Transition Metal (3d,4d,5d) Single-Ion Magnets

Dear Colleagues,

Single-ion magnets (SIMs) are, in theory, the smallest possible components for spin-based electronic devices, among which data storage is one of the most laureate applications. The feasibility of SIMs depends mainly on the correct molecular design focused on two major factors in such a way that the resulting metal-organic systems exhibit: i) large energy barriers that prevent reversal of the magnetization (U_eff), as well as the highest possible blocking temperature (T_B) and ii) ordered structures that distribute spin carriers into addressable arrays. Taking into account that the energy barrier (U_eff) is governed by the magnetic anisotropy of the complex and the spin ground state, transition metals (TM) have proven to be good candidates to give rise to SIMs since, coordinated to adequate ligands, their d orbitals are propitiously split by the field while they are spatially arranged into isolated molecules or 1, 2 and 3-dimensional materials which present interesting structural and physical properties. This Special Issue of the open access journal Magnetochemistry, devoted to SIMs, provides an excellent opportunity for researchers working in the field to publish their most recent discoveries.

Dr. Javier Cepeda
Guest Editor

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• Transition metal ions
• Slow relaxation of the magnetization
• SIMs based on isolated molecules
• SIMs consisting of coordination polymers
• Alternating current (ac) susceptibility