MDPI and ACS Style
Hospodková, A.; Čížek, J.; Hájek, F.; Hubáček, T.; Pangrác, J.; Dominec, F.; Kuldová, K.; Batysta, J.; Liedke, M.O.; Hirschmann, E.;
et al. Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers. Materials 2022, 15, 6916.
https://doi.org/10.3390/ma15196916
AMA Style
Hospodková A, Čížek J, Hájek F, Hubáček T, Pangrác J, Dominec F, Kuldová K, Batysta J, Liedke MO, Hirschmann E,
et al. Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers. Materials. 2022; 15(19):6916.
https://doi.org/10.3390/ma15196916
Chicago/Turabian Style
Hospodková, Alice, Jakub Čížek, František Hájek, Tomáš Hubáček, Jiří Pangrác, Filip Dominec, Karla Kuldová, Jan Batysta, Maciej O. Liedke, Eric Hirschmann,
and et al. 2022. "Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers" Materials 15, no. 19: 6916.
https://doi.org/10.3390/ma15196916