1. Introduction
Nowadays, facing the increasingly severe energy crisis and pollution issues, considerable attention is being focused on renewable power sources to figure out promising solutions [
1,
2,
3]. However, owing to the time-varying and intermittent output features of some renewable sources, energy storage plays an indispensable role to improve the stability and energy utilization rate of the distributed energy generation system (DEGS) [
4,
5,
6]. In existing DEGS, the renewable energy sources, storage units and loads are connected together by their independent converters. Therefore, the large number of converters leads to complexity in the DEGS architecture. This issue is addressed by adopting three-port converters, where the efficiency, the cost and the power density are optimized. As a consequence, three-port bidirectional DC-DC converters (TP-BDCs) have become a competitive alternative in recent years.
Based on the connections, the TP-BDCs are simply categorized into three types, namely the non-isolated, the partly-isolated and the isolated converters [
7]. For the non-isolated topology, although the direct connection is beneficial for its reduced number of components and compact architecture, this kind of TP-BDC suffers from limited voltage gain, since the voltage conversion ratio can only be adjusted by controlling the duty-ratio of switches [
8,
9,
10]. In the partly-isolated structures, a transformer is used to isolate one port from the other two ports. Owing to the added transformer, is easier to obtain higher voltage gain with the partly-isolated TP-BDC [
11,
12,
13,
14]. However, neither non-isolated or partly-isolated TP-BDCs are suitable for applications where the three ports must be completely isolated. Therefore, it is necessary to consider the isolated-type TP-BDC [
15,
16].
The isolated TP-BDC exhibits pronounced advantages over its two counterparts, since the three-port power exchanges are realized through a three-winding high-frequency transformer, and the completely galvanic isolation is also ensured. Furtherly, among the numerous previously published references [
17,
18,
19,
20,
21,
22,
23,
24] about isolated TP-BDCs, two more detailed main sub-classifications are used: the triple-active-bridge (TAB) converter shown in
Figure 1a and the series-resonant TP-BDC (SR-TP-BDC) in
Figure 1b.
The TAB converter, a research hotspot, is composed of three active bridges, three inductors and a three-winding transformer [
17,
18,
19,
20,
21]. It possesses advantages such as galvanic isolation, bidirectional power flow, ZVS operation and phase shift control with fixed switching frequency, while the power coupling among the three ports makes the decoupling matrix essential in its control loop, which is sophisticated and can be detrimental to the reliability of TAB. Moreover, the power transmission in TAB topology is in inverse proportion of the impedance of
L1–
L3, and
L1–
L3 are inherent greater than the leakage inductors of transformer. Consequently, the switching frequency has to be reduced in case of high power levels. In [
19,
20,
21] the driving frequencies are all 20 kHz, and this will be detrimental for the desired high power density.
The other sub-classification is the series-resonant TP-BDC (SR-TP-BDC) as
Figure 1b shows. Compared to TAB, the SR-TP-BDC introduces two additional series-resonant tanks into the primary sides. For one thing, it maintains the main advantages of TAB such as galvanic isolation, bidirectional operation, ZVS features and constant switching frequency [
22,
23,
24]. For another, the decoupling of the power transmissions successfully relieves the difficulty of control issue. Additionally, another benefit of SR-TP-BDC is that the impedance of SR tanks can be regulated by
Cr1,
Lr1,
Cr2,
Lr2 and the driving frequency together, thus, it can operate with a higher switching frequency with realizable component values under high power level. In [
23,
24], renewable source, battery and load are integrated to a three-port SR BDC. The driving frequency rises to 100 kHz, which is apparently higher than 20 kHz of TAB [
19,
20,
21].
In spite of the benefits discussed above, the SR-TP-BDC still needs to be modified due to the loss of ZVS at light load. Since the phase shift angle is small under light load conditions, the energy stored in the series-resonant tanks is unable to fully discharge the switches’ output capacitors. In order to improve the operating characteristics of series resonant converter under light load conditions, many studies have been conducted [
25,
26,
27,
28,
29,
30]. In [
29], an additional capacitor is added to the resonant storage to solve the regulation problem in which the output voltage increases as the load current decreases. Moreover, all the advantages of typical inductor-inductor-capacitor (LLC) series-resonant converter (SRC) are maintained in this article. In [
30], additional unidirectional switch and pulse width modulation (PWM) are introduced to the traditional half-bridge SRC to limit the operating frequency under light load. Then the light-load efficiency is elevated as the following result. Nevertheless, both these methods mentioned above are based on the single input and single output converter with frequency modulation method (PFM), and cannot extend to the application of TP-BDCs with the phase shift control method. Another serious drawback of SR-TP-BDC is that the series-resonant storage can only transfer the fundamental power, while the higher order harmonic power, inducing the reactive power, will bring in circulating power and hence sacrifices the nominal efficiency.
