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10.3390/ma14030663
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Article

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

by
Hongyi Xu
1,
Na Ren
1,2,*,
Jiupeng Wu
1,
Zhengyun Zhu
1,
Qing Guo
1 and
Kuang Sheng
1
1
College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China
2
Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China
*
Author to whom correspondence should be addressed.
Materials 2021, 14(3), 663; https://doi.org/10.3390/ma14030663
Submission received: 12 December 2020 / Revised: 23 January 2021 / Accepted: 25 January 2021 / Published: 31 January 2021
(This article belongs to the Special Issue SiC Materials and Applications)
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Abstract

This paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabricated with high temperature implantation had less defect density in the implant region compared with room temperature implantation, which contributed to higher hole injection in surge current mode and 20% surge capability improvement. In addition, with lower P+ ohmic contact resistance, the device had higher surge capability. When compared to device fabrication with a single Schottky metal layer in the device active area, adding additional P+ ohmic contact on top of the P+ regions in the device active area resulted in the pn junctions sharing a greater portion of surge current, and improved the devices’ surge capability by ~10%.
Keywords: SiC; JBS; MPS; implantation; surge SiC; JBS; MPS; implantation; surge

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MDPI and ACS Style

Xu, H.; Ren, N.; Wu, J.; Zhu, Z.; Guo, Q.; Sheng, K. The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes. Materials 2021, 14, 663. https://doi.org/10.3390/ma14030663

AMA Style

Xu H, Ren N, Wu J, Zhu Z, Guo Q, Sheng K. The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes. Materials. 2021; 14(3):663. https://doi.org/10.3390/ma14030663

Chicago/Turabian Style

Xu, Hongyi, Na Ren, Jiupeng Wu, Zhengyun Zhu, Qing Guo, and Kuang Sheng. 2021. "The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes" Materials 14, no. 3: 663. https://doi.org/10.3390/ma14030663

APA Style

Xu, H., Ren, N., Wu, J., Zhu, Z., Guo, Q., & Sheng, K. (2021). The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes. Materials, 14(3), 663. https://doi.org/10.3390/ma14030663

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