Article Versions Notes

Wang H-C, Liu C-H, Huang C-R, Shih M-H, Chiu H-C, Kao H-L, Liu X. Improved I_on/I_off Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al_0.5GaN Etch-Stop Layer. Materials. 2022; 15(10):3503. https://doi.org/10.3390/ma15103503

Wang, Hsiang-Chun, Chia-Hao Liu, Chong-Rong Huang, Min-Hung Shih, Hsien-Chin Chiu, Hsuan-Ling Kao, and Xinke Liu. 2022. "Improved I_on/I_off Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al_0.5GaN Etch-Stop Layer" Materials 15, no. 10: 3503. https://doi.org/10.3390/ma15103503

Wang, H. -C., Liu, C. -H., Huang, C. -R., Shih, M. -H., Chiu, H. -C., Kao, H. -L., & Liu, X. (2022). Improved I_on/I_off Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al_0.5GaN Etch-Stop Layer. Materials, 15(10), 3503. https://doi.org/10.3390/ma15103503