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Article

The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer

by
Miloš Marjanović
1,*,
Stefan D. Ilić
2,
Sandra Veljković
1,
Nikola Mitrović
1,
Umutcan Gurer
3,
Ozan Yilmaz
3,
Aysegul Kahraman
4,
Aliekber Aktag
3,
Huseyin Karacali
3,
Erhan Budak
3,
Danijel Danković
1,
Goran Ristić
1 and
Ercan Yilmaz
3
1
Department of Microelectronics, Faculty of Electronic Engineering, University of Niš, 18000 Niš, Serbia
2
Center of Microelectronic Technologies, Institute of Chemistry, Technology and Metallurgy, University of Belgrade, 11000 Belgrade, Serbia
3
Faculty of Arts and Sciences, Bolu Abant Izzet Baysal University, 14280 Bolu, Turkey
4
Department of Physics, Faculty of Arts and Sciences, Bursa Uludag University, 16059 Bursa, Turkey
*
Author to whom correspondence should be addressed.
Sensors 2025, 25(2), 546; https://doi.org/10.3390/s25020546
Submission received: 18 December 2024 / Revised: 10 January 2025 / Accepted: 17 January 2025 / Published: 18 January 2025
(This article belongs to the Special Issue Semiconductor Radiation Detectors: Sensors, Readout Electronics and Applications)
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Abstract

We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO2/SiO2 double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO2, are enhanced by incorporating high-k dielectric materials such as HfO2 to reduce oxide thickness in modern radiation sensors. The fabrication steps of the sensor are outlined, and model parameters, including the threshold voltage and transconductance, are extracted based on experimental data. Experimental setups for measuring electrical characteristics and irradiation are described, and a method for determining model parameters dependent on the accumulated dose is provided. A SPICE model card is proposed, including parameters for two dielectric thicknesses: (30/10) nm and (40/5) nm. The sensitivities of the sensors are 1.685 mV/Gy and 0.78 mV/Gy, respectively. The model is calibrated for doses up to 20 Gy, and good agreement between experimental and simulation results validates the proposed model.
Keywords: SPICE model; RADFET; high-k materials; radiation sensor; electrical simulation SPICE model; RADFET; high-k materials; radiation sensor; electrical simulation

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MDPI and ACS Style

Marjanović, M.; Ilić, S.D.; Veljković, S.; Mitrović, N.; Gurer, U.; Yilmaz, O.; Kahraman, A.; Aktag, A.; Karacali, H.; Budak, E.; et al. The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer. Sensors 2025, 25, 546. https://doi.org/10.3390/s25020546

AMA Style

Marjanović M, Ilić SD, Veljković S, Mitrović N, Gurer U, Yilmaz O, Kahraman A, Aktag A, Karacali H, Budak E, et al. The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer. Sensors. 2025; 25(2):546. https://doi.org/10.3390/s25020546

Chicago/Turabian Style

Marjanović, Miloš, Stefan D. Ilić, Sandra Veljković, Nikola Mitrović, Umutcan Gurer, Ozan Yilmaz, Aysegul Kahraman, Aliekber Aktag, Huseyin Karacali, Erhan Budak, and et al. 2025. "The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer" Sensors 25, no. 2: 546. https://doi.org/10.3390/s25020546

APA Style

Marjanović, M., Ilić, S. D., Veljković, S., Mitrović, N., Gurer, U., Yilmaz, O., Kahraman, A., Aktag, A., Karacali, H., Budak, E., Danković, D., Ristić, G., & Yilmaz, E. (2025). The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer. Sensors, 25(2), 546. https://doi.org/10.3390/s25020546

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