Lai, M.-J.; Chang, Y.-T.; Wang, S.-C.; Huang, S.-F.; Liu, R.-S.; Zhang, X.; Chen, L.-C.; Lin, R.-M.
Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer. Molecules 2022, 27, 7596.
https://doi.org/10.3390/molecules27217596
AMA Style
Lai M-J, Chang Y-T, Wang S-C, Huang S-F, Liu R-S, Zhang X, Chen L-C, Lin R-M.
Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer. Molecules. 2022; 27(21):7596.
https://doi.org/10.3390/molecules27217596
Chicago/Turabian Style
Lai, Mu-Jen, Yi-Tsung Chang, Shu-Chang Wang, Shiang-Fu Huang, Rui-Sen Liu, Xiong Zhang, Lung-Chien Chen, and Ray-Ming Lin.
2022. "Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer" Molecules 27, no. 21: 7596.
https://doi.org/10.3390/molecules27217596
APA Style
Lai, M.-J., Chang, Y.-T., Wang, S.-C., Huang, S.-F., Liu, R.-S., Zhang, X., Chen, L.-C., & Lin, R.-M.
(2022). Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer. Molecules, 27(21), 7596.
https://doi.org/10.3390/molecules27217596