Estimation of Energy-Saving Potential Using Commercial SiC Power Converters ^†

Abstract

This study evaluates the annual global energy-savings potential of various power electronics applications utilizing commercial silicon carbide (SiC) wide bandgap (WBG)-based power converters. As the first analysis to focus on real market products, our findings reveal that SiC-based converters offer significant energy-saving potential across all examined applications. Additionally, given the substantial yearly growth in installing photovoltaic (PV) systems and electric vehicle (EV) chargers, we project a considerable future energy-saving potential. This research underscores the importance of SiC technology in enhancing energy efficiency and supports its broader adoption in power electronics to achieve global energy savings.

1. Introduction

Power semiconductors are the building blocks for power electronics applications which, in turn, play a major role in the electrification of societies. The semiconductor components are not only the key to achieving high energy efficiency conversion in energy systems, but also the key to guarantee long lifetime operation under increasingly demanding environments.

As societies increasingly promote decarbonization and digitalization, particularly with the expansion of data centers, renewables, and electrical vehicles, more and more power electronics conversion will be required, resulting in a massive increase in electrical energy consumption. Within this context, providing power semiconductors with lower energy losses and longer lifetimes is the key to improving conversion efficiency and, as such, to achieve carbon-neutral societies. In fact, the electrical energy savings that can be achieved by using more efficient power semiconductors are massive and directly impact several United Nations Sustainable Development Goals (SDG) [1] such as achieving affordable clean energy; facilitating decent work and economic growth; promoting industry, innovation and infrastructure; and enabling responsible consumption and production.

The semiconductor industry is continually pushing for power semiconductor technologies with suitable electrical and reliability properties, owning 10% of the entire semiconductor market [1]. As part of this development, power semiconductors based on SiC wide bandgap materials can offer significantly lower energy losses, and as such, reduce overall conversion losses in converters as well as the size of cooling and electromagnetic components [2,3]. Several studies [2,3] have reported the potential energy savings of WBG converters in specific applications. However, these investigations were based on power converters developed in academic environments rather than commercial products and, thus, were not fully compatible with industry standards and commercial products available.

The purpose of this manuscript is to provide an introduction to the impact of power semiconductors in electrical power systems, with a specific focus on the assessment of potential energy savings in power electronic applications featuring SiC power semiconductors. In order to investigate more realistic scenarios compatible with state-of-the-art mainstream technologies, we have assembled a comprehensive list of power electronic commercial systems featuring SiC devices and used their provided efficiency values (when available) for the energy-saving potential assessment.

Our analysis provides the energy-saving potential of WBG technologies with existing products that can serve to guide energy scientists as well as policymakers, who are often not familiar with power electronics and power semiconductor technologies [4]. In this work, we have investigated six applications for SiC: data centers, PV inverters (centralized inverters (c-PV) and string inverters (s-PV)), drive inverters, HVAC (heating, ventilation, and air conditioning) appliances, EV on-board and off-board charging converters, and residential battery storage.

2. SiC Power Semiconductors

Silicon has been the mainstream semiconductor material used to fabricate power semiconductor devices for decades. The accumulated knowledge acquired in silicon microfabrication techniques has allowed for continuous and aggressive improvement in device performance. Furthermore, several types of semiconductor Si switches tailored for specific applications have been invented and developed [1]. However, the need for systems with improved efficiency performance and increased power density has placed a new class of materials, defined as wide-bandgap (WBG) materials, as the best viable alternative [1]. Wide-bandgap materials consist of semiconductors with a bandgap higher than 2 eV. Classic examples already at the commercial stage are silicon carbide (SiC—3.26 eV) and gallium nitride (GaN—3.4 eV) with applications in power electronics (SiC and GaN) and radiofrequency circuits (GaN).

A higher energy gap directly influences the maximum electrical field that a material can handle before breakdown, with 4H-SiC wafers presenting a 10 times higher breakdown of the electrical field compared to Si (3 MV/cm for SiC versus 0.3 MV/cm for Si). Such a characteristic allows the design of semiconductors with lower drift region resistance, which is the region responsible for the high voltage blocking. Consequently, devices with optimized lower on-state resistance than Si devices in the same voltage class are possible. Furthermore, higher voltage classes (>6.5 kV) become a viable alternative due to the lower on-state resistance and high voltage blocking capability. This last characteristic has a significant impact in the medium and high voltage range, with the possibility of higher voltage-rated devices that still do not exist in the market. Such switches enable topology simplification with fewer semiconductor switches that simplify design costs and complexity and improve system reliability.

