Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3
Abstract
:1. Introduction
2. Experimental
3. Discussion and Results
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Lee, J.S.; Ahn, T.Y.; Kim, D. Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3. Materials 2019, 12, 3917. https://doi.org/10.3390/ma12233917
Lee JS, Ahn TY, Kim D. Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3. Materials. 2019; 12(23):3917. https://doi.org/10.3390/ma12233917
Chicago/Turabian StyleLee, Jung Sub, Tae Young Ahn, and Daewon Kim. 2019. "Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3" Materials 12, no. 23: 3917. https://doi.org/10.3390/ma12233917