Stress-Induced In Situ Modification of Transition Temperature in VO2 Films Capped by Chalcogenide
Abstract
:1. Introduction
2. Experimental
2.1. Sample Preparation
2.2. Characterization
3. Results
3.1. Optical Reflection
3.2. Electrical Resistance
4. Discussion
5. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Sample | VO2 Thickness (nm) | GST Thickness (nm) | SiNx Layer | Substrate | AD | PA | ||
---|---|---|---|---|---|---|---|---|
Meas. | Ttr (°C) | Meas. | Ttr (°C) | |||||
A | 50 | 5 | No | C-cut Al2O3 | Refl. | 81 | Refl. | 77 |
B | 30 | 200 | No | R-cut Al2O3 | Refl. | 72 | Refl. | 41 |
C | 100 | 200 | Yes | C-cut Al2O3 | R–T | 74 | R–T | 72 |
D | 6 | 200 | Yes | C-cut Al2O3 | R–T | 58 | R–T | 52 |
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Sakai, J.; Kuwahara, M.; Okimura, K.; Uehara, Y. Stress-Induced In Situ Modification of Transition Temperature in VO2 Films Capped by Chalcogenide. Materials 2020, 13, 5541. https://doi.org/10.3390/ma13235541
Sakai J, Kuwahara M, Okimura K, Uehara Y. Stress-Induced In Situ Modification of Transition Temperature in VO2 Films Capped by Chalcogenide. Materials. 2020; 13(23):5541. https://doi.org/10.3390/ma13235541
Chicago/Turabian StyleSakai, Joe, Masashi Kuwahara, Kunio Okimura, and Yoichi Uehara. 2020. "Stress-Induced In Situ Modification of Transition Temperature in VO2 Films Capped by Chalcogenide" Materials 13, no. 23: 5541. https://doi.org/10.3390/ma13235541