Regarding high-temperature operation, WBG devices can theoretically operate at higher junction temperatures due to their increased thermal runaway limit for a specific blocking voltage [5]. Although this is an excellent characteristic of WBG devices, the packaging technology and reliability issues still impose limitations on the maximum operating temperature. Most commercial SiC devices present a maximum junction temperature equal to Si technology, requiring further intensive research and development efforts to allow operation at higher junction temperatures [5]. Reliable device operation at higher temperatures would be a huge step forward in reducing SiC-based power converter cost per kWh. Furthermore, it can revolutionize harsh applications like drilling, where high-temperature environment operation is required [6], improving converter ruggedness and allowing further cooling size optimization. Another characteristic of SiC devices is the fast switching that allows operation at higher switching frequencies due to reduced switching losses. This characteristic is due to the higher saturated electron drift velocity of 4H-SiC compared to Si (~2 × higher) and the fact that the drift distance of 4HSiC power devices can be shorter than that of Si ones with the same blocking voltage [7]. Consequently, SiC switching power devices can present an optimized design for faster switching than Si power devices [7] with lower parasitic capacitances.

The first SiC commercial device was introduced in 2001 [8]. From then on, several developments have been achieved, with the introduction in the market of the 650, 1200, and 1700 V voltage classes (MOSFET and diodes). Regarding MV classes, the 3.3 kV class is the closest one to reach the market, with samples close to the production stage.

Table 1. Commercial discrete and power module SiC MOSFETs and Si IGBTs at 650 V, 1200 V, and 1700 V voltage classes are provided. The conduction and switching characteristics and prices of similar rating devices are compared.

	Device Model SiC MOSFET /Price	On State Voltage (25 °C)	Switching Losses	Device Model Si IGBT /Price	On State Voltage (25 °C)	Switching Losses
Nominal current: 100 A (Tc at 25 C) Voltage: 650 V	TW015Z65C 42.94 CHF	0.7 V at 50 A	Eon: 310 μJ Eoff: 232 μJ (Vdd: 400 V, I: 50 A, T: 25 °C)	FGH4L50T65MQDC50 10.24 CHF	1.45 V at 50 A	Eon: 540 μJ Eoff: 590 μJ (Vdd: 400 V, I: 50 A, T: 25 °C)
Nominal current 100 A (Tc at 25 C) Voltage: 1200 V	AIMZHN120R020M1T 29.05 CHF	2 V at 100 A	Eon: 0.55 mJ Eoff: 0.25 mJ (Vdd: 800 V, I: 100 A, T: 175 °C)	IKQ50N120CH3 9.92 CHF	2.9 V at 100 A	Eon: 5.3 mJ Eoff: 4.1 mJ (Vdd: 600 V, I: 50 A, T: 175 °C)
Nominal current 300 A Voltage: 1200 V	CAS300M12BM2 808.28 CHF	1.5 V at 300 A	Eon: 3 mJ Eoff: 3.4 mJ (Vdd: 600 V, I: 300 A, T: 125 °C)	FF300R12KS4P 194.3 CHF	3.2 V at 300 A	Eon: 25 mJ Eoff: 15 mJ (Vdd: 600 V, I: 300 A, T: 125 °C)
Nominal current 300 A Voltage: 1700 V	CAS300M17BM2 942.17 CHF	2.2 V at 300A	Eon: 13 mJ Eoff: 10 mJ (Vdd: 900 V, I: 300 A, T: 150 °C)	5SNG 0300Q170300 188.20 CHF	2.25 V at 300A	Eon: 95 mJ Eoff: 75 mJ (Vdd: 900 V, I: 300 A, T: 125 °C)
Nominal current 100 A (Tc at 25 C) Voltage: 1700 V	C3M0021120K 33.25 CHF	1 V at 50A	Eon: 0.65 mJ Eoff: 0.2 mJ (Vdd: 600 V, I: 50 A, T: 25 °C)	IXYH30N170C 13.53 CHF	4.4 V at 50A	Eon: 3.8 mJ Eoff: 3.4 mJ (Vdd: 850 V, I: 50 A, T: 25 °C)

