1. Introduction
The extraordinary electrical properties of graphene, characterized by its high carrier mobility and conductivity, have driven exploration of applications in nanoelectronic devices [
1,
2], including biosensors. Graphene field-effect transistors (G-FET), in particular, have been extensively explored as a promising platform for bio-species detection [
3]. The existence of infectious pathogens such as bacteria is correlated with human foodborne diseases. There are two major considerations for the design and operation of a G-FET based biosensor. First, an aqueous solution is necessary to provide the liquid condition for the operation of G-FET biosensors. Over the past several years, most of the reports on graphene field-effect transistors have addressed operation under vacuum or atmospheric conditions. Recently, the operation of graphene in aqueous electrolytes, for potential use in biosensors and bioelectronics, has been reported [
4,
5]. The use of solution-gated epitaxial graphene as a pH sensor was first demonstrated by Loh et al. [
4]. Ohno et al. then reported electrolyte-gated graphene field-effect transistors for detecting pH and protein adsorption [
5]. Second, it is necessary to functionalize the graphene surface to introduce the sensing probe needed for biosensing. The surface functionalization of graphene with aromatic molecules in different organic solvents has been studied by analyzing their influence on the carrier mobility of graphene, which helps to select proper solvents [
6]. Moreover, functionalization of graphene with sensing probes equips the biosensors with the specific detection ability. In previous studies, graphene was functionalized with antibodies, aptamers, or nanoparticles acting as the sensing probe to develop biosensors with high selectivity and sensitivity [
7,
8]. Although excellent performance has been achieved experimentally, understanding the G-FET operation is key to further development and optimization for various applications.
There have been a few reports on modeling and simulation of FET-based biosensors. The Incremental Support Vector Regression (ISVR) algorithm was employed to study the aptamer-modified G-FETs for interferon-gamma (IFN-γ) detection, in which the change of Dirac voltage and the shift of transfer characteristics were mathematically modelled and simulated [
9]. Recently, the simulation of G-FETs for DNA hybridization has attracted some attention [
10,
11]. A graphene-solution interface capacitance model was developed to analyze the change in graphene-solution quantum capacitance (
Cq) when DNA hybridization occurred on the graphene surface, with results yielding more than 97% accuracy [
10]. Another model on the DNA adsorption on the graphene surface used particle swarm optimization (PSO), where the graphene surface was modified by single-stranded DNA (ssDNA) and then the source-drain current (
Ids) was simulated when the graphene biosensor was exposed to the complementary DNA [
11].
Previously, we have demonstrated G-FETs for
Escherichia coli (
E. coli) detection by using antibody [
12] or aptamer [
13] sensing probes, showing
E. coli concentration-dependent electrical response. More importantly, the biosensors exhibited rapid detection of
E. coli, with a response time of about 120 s. Here, the motion of
E. coli cells in solution and the surface charge of graphene induced by
E. coli are modeled and simulated with COMSOL Multiphysics to interpret the operation of graphene biosensors. The size of the sensing probe proves to be the important factor affecting the efficiency of the induced charges on the graphene surface; the smaller-sized sensing probe affords more efficient induced charges on the graphene surface. Additionally, the relationship between the bacterial concentration and the electrical current of the graphene biosensor is established in this work, showing that higher bacterial concentration gives rise to larger electrical response (larger source-drain current, ∆
Ids), and the saturation is correlated with the active sensing size of graphene and the bacterial size. The simulation of the G-FET biosensors here could help to understand their operation and pave the way to designing and optimizing new biosensors with better sensing performance.
4. Change of Source-Drain Current vs. Bacterial Concentration
Based on the simulation results of bacterial motion and the hole carriers induced by single
E. coli cell, we calculated the source-drain current change (∆
Ids) when the graphene device was exposed to various concentrations of
E. coli. As discussed above, the source-current modulation is expressed as a function of the change in the carrier density (∆
N) in the graphene channel, which is proportional to the number of targets attached on the graphene surface [
13]:
where
w is the width of the graphene channel;
l is the length of the graphene channel;
e is elementary charge (1.602 × 10
−19 C);
µ is the carrier mobility;
Vds is the source-drain voltage.
