect of selenium replacing antimony site |
Sb2Se3 | Antimony triselenide |
SL | Seeding layer |
SLG | Soda–lime glass |
SnO2 | Tin(IV) oxide |
SnS | Tin(II) sulfide |
(SnxSb1−x)2Se3 | Tin-doped antimony selenide |
Spiro-OMeTAD | 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene |
SRH | Shockley–Read–Hall |
TiO2 | Titanium dioxide, titanium(IV) oxide, titania |
TC | Texture coefficient |
t-Se | Trigonal selenium |
VBO | Valence band offset |
Voc | Open-circuit voltage |
VSe | Selenium vacancies |
VTE | Vacuum thermal evaporation |
VTD | Vapor transport deposition |
WO3−x | Tungsten oxide |
WS2 | Tungsten disulfide |
XRD | X-ray diffraction |
ZnO | Zinc oxide |
ZnMgO | Zinc magnesium oxide |
ZnSe | Zinc selenide |
ZTO | Zinc–tin oxide |
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Deposition Method | Substrate/ Underlayer | Σ TC (hkℓ) ℓ ≠ 0 | Observations | PCE | Jsc (mA/cm2) | Reference |
---|---|---|---|---|---|---|
CSS | TiO2/FTO/glass | 86% | With seeding layer | 3.8% | 21.1 | [36] |
CSS | TiO2/FTO/glass | 65.4% | W/o seeding layer | 1.6% | 24.9 | [36] |
CSS | CdS/FTO/glass | 89.5% | CdCl2 treatment | 6.23% | 27.36 | [36] |
CSS | CdS/FTO/glass | 88.1% | // | 4.27% | 21.74 | [21] |
CSS | CdS/FTO/glass | 97.5% | CdS by CCS | 2.82% | 19.5 | [37] |
CSS | TiO2/FTO/glass | ~100% | Seeding layer | 5.28% | 24.6 | [37] |
CSS | TiO2/CdS/FTO/glass | ~100% | // | 2.07% | 15.6 | [37] |
CSS | SnO2/FTO/glass | 58.3% | CdCl2 treatment | // | // | [38] |
CSS | SnO2/FTO/glass | 5.4% | No treatments | // | // | [38] |
CSS | FTO/glass | 92.2% | 330 °C | 9% | 29.8 | [39] |
VTD | SnO2/ITO/glass | 91.4% | // | 2.7% | 19.3 | [40] |
VTD | TiO2/ITO/glass | 30.9% | // | 2% | 23.6 | [40] |
VTD | SnO2/TiO2/ITO/glass | ~100% | // | 4.8% | 25.6 | [40] |
VTD | CdS/TiO2/ITO/glass | 64.7% | CdS-VTD | 4.91% | 28.6 | [41] |
VTD | CdS/TiO2/ITO/glass | 50.1% | CdS-CBD | 4.24% | 28.3 | [41] |
RTE | CdS/FTO/glass | 90.4% | w/o KOH treatment | 4.8% | 28.13 | [26] |
RTE | CdS/FTO/glass | 92.1% | with KOH treatment | 7.16% | // | [26] |
RF sputtering | CdS/FTO/glass | 71.3% | Annealing at 460 °C | 6.06% | 25.91 | [42] |
RF sputtering | FTO/glass | 60% | // | 1.28% | 24.83 | [19] |
RF sputtering | CdS/FTO/glass | 91% | // | 2.36% | 27.06 | [19] |
RF sputtering | Mo | 30% | // | 0.24% | 5.11 | [19] |
PED | FTO/glass | 60.2% | // | 2.1% | 20.3 | [32] |
PED | CdS/FTO/glass | 38.4% | // | // | // | [32] |
PED | Mo | 0.6% | // | // | 0.3 | [32] |
Thermal co-evaporation | Mo | 73.5% | Substrate T = 300 °C | 2.67–4.51% | 19.51 | [43] |
ETL | HTL | PCE | Absorber Deposition Method | Reference |
---|---|---|---|---|
CdS:Al | / | 8.41% | RF-MS + selenization | [67] |
Sb-CdS | SpirOmetad | 6.13% | RTE | [68] |
Cd(S,O) | / | 5.76% | Thermal evaporation | [69] |
CdS:O | MoSe2 | 7.69% | CSS | [70] |
CdS/SnO2 | SpirOmetad | 8% | Hydrothermal | [72] |
CdZnS | / | 6.71% | CSS | [73] |
CdS | / | 5.08% | CSS | [73] |
SnO2 | P3HT | 4.76% | CSS | [74] |
CdS/TiO2/SnO2 | / | 7% | VTD | [40] |
CdS/TiO2 | / | 5.82% | VTD | [80] |
SnO2 | / | 4.03% | VTD | [75] |
La-SnO2 | / | 3.25% | RTE | [76] |
TiO2 (CdCl2 treatment) | SpirOmetad | 6.06% | Thermal evaporation | [77] |
MoO3 | CdS | 6.3% | RTE | [79] Figure 8 |
ZTO | / | 3.44% | Magnetron cosputtering | [81] |
InCl2–In2S3 | SpirOmetad | 5.0% | VTE | [82] |
C60 | NPB | 5.03% | VTE | [83] |
CdS | CuSCN | 7.5% | VTD | [85] |
CdS | WO3−x/ | 7.1% | CSS | [86] |
CdS/TiO2 | MoSe2 | 9.2% | CSS | [25] Figure 5b |
CdS | MoSe2 | 10.12% | IVD | [29] Figure 2d |
CdS:O | / | 7% | CSS | [71] |
CeO2 | / | 5.14% | RTE | [78] |
CdS | NiOx | 6.5% | VTD | [87] |
SnO2/CdS | t-Se | 7.45% | CSS | [34] |
CdS | MoS3 | 6.65% | TE | [88] |
CdS | MoO2 | 8.14% | RF-MS + selenization | [89] |
CdS | CuSbSe2 | 5.87% | VTD | [90] |
CdS | Mo/PbSe | 8.4% | CSS | [91] |
TiO2 | PCDTBT | 6.6% | CSS | [92] |
TiO2 | P3HT | 6.88% | CSS | [93] |
CdS | SpirOmetad | 7.27% | VTD | [94] |
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Jakomin, R.; Rampino, S.; Spaggiari, G.; Pattini, F. Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques. Solar 2023, 3, 566-595. https://doi.org/10.3390/solar3040031
Jakomin R, Rampino S, Spaggiari G, Pattini F. Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques. Solar. 2023; 3(4):566-595. https://doi.org/10.3390/solar3040031
Chicago/Turabian StyleJakomin, Roberto, Stefano Rampino, Giulia Spaggiari, and Francesco Pattini. 2023. "Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques" Solar 3, no. 4: 566-595. https://doi.org/10.3390/solar3040031