shows commercial SiC devices compared to similar ratings of Si IGBT for three different voltage classes (650, 1200, and 1700 V). Overall, SiC technology presents lower conduction and switching losses at a higher price (around 3 to 4 times more). However, due to the lower losses and higher power density allowed with designs at higher switching frequencies [2], the SiC converter price can be mitigated with reduced cooling and magnetics. Furthermore, the long-term energy savings that the SiC technology provides during the converter life cycle allow for a lower cost system than Si-based power converters [9].

3. Methodology

The methodology is defined as: (i) assembling a list of commercial systems with SiC devices through research and contacting manufacturers, (ii) using datasheet-provided efficiency values for energy-savings assessment, (iii) investigating six applications: data centers, PV inverters, drive inverters, HVAC appliances, EV charging converters, and residential battery storage, and (iv) reviewing annual energy usage from the literature to estimate energy losses for Si and WBG converters.

A challenging part of this investigation was finding out which products feature WBG power semiconductors. We have contacted several commercial power electronics manufacturers, searched their websites, and investigated press releases. Surprisingly, there was no mention of WBG in the product datasheet in most cases, but instead in the press release of the products with the partnership with WBG power semiconductor manufacturers.

To illustrate the application domains of different WBG semiconductor technologies, Figure 1 shows the power and frequency ranges for SiC and GaN semiconductors. SiC devices are typically used in high-power applications such as data centers, electric vehicles (EVs), EV chargers (EV-c), centralized PV inverters (c-PV), string PV inverters (s-PV), drives, HVAC systems, and residential battery storage. GaN devices, on the other hand, are more suited for high-frequency, lower-power applications like laptop chargers (Laptop-c).

The found manufacturers and their SiC products for each application are shown in

Table 2. List of SiC-based commercial products, including power and conversion efficiency. The reported efficiencies can be peak (most cases), average or minimum efficiency values depending on the manufacturer.

Application	Manufacturer	Product	Power	Efficiency (%)
Data center	Eaton	Eaton 93 PR UPS [10]	300–1200 kW	99
	Mitsubishi	Summit series [11]	500 kW	98.2
	Toshiba	G2020 series [12]	500, 750 kW	98.2
	TMEIC	Next GEN UPS [13]	n/a	98
PV inverter	GE	LV5+ [14]	2.7–3.5 MW	98.9
	SMA	Sunny High power peak 3 [15]	150 kW	99
	Sungrow	SG250HX [16]	250 kW	99
	Fronius	Symo GEN 24 Plus [17]	3–5 kW	98.2
	REFUsol	020K-SCI [18]	20 kW	98.7
	Kaco	Blue Planet 150 TL3 [19]	150 kW	99.2
Motor drives	Infinitum	Aircore EC: Int. drive [20]	3–12 kW	n/a
	Plettenberg	MST 400-160 SiC [21]	66 kW	n/a
	APD	Aergility ATLIS UAV [22]	n/a	98
Off-board EV charger	Ingeteam	Rapid ST400 [23]	Up to 400 kW	n/a
Residential battery storage	Kaco	Blueplanet 92.0-137 TL3-S [24]	92–137 kW	98.8
Electric	Tesla	Model 3	208 kW	n/a
Vehicles		Model Y	220–286 kW	n/a
Traction		Model S	615 kW	99
Inverter	BYD	Han EV	363 kW	n/a
[25]		Tang	151 kW	n/a
		Seal	390 kW	n/a
	Kia	EV6	125–430 kW	n/a
	Ford	F-150 Lightning	337 kW	n/a
	Hyndai	Ioniq 5	239 kW	n/a
		Ioniq 6	111 kW	n/a
	Genesis	GV60	160 kW	n/a
	Lucid	Air	321 kW	n/a
	Volvo	EM90	398 kW	n/a
	Zeekr	007	310 kW	n/a
		001FR	930 kW	n/a
		009	400 kW	n/a
	Lotus	Electre	675 kW	n/a
	Maserati	GranTurismo	405 kW	n/a
	Smart	#1 EV	200 kW	n/a
	Nio	ET7	480 kW	n/a
		ET5	360 kW	n/a
HVAC	Mitsubishi	MSZ-LN60VG (W) (V) (R) (B)	6 kW	n/a
[26]		MSZ-LN50VG (W) (V) (R) (B)	5 kW	n/a
		MSZ-LN35VG (W) (V) (R) (B)	3.5 kW	n/a
		MSZ-LN25VG (W) (V) (R) (B)	2.5 kW	n/a
On-board charger [27]	Innoelectric	On-board charger (OBC)	22 kW	96