To alleviate the aforementioned drawbacks, a novel isolated multi-resonant TP-BDC (MR-TP-BDC) is developed in this article. The LCLC resonant storage exploited in this article has three resonant frequencies, namely a 2nd harmonic parallel resonant frequency and two series resonant frequencies. These two series resonant points, arranged 1st and 3rd, respectively, guarantee the active power deliveries for the fundamental and the third order, by which the circulating energy is constrained. Besides, through properly adjusting the operating frequency for diverse load states, the proposed MR-TP-BDC obtains the fruitful ZVS traits for all the switches of the three ports among whole load range. Finally, a prototype platform is fabricated to verify the theoretical analyses. The article is organized as followings: the operating principles of the proposed converter is given in
Section 2. The steady-state analysis is introduced in
Section 3. Parameters optimization design is presented in
Section 4. Finally, the experimental results are presented in
Section 5, and the conclusion is drawn in
Section 6. The features of the proposed isolated MR-TP-BDC are:
- (1)
The three-port power exchanges are multi-directional, and the centralized phase shift control method is utilized to manage the power flows.
- (2)
The transportation of the extra 3rd power contributes to the reduced circulating power.
- (3)
ZVS characteristics of all switches in the three ports are guaranteed within the whole load range.
- (4)
The proposed converter is proved to have high efficiency among entire load range. High efficiencies of over 95.5% is acquired for bidirectional operation on the condition that the power level is above 0.5 kW. Meanwhile, the highest efficiencies of the forward and reverse modes are 96.7% and 96.9% respectively.
2. Operating Principle of the Proposed Converter
The proposed MR-TP-BDC is presented in
Figure 2, and it is made up of four main parts including a three-winding transformer, three full bridges, two MR tanks and three filter capacitors
CF1–
CF3. Phase shift control method is implemented, the amount and direction of transmitted power is controlled by the phase shift angles. Two switches of the same bridge leg conduct complementarily with fixed duty ratio of 50%. The operating frequency
fs is above the resonant frequency of MR tanks to ensure the converter works only in continuous current mode.
To simplify the analysis, we assume the voltages of three ports to be constant dc. Therefore, vT1, vT2 and vT3 are square-waves with amplitudes of ±V1, ±V2 and ±V3, respectively. The phase shift angles of port 1 and 2 are defined as ϕ13 and ϕ23, and they control the phase shifts among the square wave outputs of the three active bridges. ϕ13 and ϕ23 are defined as positive if vT1 and vT2 lead vT3, and conversely, ϕ13 and ϕ23 are considered negative.
The MR tanks are made up of CR, LR, CP and LP, and in order to simplify the parameter design, resonant parameters of port 1 and 2 are set identical. The MR tanks have two series resonant frequencies (SRFs), which are defined as fr and fr3 respectively, and a notch resonant frequency (NRF) fr2. The first SRF fr helps to deliver the fundamental component energy. To avoid additional power circulation, NRF should de designed at even times of the nominal resonant frequency fr, and 2fr is selected. The second SRF, placed at 3fr, ensures the transfer of the 3rd harmonic power and thus shows significance on circulating energy reduction and efficiency saving.
The parameters are defined as follows:
V1-
V3 are the voltages of three ports,
vT1–
vT3 are the voltages of the square wave outputs of three active bridges,
i1–
i3 are the currents of three ports,
iT1–
iT3 are the resonant currents of three ports,
iP1–
iP3 are the currents of three full bridges;
vCR1–
vCR2 are the voltages of
CR1 and
CR2;
vCP1–
vCP2 are the voltages
CP1 and
CP2;
iLP1–
iLP2 are the currents of
LP1 and
LP2 and
P1–
P3 are the power of three ports. The positive direction of each value is shown in
Figure 2.
