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Journal: Materials, 2021
Volume: 14
Number: 5474

Article: Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array
Authors: by Hsin-Ying Lee, Day-Shan Liu, Jen-Inn Chyi, Edward Yi Chang and Ching-Ting Lee
Link: https://www.mdpi.com/1996-1944/14/19/5474

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