. The goal was to gather as much technical information as possible about these products, particularly regarding converter efficiency.

In order to assess the potential for energy saving, we conducted a review of the annual energy usage for various applications from the literature, which enabled us to determine the annual energy losses for applications that utilize silicon (Si) and wide bandgap (WBG) converters.

However, our assessment is subject to the following uncertainties:

• The datasheets often lack comprehensive information, typically providing only peak efficiency figures. This can obscure the true benefits of WBG converters, especially in scenarios where they operate under partial load. To enhance the precision of our estimates, further characterization and simulation that take into account different load profiles are necessary.
• The estimated energy savings are based on the total energy consumption figures for the various applications, which themselves are approximations.
• Generally, there is a lack of detailed information regarding the converters’ internal designs from the manufacturers. It remains unclear whether these converters are fully equipped with SiC MOSFET (metal-oxide semiconductor field-effect transistor) configurations or if they incorporate SiC diodes alongside Si IGBTs (insulated-gate bipolar transistors) within a hybrid setup. The latter scenario could lead to an underestimation of efficiency gains.
• The efficiency of converters is highly influenced by additional parameters such as power rating, frequency, and operational ranges. When power converter manufacturers have access to better semiconductors, such as SiC devices, they often do more than simply replace the old components to achieve lower power losses. Typically, they leverage the superior performance characteristics of these semiconductors to enhance the overall design. One common approach is to increase the switching frequency, which allows for the reduction in the size of passive components like inductors and capacitors, leading to more compact and lighter converters. However, this design choice can impact the real energy savings, as higher switching frequencies may introduce additional losses due to increased switching events. Designers often face a trade-off between maximizing efficiency and achieving higher power density. While SiC devices inherently offer higher efficiency, the ultimate savings depend on how these devices are integrated into the system. If the primary goal shifts towards improving power density, the efficiency gains might be partially sacrificed. Therefore, while SiC semiconductors present significant advantages, the actual energy savings realized in practice will depend on the specific design choices made by the engineers.

Acknowledging these limitations, our focus has been on collecting information that is publicly available from commercial products online and performing calculations with required further estimation of missing parameters.

4. Silicon Carbide Applications

4.1. Data Centers

According to the International Energy Agency (IEA), the worldwide energy consumption from data centers in 2021 was between 220 and 320 TWh [28]. This estimation excludes the energy used for mining cryptocurrencies, which is about 100–140 TWh [28].

Two scenarios have been considered: the first one represents the global energy consumption of data centers alone, with a value of 320 TWh used in the calculations, and the second scenario includes the energy used to mine cryptocurrencies, with a value of 460 TWh considered in the estimation. The energy consumption of the information technology (IT) equipment in a data center (without auxiliary systems) was estimated with the help of Equation (1), where the power usage effectiveness (PUE) represents the effective amount of energy used in the IT equipment.

$$PUE={\displaystyle \frac{Total facility energy}{IT equipment energy}}$$

(1)

An average of 1.59 PUE is assumed for data centers worldwide [29]. Employing Equation (1), the IT equipment energy consumption is 201 TWh for the first scenario and 289 TWh for the second scenario.