Limited by the length of the article, only the operating principle for a certain case is presented, for instance, where the power flows from port 1 and 2 to port 3. In this condition,
ϕ13 >
ϕ23 > 0, and the theoretical waveforms are as shown in
Figure 3.
The dead time is taken into consideration, while the short intervals of the charging and discharging of switches’ parasitic output capacitors are neglected. Totally, there are 12 different intervals existing in one switching cycle, and the equivalent circuits of each stage are shown in
Figure 4:
Stage 1 (
t0–
t1): This interval begins at the
t0 when S
2 and S
3 are turned off, and it is dead time of port 1. During this interval, S
6 and S
7, S
10 and S
11 are on. Since
iT1 is negative, it flows through D
s1 and D
s4, the anti-parallel diodes of S
1 and S
4.
iT2 flows through S
6 and S
7,
iT3 flows through S
10 and S
11. The current flow paths and directions of three ports are shown in
Figure 4a. This stage ends at
t1, when S
1 and S
4 are turned on.
Stage 2 (
t1–
t2): During this stage, S
1 and S
4, S
6 and S
7, S
10 and S
11 are on.
iT1,
iT2 and
iT3 flow through S
1 and S
4, S
6 and S
7, S
10 and S
11 respectively, as shown in
Figure 4b. D
s1 and D
s4 conduct prior to the main switches of S
1 and S
4, thus, S
1 and S
4 are turned on with ZVS. This stage ends at
t2, when S
6 and S
7 are turned off.
Stage 3 (
t2–
t3): This stage is dead time of port 2, S
1 and S
4, S
10 and S
11 are on.
iT1 and
iT3 flow through S
1 and S
4, S
10 and S
11 respectively.
iT2 is negative, so
iT2 flows through the anti-parallel diodes of S
5 and S
8. The current flow paths and directions of three ports are shown in
Figure 4c, while the current directions of port 1 and 3 change in this interval, so only the current paths of
iT1 and
iT3 are given. This interval ends at
t3, when S
5 and S
8 are turned on.
Stage 4 (
t3–
t4): During this stage, S
1 and S
4, S
5 and S
8, S
10 and S
11 are on.
iT1,
iT2 and
iT3 flow through S
1 and S
4, S
5 and S
8, S
10 and S
11 respectively. D
s5 and D
s8 conduct prior to the main switches of S
5 and S
8, thus, S
5 and S
8 are turned on with ZVS. The operating states of three ports are shown in
Figure 4d. In this stage the direction of
iT2 changes, so only the current path of port 2 are given. This stage ends at
t4, when S
10 and S
11 are turned off.
Stage 5 (
t4–
t5): During this stage, S
1 and S
4, S
5 and S
8 are on, and this interval is dead time of port 3.
iT1 and
iT2 flow through S
1 and S
4, S
5 and S
8 respectively.
iT3 is positive, so it flows through the anti-parallel diodes of S
9 and S
12. The operating states of three ports are shown in
Figure 4e. This interval ends at
t5, when S
9 and S
12 are turned on.
Stage 6 (
t5–
t6): During this stage, S
1 and S
4, S
5 and S
8, S
9 and S
12 are on. As shown in
Figure 4f,
iT1,
iT2 and
iT3 flow through S
1 and S
4, S
5 and S
8, S
9 and S
12 respectively. D
s9 and D
s12 conduct prior to the main switches of S
9 and S
12, thus, S
9 and S
12 are turned on with ZVS. This stage ends at
t6, when S
1 and S
4 are turned off.
Stage 7 (
t6–
t7): This stage is dead time of port 1. During this interval, S
5 and S
8, S
9 and S
12 are on. Since
iT1 is positive, it flows through D
s2 and D
s3, the anti-parallel diodes of S
2 and S
3.
iT2 flows through S
5 and S
8,
iT3 flows through S
9 and S
12. The current flow paths and directions of three ports are shown in
Figure 4g. This stage ends at
t7, when S
2 and S
3 are turned on.
