Loncarski, J.; Monopoli, V.G.; Leuzzi, R.; Ristic, L.; Cupertino, F.
Analytical and Simulation Fair Comparison of Three Level Si IGBT Based NPC Topologies and Two Level SiC MOSFET Based Topology for High Speed Drives. Energies 2019, 12, 4571.
https://doi.org/10.3390/en12234571
AMA Style
Loncarski J, Monopoli VG, Leuzzi R, Ristic L, Cupertino F.
Analytical and Simulation Fair Comparison of Three Level Si IGBT Based NPC Topologies and Two Level SiC MOSFET Based Topology for High Speed Drives. Energies. 2019; 12(23):4571.
https://doi.org/10.3390/en12234571
Chicago/Turabian Style
Loncarski, Jelena, Vito Giuseppe Monopoli, Riccardo Leuzzi, Leposava Ristic, and Francesco Cupertino.
2019. "Analytical and Simulation Fair Comparison of Three Level Si IGBT Based NPC Topologies and Two Level SiC MOSFET Based Topology for High Speed Drives" Energies 12, no. 23: 4571.
https://doi.org/10.3390/en12234571
APA Style
Loncarski, J., Monopoli, V. G., Leuzzi, R., Ristic, L., & Cupertino, F.
(2019). Analytical and Simulation Fair Comparison of Three Level Si IGBT Based NPC Topologies and Two Level SiC MOSFET Based Topology for High Speed Drives. Energies, 12(23), 4571.
https://doi.org/10.3390/en12234571