The input energy in a data center passes through uninterruptible power supplies (UPSs) and power distribution units (PDUs) to power the servers. Due to a dual power source strategy for increased redundancy and reliability, many IT systems operate in loads ranging from 20 to 40% [23] of the PDU’s nominal values. To estimate the data center efficiency for silicon-based converters, experts rely on the efficiency values of about 95.8% to 96.1% in the 20–40% load range [30]. Therefore, we can assume that silicon-based UPSs operate with an average efficiency of 96%. Furthermore, SiC-based UPSs have a stable efficiency of about 98.3%, based on the calculated average efficiency of four commercial SiC UPSs [10,11,12,13] in the 20–40% load range. Thus, a possible global energy-saving potential was estimated with SiC technology implementation of 4.6 TWh/year for the first scenario and 6.7 TWh/year for the second scenario, respectively.

4.2. PV Power Generation

As reported by the IEA, solar PV electricity generation reached 1300 TWh in 2022 [31,32]. A typical SiC-based PV inverter may present a peak efficiency in the range of 98.2 up to 99.2% (Table 1). As such, we selected the commercial converter from Kaco [19], with a peak efficiency of 99.2% for the calculations.

Figure 2 illustrates the annual energy yield comparison between silicon (Si) and silicon carbide (SiC) inverters for a 10 kW photovoltaic (PV) residential installation across nine locations. This comparison is based on irradiation profiles simulated using SOLEXTRON software (www.solextron.com, accessed on 12 June 2023) for each location. The Si IGBT and SiC MOSFET inverters were characterized at 16 kHz and 100 kHz, respectively, using PLECS to assess their efficiency under varying solar irradiation, as referenced in the study [33]. On average, a 10 kW SiC inverter generates 220 kWh more energy annually than a Si IGBT inverter when used in the same plant, highlighting the superior performance of SiC technology in residential PV systems. Figure 3 shows the energy lost, averaged over 15 min intervals, in both types of inverters throughout a day’s profile in the selected locations, with data taken from a representative day each quarter of the year.

Although PV inverter manufacturers often report peak efficiencies for SiC of up to 99.2%, the actual operational efficiencies under real irradiation profiles are somewhat lower at around 99%. The operational efficiency for Si and SiC inverters, calculated for various locations based on the energy generated from the PV panel output and the inverter output, is depicted in Figure 4. On average, the SiC inverter demonstrates approximately a 1.6% increase in efficiency compared to the Si IGBT inverter. This implies that the SiC PV inverters have a global energy-saving potential of around 21 TWh, considering the operational efficiency of the inverters.

4.3. Motor Drives

In order to estimate the energy-saving potential of motor drive inverters using SiC technology, we first assessed the total energy consumption of this application. Electric motors account for 40–45% of global electricity consumption [34]. These motors can be categorized by their power rating into three groups—small (10–750 W), medium (0.75–375 kW), and large motors (>375 kW)—which represent approximately 9%, 68%, and 23% of the energy used by electric motors, respectively [34]. According to [34], 30% of all electric motors in Germany are sold with a variable frequency drive (VFD). Implementing VFDs can achieve up to 40% energy savings [35], and when combined with SiC topologies, may result in an additional 5% increase in efficiency depending on the topology and application [35].

In 2021, global electricity use was about 25,000 TWh [36]. Electric motors accounted for about 45% of this, equating to an estimated 11,250 TWh. Assuming a direct correlation between the percentage of motors sold with VFDs and their energy consumption without VFDs, we estimate a value of 3375 TWh. If VFD implementation reduces energy consumption by 40%, the resulting energy consumption is 2025 TWh/year. This figure represents the energy consumption of all motors using silicon VFDs currently in place. Assuming 93% efficiency for Si-based drives and 98% for SiC-based drives, the energy-saving potential of SiC vs. Si is 103 TWh/year. This potential can be further enhanced if the adoption rate of VFDs increases. Industry experts suggest that roughly 50% of industrial motors could benefit from VFD systems [37].

4.4. HVAC

HVAC applications also utilize VFDs to minimize power losses and are included in motor drive applications. Although SiC HVAC products are available in the market, their datasheets often do not provide efficiency values for the drives. The energy consumption for HVAC applications is estimated to be 19% for pumps, 19% for fans, and 32% for compressors of the total global energy consumption by motors (11,250 TWh). These percentages represent the estimated share of the global motor electricity demand for HVAC applications [34]. We applied the same assumptions from the previous section, assuming a direct correlation between the percentage of motors sold with VFDs (30%) and their energy consumption without VFDs.

