Recent Progress in Gas Sensors Based on P3HT Polymer Field-Effect Transistors
Abstract
:1. Introduction
2. Polymer Field-Effect Transistors (PFETs)
2.1. Classification and Working Mechanism of PFETs
2.2. Conjugated Polymers
2.3. Crystallisation and Orientation Regulation
3. Application of P3HT in Gas Detection
3.1. P3HT Nanowire Structure in Gas Detection
3.1.1. Preparation of P3HT Nanowires by Photoinduction and Solvent Evaporation
3.1.2. P3HT Nanowires Prepared by External Environment Control Method
3.2. P3HT Nanoporous Structure in Gas Detection
3.2.1. P3HT Nanoporous Structures Prepared by Photolithography and Spin Coating
3.2.2. The Pore Structure of P3HT Prepared by Respiration Pattern and Doping Method
4. Conclusions and Future Outlook
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Materials | Analytes | Property | Device | Reference |
---|---|---|---|---|
P3HT nanowires | NH3 | 5 ppm | BGTC | [44] |
P3HT nanowires | NH3 | 25 ppm | BGTC | [47] |
P3HT nanowires | NH3 | 11.58 ppm | BGTC | [53] |
P3HT nanowires | NO2 | 38.2% | BGTC | [55] |
P3HT nanopores | NH3 | 100 ppb | BGTC | [64] |
P3HT nanopores | NH3 | 70.7% | TGTC | [65] |
P3HT nanopores | Acetone | 3.5 pm | TGTC | [66] |
P3HT nanopores | NO2 | 0.7 ppb | BGTC | [67] |
P3HT nanopores | NO2 | 100 ppb | BGTC | [68] |
P3HT nanopores | NH3 | 2.45 ppb | BGTC | [71] |
P3HT nanopores | NO | 0.5 ppm | BGTC | [72] |
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Cheng, S.; Wang, Y.; Zhang, R.; Wang, H.; Sun, C.; Wang, T. Recent Progress in Gas Sensors Based on P3HT Polymer Field-Effect Transistors. Sensors 2023, 23, 8309. https://doi.org/10.3390/s23198309
Cheng S, Wang Y, Zhang R, Wang H, Sun C, Wang T. Recent Progress in Gas Sensors Based on P3HT Polymer Field-Effect Transistors. Sensors. 2023; 23(19):8309. https://doi.org/10.3390/s23198309
Chicago/Turabian StyleCheng, Si, Yifan Wang, Ruishi Zhang, Hongjiao Wang, Chenfang Sun, and Tie Wang. 2023. "Recent Progress in Gas Sensors Based on P3HT Polymer Field-Effect Transistors" Sensors 23, no. 19: 8309. https://doi.org/10.3390/s23198309