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Journal: Materials, 2019
Volume: 12
Number: 124
124
Article: Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
Authors: by Toufik Sadi, Cristina Medina-Bailon, Mihail Nedjalkov, Jaehyun Lee, Oves Badami, Salim Berrada, Hamilton Carrillo-Nunez, Vihar Georgiev, Siegfried Selberherr and Asen Asenov
Link: https://www.mdpi.com/1996-1944/12/1/124

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