Stage 8 (
t7–
t8): During this stage, S
2 and S
3, S
5 and S
8, S
9 and S
12 are on. As shown in
Figure 4h,
iT1,
iT2 and
iT3 flow through S
2 and S
3, S
5 and S
8, S
9 and S
12 respectively. D
s2 and D
s3 conduct prior to the main switches of S
2 and S
3, thus, S
2 and S
3 are turned on with ZVS. This stage ends at
t8, when S
5 and S
8 are turned off.
Stage 9 (
t8–
t9): This stage is dead time of port 2. During this interval, S
2 and S
3, S
9 and S
12 are on. Since
iT2 is positive, it flows through D
s6 and D
s7, the anti-parallel diodes of S
6 and S
7.
iT1 flows through S
2 and S
3,
iT3 flows through S
9 and S
12. The operating states of three ports are shown in
Figure 4i, while the current directions of port 1 and 3 change in this interval, so only the current paths of
iT1 and
iT3 are given. This interval ends at
t9, when S
6 and S
7 are turned on.
Stage 10 (
t9–
t10): During this stage, S
2 and S
3, S
6 and S
7, S
9 and S
12 are on. As shown in
Figure 4j,
iT1,
iT2 and
iT3 flow through S
2 and S
3, S
6 and S
7, S
9 and S
12 respectively. In this stage the direction of
iT2 changes, so only the current path of port 2 is given. D
s6 and D
s7 conduct prior to the main switches of S
6 and S
7, thus, S
6 and S
7 are turned on with ZVS. This stage ends at
t10, when S
9 and S
12 are turned off.
Stage 11 (
t10–
t11): This stage is dead time of port 3. During this interval, S
2 and S
3, S
6 and S
7 are on. Since
iT3 is negative, it flows through D
s10 and D
s11, the anti-parallel diodes of S
10 and S
11.
iT1 flows through S
2 and S
3,
iT2 flows through S
6 and S
7. The operating states of three ports are shown in
Figure 4k. This interval ends at
t11, when S
10 and S
11 are turned on.
Stage 12 (
t11–
t12): During this stage, S
2 and S
3, S
6 and S
7, S
10 and S
11 are on. As shown in
Figure 4l,
iT1,
iT2 and
iT3 flow through S
2 and S
3, S
6 and S
7, S
10 and S
11 respectively. D
s10 and D
s11 conduct prior to the main switches of S
10 and S
11, thus, S
10 and S
11 are turned on with ZVS. This stage ends at
t12, when S
2 and S
3 are turned off.
4. Design Parameter Optimization
Same as the other resonant converters, the optimization for the resonant parameters is of great importance, since the operating characteristics of the proposed converter are mainly affected by these parameters. The design requirements of the proposed converter are shown as follows:
Port 1: V1 = 200 V, P1 = 1000 W;
Port 2: V2 = 160 V, P2 = 500 W;
Port 3: V3 = 400 V, P3 = 1500 W.
The parameters which need to be optimized include the transformer ratio, values of resonant components and driving frequency. The optimization objectives are ZVS range, peak value of resonant currents, voltage stress of resonant capacitors and cutoff current of switches. And the parameters are optimized in detail in the following.
Since the voltage of transformer is clamped by the voltage of port 3, there is no direct power interaction between port 1 and port 2. It is feasible to decompose the proposed MR-TP-BDC into two single input MR-BDCs, and the design principles of port 1 and port 2 are identical. To simplify the analysis, the operating characteristics of single input MR-BDC are analyzed in this section.
4.1. Transformer Ratio Optimization
The transformer turn ratio affects voltage gain M1 and M2 as shown in Equations (8) and (9). Furthermore, Equation (14) indicates the voltage gains directly influence the ZVS realization ranges of three ports. Since there is no direct power interaction between port 1 and port 2, the ZVS realization ranges of port 1 and 3 under single input condition are efficient to analyze the relationship between voltage gain and ZVS region.
The ZVS constraint conditions of three ports are given in (14). In the condition of single input, the ZVS realization conditions of port 1 and 3 are
i′
T1,pu(−
ϕ13/
ωs) < 0 and
i′
T1,pu(0) > 0 respectively. The ZVS regions of port 1 and port 3 under varying
M1 are shown in
Figure 7a,b.