The binding of the negatively charged
E. coli induces more holes in the graphene channel. Based on Equation (13), the net change in source-drain current (∆
Ids) caused by
E. coli was evaluated at the given
Vg (0.04 V) and
Vds (0.05 V). The carrier mobility (1030.99 cm
2/V·s) for the source-drain current calculation was obtained from our previous experimental results [
13]. Several factors could affect the carrier mobility of a graphene device including the substrate, temperature, charged impurities, defects on graphene film and graphene-metal contact [
22]. Substrates that possess a similar lattice constant to graphene and an atomically flat surface are ideal for preserving the intrinsic carrier mobility of graphene. The mobility will be reduced by increasing the temperature due to the increased scattering that depends on the acoustic phonons. Charged impurities and vacancies on graphene will cause Coulomb scattering and short-range scattering, respectively. Both factors will reduce the carrier mobility of graphene. Non-ohmic graphene-metal contact will damage carrier injection, which will also reduce the carrier mobility of the graphene device. Considering these factors, the substrate, temperature and graphene-metal contact were kept stable during our experiments. Only the attachment of charged impurities (namely bacterial particles) might affect the carrier mobility of G-FET, here. However, the bacterial particles were captured by the sensing probes (antibody or aptamer) on the graphene surface, which could screen the scattering effect from bacterial particles. Moreover, since the total detection time is about 10 min in our experiments, the reduction of carrier mobility of graphene is negligible within such a short time. The comparison of transfer curves before and after exposure to high concentration of bacterial solution and the estimation of carrier mobility were further performed to prove this assumption. Analysis of the slopes of the transfer characteristics before and after addition of bacterial solution (10
6 CFU/mL) reveals (
Figure S2) negligible changes (Detailed information can be found in supporting information). Thus, a fixed carrier mobility was used in the calculations.
As shown in
Figure 9a, when the simulation was performed with 100
E. coli particles in the solution, both the number of bacteria on the graphene surface and ∆
Ids exhibited time-dependent change. The number of bacteria attached onto the graphene surface increased slowly from 0 to 30 s, with faster increase from 40 to 120 s. Most
E. coli particles (91) reached the graphene surface by 120 s. This behavior can be explained as follows. The bacterial motion in solution is affected by the gravitational force, Brownian force, drag force and swimming force in the first 30 s. When the
E. coli particles are close to the graphene surface, the binding force between the sensing probe and bacteria could dominate the motion of
E. coli, causing the number of bacteria on the graphene surface to increase fast. Accordingly, the ∆
Ids increases gradually, which is consistent with the change of the number of bacteria on the graphene surface. The simulated ∆
Ids is smaller than the experimental result as shown in
Figure 9b, which may be due to the number of bacteria attached onto the graphene surface being larger in the experiment than that in the simulation. Moreover, a negative peak is seen in the first several seconds in
Figure 9b, which is attributed to the disturbance from the addition of bacterial solution. This disturbance could cause the bacterial particles to reach the graphene surface in a shorter time; therefore, the obvious increase of the ∆
Ids in the first several seconds in the experiment.
As shown in
Figure 9c, for the simulation with a higher concentration of
E. coli (11,950
E. coli particles in the solution), a slow increase in the number of bacterial particles on the graphene surface is seen in the first 8 s, followed by a much faster increase until 30 s, affected by the binding force. The rate is slower again from 30 to 90 s with saturation happening afterwards until 120 s. Accordingly, the calculated ∆
Ids is consistent with the change in the number of bacteria on the graphene surface. Similarly, a negative peak is observed in the first several seconds, and the simulated ∆
Ids is smaller than the experimental value, as shown in
Figure 9d, which is attributed to the disturbance from the addition of bacterial solution and the larger number of bacteria reaching the graphene surface in the experiment. This simulation also suggests that the ∆
Ids could reach saturation rapidly with the addition of high concentration of bacterial particles (larger than 11,950 particles) to the electrolyte.
