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Journal: Materials, 2020
Volume: 13
Number: 899

Article: Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods
Authors: by Huu Trung Nguyen, Hisashi Yamada, Toshikazu Yamada, Tokio Takahashi and Mitsuaki Shimizu
Link: https://www.mdpi.com/1996-1944/13/4/899

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