Figure 7a indicates that when
M1 is less than or equal to 1, all the switches in port 1 can realize ZVS. When
M1 is greater than 1, switches in port 1 cannot realize ZVS unless
ϕ13 (output power) is greater than a certain value. While for port 3 shown in
Figure 7b, conditions are exactly contrary to port 1. When
M1 is less than 1, switches in port 3 can only realize ZVS only when the phase shift angel is greater than a certain value. It can be obtained that, the ZVS realization regions of port 1 and port 3 change reversely under varying
M1, so during the design process,
M1 should be as close to 1 as possible, and
M1 = 1 is the best choice to achieve ZVS for all the switches of port 1 and 3.
Conditions of port 2 are exactly the same with port 1, and M1 = M2 = 1 are the optimal voltage gains to guarantee ZVS operation of all switches of proposed isolated MR-TP-BDC. According to the given voltages of three ports and voltage gains, turn ratios of transformer are defined as: n13:n23:1 = 0.5:0.4:1.
4.2. Resonant Components Optimization
The MR storage in the proposed converter consists of four resonant elements: resonant capacitors CR and CP, resonant inductors LR and LP. While there are constraint relations between the four resonant elements as shown in Equation (4). This will greatly reduce the difficulty of parameters design. In the following parameters design process, LP is selected as the optimization variable. In the considered single-input converter, P1,pu = P3,pu, iT1,pu(t) = i′T1,pu(t)/n13, i′T1,pu(−ϕ13/ωs) = −iT3,pu(0).
With given voltage gains, resonant parameters and driving frequency, the phase shift angle ϕ13, which can provide certain P1,pu, will be derived by solving Equation (16). Then substitute ϕ13 into (10), the corresponding cutoff current is expressed as iT1,pu(-ϕ13/ωs) = i′T1,pu(-ϕ13/ωs)/n13. Through using the function of seeking maximum value in MATLAB (Mathworks, Natick, MA, USA), the peak value of resonant current is acquired, and expressed as IT1max,pu = max[i′T1,pu(t)]/n13.
Figure 8 shows the peak value of resonant current
IT1max,pu, peak value of resonant capacitor voltage
VCR1max,pu and cutoff current of port 1
iT1,pu(−
ϕ13/
ωs) versus
P1,pu under varying
LP. In the designing process,
P1 = 1000 W,
PB =
P3 = 1500 W, therefore, the maximum value of
P1,pu is 0.67.
Figure 8 indicates that the peak value of resonant current, peak value of resonant capacitor voltage and cutoff current increase
LP increases. From the point of view of reducing the power loss of proposed MR-TP-BDC,
LP should be chosen as small as possible. Meanwhile, the converter will lose its ZVS property when the cutoff current is very small. In this condition, the energy stored in the MR storage is not enough to get the output capacitor of metal-oxide-semiconductor field effect transistor (MOSFET) completely discharged. Therefore, the critical cutoff current value, which guarantee ZVS of converter, should be deduced.
The analysis above indicates that M1 = M2 = 1 are the optimal voltage gains to guarantee ZVS operation of all switches of proposed isolated MR-TP-BDC. Equation (14) shows the ZVS constraint expressions of three ports. While, the aforementioned conclusions are all based on ideal MOSFETs and the output capacitors of MOSFETs are neglected. However, in the actual experimental processes, the energy stored in the resonant tanks must be enough to get the output capacitors fully discharged during the dead time. Hence the cutoff current must be high enough to achieve ZVS condition.
When the MOSFETs are turned off, their drain-source voltages are equal to their respective port voltages. On the basis of the utilized design method, port 3 has the highest voltage of 400 V, and thus the output capacitors of MOSFETs in ports 3 store most energy in their cut-off stage. Besides, port 3 has the highest voltage, which means a smaller winding current. Hence the ZVS realization conditions of switches in port 3 are the most difficult. Moreover, the discharging current of the switch parasitic output capacitor of port 3 decreases when power is transferred from port 3 to port 1.
Figure 9 shows the critical ZVS condition of switches in port 3 under the most severe situation. In this condition, output capacitor of S
9 is just completely discharged when the resonant current decreases to zero. The corresponding cutoff current is defined as
Itomin, which is the minimum cutoff current to guarantee ZVS operation of port 3.