We then compare the slope of the simulated and experimental current vs. time curve as shown in
Table S1. The rise period is defined in
Figure 9. The first 30 s of simulation was different from that of the experiment. The source-drain current in the simulation increased slightly during the first 30 s, which is ascribed to the slight increase of bacterial number on graphene surface. However, in the experiment, the addition of bacterial solution was performed by pipetting, which could cause a disturbance to the bacterial motion in the solution as the bacterial solution was squeezed from the pipette tip. Therefore, the slopes of the simulated and experimental current vs. time curve have some differences. The signal response is fast in the experiment work for low concentration (10
2 CFU/mL), indicated by the slope value in the first rise period. The larger value from the experiment is attributed to more particles reaching the graphene surface in the experiment. At high concentration (11,950 CFU/mL), the slopes in different rise periods from the experiment and simulation are at the same level, except for a slow increase of the ∆
Ids within a very short rise period. For the first rise period (0–30 s) and the second period (31–90 s), the slopes from the simulation and experiment are of the same order. The above analysis on the slope suggests that the simulation fits the experiment well. Additionally, a 2-stage response can be found in both low- and high-concentration cases.
Next, we discuss the
E. coli concentration-dependent ∆
Ids and compare the simulation and experiment results.
Figure 10 shows the ∆
Ids of both the antibody-modified and aptamer-modified G-FETs for different concentrations of
E. coli solution. According to the simulation results, the number of
E. coli cells reaching the graphene surface is about 10,000 CFU/mL with the addition of 11,950 CFU/mL
E. coli. When the graphene channel is completely occupied by
E. coli and all these
E. coli cells could induce holes in the graphene channel, only about 10,000
E. coli cells could attach to the surface of graphene, even when adding a higher concentration of
E. coli solution. When higher concentration of
E. coli (10
5 and 10
6 CFU/mL) is added, the number of
E. coli reaching the graphene surface is still 10,000 CFU/mL, implying the attainment of saturation. As shown in
Figure 10a, for the antibody-modified G-FET, the ∆
Ids obtained from the experiment (red line,
n = 5) is slightly smaller than that of the simulation result (black line). Some antibody molecules may lose their bio-activities, resulting in a smaller electrical response. The saturation of the source-drain current for the aptamer-modified G-FET happens with the addition of 11,950 CFU/mL
E. coli (black line in
Figure 10b). The electrical response from the experiment (red line,
n = 5) is similar as in the simulation results. However, the value of ∆
Ids is larger in the simulation because of the use of
E. coli K12 as the target in the simulation, in contrast to
E. coli 8739 as the target in the aptamer-related experiment. We assumed that
E. coli 8739 might carry more surface charge than
E. coli K12. To date, there is no report on the surface charge of
E. coli 8739. Therefore, we calculated the value of the positive charge induced by single
E. coli 8739 cell. When the simulation results were consistent with those of the experiment, the value might be about 2062. By using Equation (12), the surface charge of
E. coli 8739 was evaluated as ~−3.59 × 10
−16 C. Based on the experiment and the simulation results, the surface charge properties of the target could be evaluated.
Although there are some gaps between the experiment results and the simulation, the simulation results still give us a deeper understanding of the operation of G-FET biosensors designed for high performance and provide a reference for evaluating the sensing performance.
Figure 11 shows a color map of the value of the source-drain current change for different graphene-bacteria distance and
E. coli concentration. Smaller graphene-bacteria distances (smaller height of the sensing probe) and higher bacterial concentrations give larger source-drain current change. Overall, this study provides a comprehensive understanding of the target motion in the electrolyte and surface charge induced by the target (
E. coli). The established relationship between the source-drain current and graphene-bacterial distance here could help to design new graphene biosensors with excellent sensing performance. Since G-FETs are a material-specific subset of bio field effect transistors (BioFETs) with silicon and other materials serving as channels [
23,
24], the present modeling study would benefit BioFET design in general for various applications.