Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1−x)0.5In0.5P/n+-GaAs Epifilms
Abstract
:1. Introduction
2. Results and Discussions
2.1. Energy Bandgap by Photoluminescence
2.1.1. Temperature-Dependent Energy Bandgap
2.1.2. Composition-Dependent Energy Bandgap
2.2. Optical Phonons by Raman Scattering Spectroscopy
2.3. Optical Phonons by Far-Infrared Spectroscopy
2.4. Simulation of Reflectivity Spectra in the FIR Region
2.5. Analysis of Optical Spectra for Quaternary Alloys
2.5.1. Dielectric Function in the NIR → UV Energy Region
2.5.2. Transfer Matrix Method
2.5.3. Optical Constants in NIR → UV Region for (AlxGa1−x)0.5In0.5P
2.5.4. Thickness-Dependent Reflectivity and Transmission Spectra
3. Material Growth and Characterization Methods
3.1. MOCVD Growth of (AlxGa1−x)0.5In0.5P/n+-GaAs
3.2. Photoluminescence
3.3. Raman Scattering
3.4. Infrared Spectroscopy
4. Concluding Remarks
Author Contributions
Funding
Institutional Review Board Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Samples | d (μm) | η | μ | m*/me | Pressure Torr τ | H2 Flow Rate (slm) | Dopant |
---|---|---|---|---|---|---|---|
T1 | 0.98 | 0.91 | 596.17 | 0.13 | 35 | 85 | Si |
T2 | 1.1 | 1.03 | 664.74 | 0.13 | 55 | 85 | Si |
T3 | 0.85 | 2.59 | 321.38 | 0.13 | 55 | 120 | Te |
T4 | 1.08 | ~0.01 | 672.29 | 0.13 | 70 | 85 |
Samples | d (μm) | GaA-like | InP-like | GaP-like | AlP-like | |||
---|---|---|---|---|---|---|---|---|
T1 | 0.98 | 268.5 | 330.3 | 365.0 | - | 375.2 | - | 453.0 |
T2 | 1.1 | 269.1 | 329.9 | 365.1 | - | 385.0 | - | 465.0 |
T3 | 0.85 | 269.0 | 329.8 | 365.3 | - | 371.3 | - | 441.0 |
T4 | 1.08 | 268.7 | 330.2 | 365.3 | - | 386.1 | - | 455.0 |
Samples | d (μm) | GaAs-like | InP-like | GaP-like | AlP-like |
---|---|---|---|---|---|
T1 | 0.98 | 268.7 | 335.3 | 372.3 | 422.3 |
T2 | 1.1 | 269.2 | 335.2 | 375.2 | 422.4 |
T3 | 0.85 | 269.0 | 335.1 | 365.3 | 422.3 |
T4 | 1.08 | 268.4 | 324.2 | 390.1 | 418.1 |
(A) | ||
(Ga1−xAlx)0.5In0.5P/n+GaAs Parameters x = 0.24 | Sample T1 | |
ε∞ | 8.81 | |
InP-like mode | S1 | 1.76 |
(cm−1) | 335.57 | |
γ1 (cm−1) | 16.28 | |
GaP-like mode | S2 | 0.11 |
(cm−1) | 372.34 | |
γ2 (cm−1) | 4.30 | |
AlP-like mode | S3 | 0.31 |
(cm−1) | 422.30 | |
γ3 (cm−1) | 23.22 | |
(B) | ||
n+ GaAsSubstrate300 K | ||
ε∞ | 10.89 | |
S | 4.53 | |
(cm−1) | 268.51 | |
γ (cm−1) | 5.05 | |
Carrier concentration (1018 cm−3) | 1.14 | |
Mobility (cm2/Vs) | 1383.12 | |
Effective mass (m*/me) | 0.063 |
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Talwar, D.N.; Feng, Z.C. Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1−x)0.5In0.5P/n+-GaAs Epifilms. Molecules 2024, 29, 4188. https://doi.org/10.3390/molecules29174188
Talwar DN, Feng ZC. Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1−x)0.5In0.5P/n+-GaAs Epifilms. Molecules. 2024; 29(17):4188. https://doi.org/10.3390/molecules29174188
Chicago/Turabian StyleTalwar, Devki N., and Zhe Chuan Feng. 2024. "Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1−x)0.5In0.5P/n+-GaAs Epifilms" Molecules 29, no. 17: 4188. https://doi.org/10.3390/molecules29174188