In
Figure 9,
t1–
t2 and
t3–
t4 are the dead time of port 3. At
t3, S
10 is turned off, and the output capacitors of S
9 and S
10 begin to get discharged and charged, respectively. The values of charging and discharging current of S
9 and S
10 are all
iT3,pu(
t)/2. During
t3–
t4,
iT3,pu(
t) is assumed to be decrease linearly. According to the discharging formula of capacitor, the voltage changing process of S
9 can be expressed as:
Thus, the critical ZVS condition of S
9 shown in
Figure 9 is derived as:
where
Coss is the parasitic output capacitor of switches and
tDB represents the dead time. For the MOSFET selected in this article, the value of parasitic output capacitor under 0–400 V voltage range is 150 pF. The dead time is chosen as 200 nS. By substituting
Coss and
tDB into (22),
Itomin is derived as 1.2 A. Since the power distribution among three ports are:
P1:
P2:
P3 = 2:1:3, then the minimum cutoff current assigned to port 1 is approximated as:
To ensure the converter efficiency under rated power state, the cutoff current should be minimized on the premise of realizing ZVS.
Figure 8c shows that, when
LP = 10 μH, the cutoff current of port 1 is
iT1,pu(–
ϕ13/
ωs) = 0.40 and it doesn’t satisfy the ZVS constraint shown in (23). When
LP = 15 μH,
iT1,pu(–
ϕ13/
ωs) = 0.59, ZVS operation can be guaranteed. What’s more, the peak value of resonant current and resonant capacitor voltage are
IT1max,pu = 2.18 and
VCR1max,pu = 0.37 respectively, and both of them are in a reasonable range. To sum up,
LP = 15 μH is selected in the proposed isolated MR-TP-BDC.
4.3. Driving Frequency Optimization
Equation (6) indicates that the MR storage impedances under fundamental and third order frequencies change under varying
F. The operating characteristics of the proposed converter should be compared under different
F. The peak value of resonant current
IT1max,pu, peak value of resonant capacitor voltage
VCR1max,pu and cutoff current of port 1
iT1,pu(–
ϕ13/
ωs) are plotted by MATLAB and are shown in
Figure 10.
Figure 10 shows that the effects of
F on
IT1max,pu and
VCR1max,pu are small and can be neglected. While the cutoff current
iT1,pu(–
ϕ13/
ωs) increases obviously with the increase of
F. The ZVS constraint deduced in 4.2 is also shown in
Figure 10c. If
F = 1.15 is adopted in the full load range, ZVS properties will be missed. Therefore, to ensure optimal efficiency under full load range, driving frequency should increase with the decrease of power level. Values of
F under the rated and half load conditions are selected as 1.15 and 1.35, respectively.
5. Experimental Results
To verify the feasibility of the proposed topology and the accuracy of the theoretical analysis, a 1.5 kW prototype is built and tested in the laboratory. The MOSFETs adopted in the system is C3M0065090D manufactured by CREE (Durham, NC, USA). The DSP TMS320F28379D from Texas Instruments (Dallas, TX, USA) is employed as the digital controller. The optimized parameters of the proposed converter are selected and shown in
Table 1. In the experiments
P1,
P2 and
P3 are defined as positive when power flows from port 1 and port 2 to port 3, and vice versa.
5.1. Forward Operating Mode
Experimental results under rated and half load positive conditions are evaluated. In the rated positive mode, port 1 and 2 are connected to voltage sources of 200 V and 160 V, respectively. A resistive load of 106 Ω is connected to port 3. In this experiment, power flows from port 1 and 2 to port 3, vT1 and vT2 lead vT3. The specific data of this experiment are given as follows: input voltage V1 = 200 V, V2 = 160 V; output voltage V3 = 398 V; driving frequency fs = 110 kHz, ϕ13 = 14.2°, ϕ23 = 11.1°; P1 = 1015 W, P2 = 497 W, P3 = 1455 W. The efficiency is 96.2%.
Waveforms of output voltage and current of port 3 are shown in
Figure 11a.
iT1,
iT2 and
iT3 are currents of three transformer windings and are presented in
Figure 11b.
Figure 12a–d show the operating waveforms of port 1, such as
iT1, and the drain-source voltages and the driving signals of S
1 and S
3 vDS_S1,
vG_S1,
vDS_S3 and
vG_S3.
