Fayyaz, A.; Romano, G.; Urresti, J.; Riccio, M.; Castellazzi, A.; Irace, A.; Wright, N.
A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs. Energies 2017, 10, 452.
https://doi.org/10.3390/en10040452
AMA Style
Fayyaz A, Romano G, Urresti J, Riccio M, Castellazzi A, Irace A, Wright N.
A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs. Energies. 2017; 10(4):452.
https://doi.org/10.3390/en10040452
Chicago/Turabian Style
Fayyaz, Asad, Gianpaolo Romano, Jesus Urresti, Michele Riccio, Alberto Castellazzi, Andrea Irace, and Nick Wright.
2017. "A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs" Energies 10, no. 4: 452.
https://doi.org/10.3390/en10040452
APA Style
Fayyaz, A., Romano, G., Urresti, J., Riccio, M., Castellazzi, A., Irace, A., & Wright, N.
(2017). A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs. Energies, 10(4), 452.
https://doi.org/10.3390/en10040452