Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si-B-C-N Materials
Abstract
:1. Introduction
2. Materials and Methods
2.1. Simulation Technique
2.2. List of Simulations
- [Si]/[Si+C] of 0, ≈11, ≈22, ≈33, ≈66 and 100% at [B] = 0,
- [B]/[B+C] of 0, ≈11, ≈22, ≈33, ≈66 and 100% at [Si] = 0 and
- [Si]/[Si+B+C] of, again, 0, ≈11, ≈22, ≈33, ≈66 and 100% at [B]/[C] ≈ 4.
2.3. Reliability of the Simulation Protocol
2.4. Reactive Magnetron Sputtering
- SixC100-x (graphite overlapped by Si plates) at x = 5, 20, 40, 60 and 80%;
- SixB20C80-x (graphite overlapped by Si and B plates) at x = 5, 40, 60 and 75%; and
- Six(B4C)100-x (B4C overlapped by Si plates) at x = 0, 5, 20, 40, 60 and 75%.
3. Results and Discussion
3.1. Maximum Achievable N Content
3.2. Densification and Packing Factor
3.3. Experimental Verification
4. Conclusions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Houska, J. Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si-B-C-N Materials. Materials 2021, 14, 5744. https://doi.org/10.3390/ma14195744
Houska J. Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si-B-C-N Materials. Materials. 2021; 14(19):5744. https://doi.org/10.3390/ma14195744
Chicago/Turabian StyleHouska, Jiri. 2021. "Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si-B-C-N Materials" Materials 14, no. 19: 5744. https://doi.org/10.3390/ma14195744