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Journal: Energies, 2020
Volume: 13
Number: 2479

Article: High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator
Authors: by Hsiang-Chun Wang, Hsien-Chin Chiu, Chong-Rong Huang, Hsuan-Ling Kao and Feng-Tso Chien
Link: https://www.mdpi.com/1996-1073/13/10/2479

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