A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET
Abstract
:1. Introduction
2. Analysis of Turn-on Loss
2.1. Turn-on Process of Kelvin Packaged SiC MOSFET
2.2. Turn-on Process of Non-Kelvin Packaged SiC MOSFET
3. SRD-Type Drive Circuit
3.1. Operating Principle of SRD-Type Drive Circuit
3.2. Simulation Verification
4. Experimental Verification
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Test Conditions | |
---|---|
Input voltage VDC | 600 V |
Output current IO | 15 A |
Gate resistance Ron/Roff | 3 Ω |
Contents of Comparison | Traditional Driving Circuit | SRD-Type Drive Circuit |
---|---|---|
Turn-on loss | 0.20 mJ | 0.21 mJ |
Gate-source voltage spike | 36.5 V | 16.8 V |
Drain current spike | 47 A | 25 A |
Drain-source voltage spike | 768 V | 600 V |
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Zhao, H.; Chen, J.; Li, Y.; Lin, F. A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET. Energies 2021, 14, 2449. https://doi.org/10.3390/en14092449
Zhao H, Chen J, Li Y, Lin F. A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET. Energies. 2021; 14(9):2449. https://doi.org/10.3390/en14092449
Chicago/Turabian StyleZhao, Hongyan, Jiangui Chen, Yan Li, and Fei Lin. 2021. "A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET" Energies 14, no. 9: 2449. https://doi.org/10.3390/en14092449