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10.3390/ma12020266
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Article

Crystallisation Phenomena of In2O3:H Films

by
Ruslan Muydinov
1,*,
Alexander Steigert
2,
Markus Wollgarten
3,
Paweł Piotr Michałowski
4,
Ulrike Bloeck
3,
Andreas Pflug
5,
Darja Erfurt
6,
Reiner Klenk
6,
Stefan Körner
1,
Iver Lauermann
6 and
Bernd Szyszka
1
1
Institute of High-Frequency and Semiconductor System Technologies, Technical University Berlin, Einsteinufer 25, 10587 Berlin, Germany
2
Institute for Nanospectroscopy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489 Berlin, Germany
3
Department of Nanoscale Structures and Microscopic Analysis, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
4
Institute of Electronic Materials Technology, Wolczynska Str. 133, 01919 Warsaw, Poland
5
Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, 38108 Braunschweig, Germany
6
PVcomB, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Schwarzschildstr. 3, 12489 Berlin, Germany
*
Author to whom correspondence should be addressed.
Materials 2019, 12(2), 266; https://doi.org/10.3390/ma12020266
Submission received: 21 November 2018 / Revised: 19 December 2018 / Accepted: 4 January 2019 / Published: 15 January 2019
(This article belongs to the Section Thin Films and Interfaces)
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Abstract

The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infraredspectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O•• and (OH−)O• point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.
Keywords: In2O3:H; thin films; crystallisation; TCO; high mobility In2O3:H; thin films; crystallisation; TCO; high mobility
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MDPI and ACS Style

Muydinov, R.; Steigert, A.; Wollgarten, M.; Michałowski, P.P.; Bloeck, U.; Pflug, A.; Erfurt, D.; Klenk, R.; Körner, S.; Lauermann, I.; et al. Crystallisation Phenomena of In2O3:H Films. Materials 2019, 12, 266. https://doi.org/10.3390/ma12020266

AMA Style

Muydinov R, Steigert A, Wollgarten M, Michałowski PP, Bloeck U, Pflug A, Erfurt D, Klenk R, Körner S, Lauermann I, et al. Crystallisation Phenomena of In2O3:H Films. Materials. 2019; 12(2):266. https://doi.org/10.3390/ma12020266

Chicago/Turabian Style

Muydinov, Ruslan, Alexander Steigert, Markus Wollgarten, Paweł Piotr Michałowski, Ulrike Bloeck, Andreas Pflug, Darja Erfurt, Reiner Klenk, Stefan Körner, Iver Lauermann, and et al. 2019. "Crystallisation Phenomena of In2O3:H Films" Materials 12, no. 2: 266. https://doi.org/10.3390/ma12020266

APA Style

Muydinov, R., Steigert, A., Wollgarten, M., Michałowski, P. P., Bloeck, U., Pflug, A., Erfurt, D., Klenk, R., Körner, S., Lauermann, I., & Szyszka, B. (2019). Crystallisation Phenomena of In2O3:H Films. Materials, 12(2), 266. https://doi.org/10.3390/ma12020266

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