Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators
Abstract
:1. Introduction
2. Methods
2.1. Theory
2.2. Experiment
3. Results and Discussion
3.1. Generalized Boltzmann Approach for Ultrafast Dynamics in Topological Insulators
3.2. Calculations in Equilibrium: Application to BiTe
3.3. Parameter-Sensitive +Boltzmann Approach for the Description of Subpicosecond Electron Dynamics in BiTe
4. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Battiato, M.; Aguilera, I.; Sánchez-Barriga, J. Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators. Materials 2017, 10, 810. https://doi.org/10.3390/ma10070810
Battiato M, Aguilera I, Sánchez-Barriga J. Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators. Materials. 2017; 10(7):810. https://doi.org/10.3390/ma10070810
Chicago/Turabian StyleBattiato, Marco, Irene Aguilera, and Jaime Sánchez-Barriga. 2017. "Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators" Materials 10, no. 7: 810. https://doi.org/10.3390/ma10070810
APA StyleBattiato, M., Aguilera, I., & Sánchez-Barriga, J. (2017). Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators. Materials, 10(7), 810. https://doi.org/10.3390/ma10070810