Following the aforementioned assumptions, the global energy-saving potential of HVAC applications using SiC technology in VFDs is estimated to be 20 TWh for fans, 20 TWh for pumps, and 33 TWh for compressors.

4.5. E-Vehicle DC Fast Charging Stations (Off-Board) and On-Board Chargers (OBC)

An average electric car consumes approximately 0.2 kWh/km [38], and the average driving distance was 11,300 km/year for the European Union in 2019 [39], giving a total energy consumption of 2260 kWh per car annually. According to IEA [40], it is estimated that a total number of 16.5 million global EV cars are on the road in 2021. Considering 16.5 million vehicles, a global energy consumption of about 37.3 TWh is estimated. According to [41], SiC can achieve a peak efficiency of 97%, depending on the used topology. The comparison was performed with the Terra charging station from ABB [42], which uses Si technology and presents an efficiency of about 95%. The SiC efficiency improvement may lead to a potential energy saving of 0.81 TWh for EV chargers compared to Si chargers.

In the case of on-board chargers (OBC), based on the global e-vehicle energy consumption of about 37.3 TWh estimated above, and the SiC commercial onboard charger efficiency of 96% [27] versus Si efficiency of 95%, the SiC improvement results in a potential energy saving of 0.41 TWh.

4.6. EV Traction Inverters

As the efficiency data for commercial electric vehicle (EV) inverters are not readily available, we rely on reference studies to compare silicon (Si) and silicon carbide (SiC) inverters for EV applications. Rather than focusing solely on peak efficiencies, we emphasize the operational efficiency of inverters over standard drive cycles, providing a more realistic performance measure. An online report indicates that a SiC-based Tesla EV inverter exhibits up to 99% peak efficiency [43], thus being able to achieve a 3–5% increase in efficiency compared to Si IGBT inverters over the driving profile [44,45]. This improves the overall energy performance of EVs, contributing to longer driving ranges and reduced energy consumption.

The modeling and simulation of both silicon (Si) and silicon carbide (SiC) inverters were conducted to determine their operational efficiency as outlined in [45]. When operating at a switching frequency of 12 kHz, the inverters exhibit an efficiency as mentioned in

Table 3. Power converter efficiency comparison over WLTC drive cycle.

Inverter Type	Efficiency
Si IGBT	93.8%
SiC MOSFET	98.8%

, specifically evaluated over the Worldwide Harmonized Light Vehicles Test Cycle (WLTC). Additionally, Figure 5 demonstrates the percentage decrease in losses when using a SiC inverter compared to a Si IGBT inverter over the WLTC drive cycle. The analysis reveals that, on average, SiC inverters achieve a significant reduction in losses—approximately 73.5%—compared to their Si IGBT counterparts over the mission profile.

Considering an energy consumption rate of 0.2 kWh/km for EVs with a Si IGBT-based inverter, replacing Si with SiC results in a reduction in energy consumption to 0.19 kWh/km based on the efficiency mentioned in Table 3. Given that an EV drives 11,300 km/year and there are 16.5 million EVs on the road globally, the energy-saving potential is significant. Specifically, using SiC EV inverters instead of Si IGBT inverters can save approximately 1.86 TWh of energy annually.

4.7. Battery Storage

The estimated global energy storage capacity installed in 2021 is about 56 GWh [46]. Assuming a 50% depth of discharge for each day in a year, the energy savings for the charge and discharge cycles were estimated for Si- and SiC-based commercial inverters. The assumed efficiencies are 97% for Si [47] and 98.8% [24] for SiC, yielding yearly energy savings of about 370 GWh/year.

5. Discussion

Figure 6 illustrates the global annual energy savings potential by fully replacing commercial Si-based converters with WBG ones across various applications. The motor drive application (including HVAC) shows the highest potential energy savings (103 TWh/year) due to the significant global electricity consumption by motors. In contrast, applications such as data centers, PV systems, and EV charger stations exhibit smaller potential energy savings (<20 TWh/year) because of their lower share in global energy consumption. The battery storage application is not depicted in Figure 6 due to its minimal energy-saving potential (<1 TWh).

