3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Formation of GB on ISP
3.2. APB Formation and Reduction
3.3. GB Interaction and Void Formation
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Conflicts of Interest
References
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Pyramid Size | Pitch |
---|---|
5 × 5 μm2 | 6 × 6 μm2 |
3 × 3 μm2 | 4 × 4 μm2 |
1 × 1 μm2 | 1.4 × 1.4 μm2 |
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Zimbone, M.; Zielinski, M.; Bongiorno, C.; Calabretta, C.; Anzalone, R.; Scalese, S.; Fisicaro, G.; La Magna, A.; Mancarella, F.; La Via, F. 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate. Materials 2019, 12, 3407. https://doi.org/10.3390/ma12203407
Zimbone M, Zielinski M, Bongiorno C, Calabretta C, Anzalone R, Scalese S, Fisicaro G, La Magna A, Mancarella F, La Via F. 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate. Materials. 2019; 12(20):3407. https://doi.org/10.3390/ma12203407
Chicago/Turabian StyleZimbone, Massimo, Marcin Zielinski, Corrado Bongiorno, Cristiano Calabretta, Ruggero Anzalone, Silvia Scalese, Giuseppe Fisicaro, Antonino La Magna, Fulvio Mancarella, and Francesco La Via. 2019. "3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate" Materials 12, no. 20: 3407. https://doi.org/10.3390/ma12203407
APA StyleZimbone, M., Zielinski, M., Bongiorno, C., Calabretta, C., Anzalone, R., Scalese, S., Fisicaro, G., La Magna, A., Mancarella, F., & La Via, F. (2019). 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate. Materials, 12(20), 3407. https://doi.org/10.3390/ma12203407