Figure 12e–h and
Figure 12i–l show waveforms of port 2 and port 3 respectively.
Figure 12b,d,f,h,j,l are zoomed-in versions of
Figure 12a,c,e,g,i,k. It can be obtained from the zoom-in figures that the drain-source voltages of MOSFETs decrease to zero before their driving signals turn to positive. Furthermore,
vG_S1 and
vG_S5 turn positive when
iT1 and
iT2 are negative,
vG_S3 and
vG_S7 turn positive when
iT1 and
iT2 are positive.
vG_S9 turns positive when
iT3 is positive, and
vG_S11 turns positive when
iT3 is negative. The above-mentioned facts prove that S
1 and S
3 of port 1, S
5 and S
7 of port 2 and S
9 and S
11 realize ZVS successfully, which means all the three-port switches achieve the desirable ZVS feature.
Figure 13 and
Figure 14 show waveforms under half load positive mode. In this condition, voltage sources of 200 V and 160 V are supplied to port 1 and port 2, respectively. The load resistance connected to port 3 is 213 Ω. In this experiment, output voltage
V3 = 399V; driving frequency
fs = 130 kHz,
ϕ13 = 15.8°,
ϕ23 = 10.3°;
P1 = 549 W,
P2 = 230 W,
P3 = 747 W; the efficiency is 95.8%.
Waveforms of output voltage and current of port 3 are shown in
Figure 13a.
Figure 13b shows waveforms of three transformer windings.
Figure 14a,b,
Figure 14c,d and
Figure 14e,f demonstrate waveforms of port 1, port 2 and port 3. Like the experimental results shown in
Figure 12, ZVS is achieved for all switches of the three ports.
5.2. Reverse Operating Mode
In the negative operating mode, 400 V voltage source is supplied to port 3 and resistive loads are connected to port 1 and port 2. Power is transferred from port 3 to port 1 and port 2, and both ϕ13 and ϕ23 are negative. Experimental results under rated and half load conditions are illustrated.
Under the rated power condition, resistances of port 1 and port 2 are 40 Ω and 50 Ω, respectively. The experimental results are listed as: output voltages V1 = 198 V, V2 = 159 V; driving frequency fs = 110 kHz, ϕ13 = −13.9°, ϕ23 = −11.4°; P1 = −965 W, P2 = −502 W, P3 = −1520 W; efficiency is 96.5%.
Figure 15a gives the waveforms of output voltage and current of port 1 and 2.
Figure 15b shows the waveforms of resonant currents of three ports.
Figure 16a demonstrates
iT1,
vDS_S1 and
vG_S1 of port 1.
Figure 16c illustrates
iT2,
vDS_S5 and
vG_S5 of port 2.
Figure 16e shows
iT3,
vDS_S9 and
vG_S9 of port 3.
Figure 16b,d,f are zoomed-in waveforms of
Figure 16a,c,e. The waveforms of three ports are consistent with the analysis above, and ZVS is achieved for all MOSFETs of the three ports.
Under the half power condition, resistances of port 1 and port 2 are 80 Ω and 100 Ω, respectively. The experimental results are listed as: output voltages V1 = 197 V, V2 = 159 V; driving frequency fs = 130 kHz, ϕ13 = −15.0°, ϕ23 = −11.3°; P1 = −484 W, P2 = −250 W, P3 = −764 W; efficiency is 96.0%.
Waveforms of output voltage and current of port 1 and 2 are shown in
Figure 17a.
Figure 17b shows the waveforms of three transformer windings. The waveforms illustrated in
Figure 18 are same those in
Figure 16. ZVS is achieved for all the MOSFETs.
The comparisons of phase shift angles obtained from theoretical calculation and experiment are given in
Table 2. It can be seen that all the values match reasonably close to each other, and this proves the accuracy of the theoretical analysis.
Finally, the measured efficiency curves under positive and negative conditions is shown in
Figure 19. The efficiency under rated bidirectional conditions are 96.2% and 96.5%, respectively. The highest efficiency under forward condition is 96.7% at 1.25 kW, and 96.9% under 1 kW in reverse mode. Furthermore, when the power is above 0.5 kW, the efficiencies of both directions are higher than 95.5%. The proposed converter is proved to have high efficiency within entire load range.