PV renewables and electric vehicle (EV) charging stations are anticipated to expand significantly in the coming decades, driven by aggressive market growth. Therefore, evaluating the energy-saving potential is crucial as the technology is expected to be widely adopted. We have estimated the potential energy savings for these applications for the year 2050, based on projected annual consumption and generation for that year. Photovoltaics are expected to generate approximately 13,000 TWh/year in 2050 [48]. The global electric vehicle fleet is projected to reach 672 million vehicles by 2050 [49]. Based on the assumptions made in previous sections (PV power generation and EV fast chargers), we have calculated potential energy savings of 270 TWh/year for PV applications and 33 TWh/year for EV charger applications. Figure 7 illustrates the energy savings for these applications in 2050, highlighting the significant potential of SiC implementation in these areas.

It is crucial to emphasize that the estimates presented in this study are predominantly based on datasheet information. Generally, relying on peak efficiencies provided by the selected products tends to underestimate potential savings in applications where sub-load conditions are prevalent, such as photovoltaic (PV) systems and variable frequency drive (VFD) motors. This underestimation occurs because silicon carbide (SiC) MOSFETs exhibit lower conduction losses compared to silicon (Si) IGBTs under sub-load conditions. For instance, our simulations using professional PV design software have demonstrated that SiC PV inverters can achieve up to 5% higher efficiency than their Si counterparts. In order to enhance the accuracy of these estimations, it is essential to have access to the efficiency curves of commercial converters and incorporate them into simulations that consider representative load profiles. Such detailed data would allow for more precise assessments of energy-saving potential. Despite the current limitations, we anticipate that our findings will encourage the industry to provide more comprehensive data to both academia and customers, thereby improving the accuracy of potential savings estimations. This study further underscores the importance of establishing collaboration between research institutions and industry in order to allow better assessment of systems. By providing detailed efficiency curves and performance data, manufacturers could facilitate more accurate simulations and better inform decision-making processes. This collaborative approach will not only refine energy-saving estimates but also drive the adoption of SiC technology in various applications, ultimately contributing to global energy efficiency goals.

A key takeaway from this study is the increasing implementation of WBG devices by power electronics companies in their next-generation power converter products, indicating a positive trend toward improved energy efficiency. In this context, SiC power semiconductors dominate the higher power segment of converters and are featured in significantly more products than GaN, likely due to its longer market maturity. Additionally, beyond the estimated energy-saving potential, it is crucial to emphasize that the electricity cost savings achieved by adopting WBG converter technologies will have a further positive impact on societal economics.

6. Conclusions

This study examines the energy-saving potential of replacing commercial silicon (Si)-based converters with wide bandgap (WBG) converters across various applications. By focusing on commercial products, we aim to provide a global estimation of the energy-saving potential based on more realistic assumptions of product availability and efficiency values. Our findings indicate that drive applications exhibit substantial potential for the implementation of silicon carbide (SiC) technology, primarily due to their significant global energy consumption. Additionally, our research underscores the future potential of photovoltaic (PV) inverters and electric vehicle (EV) chargers utilizing SiC switches. The rapid expansion of these applications positions SiC as a crucial candidate for reducing power losses.

Moreover, our analysis reveals industrial trends favoring WBG technology for different application segments, highlighting the prospects for its adoption. The study emphasizes that beyond the immediate energy-saving benefits, the integration of WBG converters can lead to considerable electricity cost savings, further influencing societal economics. The aggressive market growth of the PV and EV sectors suggests that SiC technology will play a pivotal role in enhancing energy efficiency and sustainability.

Furthermore, our research aims to foster a deeper understanding and proactive measures among energy scientists and policymakers, who are often not familiar with power electronics and power semiconductor technology. By identifying key applications where WBG devices have realistic potential to significantly impact the future energy landscape, we hope to encourage strategic investments and regulatory support. This work not only provides a comprehensive assessment of current technology trends but also projects the long-term benefits of widespread WBG technology adoption, advocating for its critical role in achieving global energy efficiency goals.