Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices
Abstract
:1. Introduction
2. Experiments
3. Results and Discussions
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Device Structure | Set Voltage (V) | Reset Voltage (V) | Current Level | On–Off Ratio | Retention (s) | MLC | Synaptic Characteristics |
---|---|---|---|---|---|---|---|
ITO/HfAlO/TaN–NP/HfAlO/ITO | −0.7 | 1 | 10 μA–1 mA | >10 | >104 | O | O |
TiN/Ti/HfAlO/ITO | −0.5 | 0.75 | 10 μA–100 μA | >10 | >104 | O | O |
Au/Ti/HfTiOx/p-Si | 6 | −2.5 | 1 nA–100 μA | >104 | >104 | - | O |
Pt/HfAlOx/TiN | −1.5 | 1.5 | 10 μA–100 μA | >10 | - | O | O |
Ag/FeZnO/Pt | 0.75 | −1 | 10 μA–10 mA | >3.8 × 102 | >107 | - | - |
Ag/FeZnO/MgO/Pt | 1.5 | −1 | 10 nA–10 mA | >9.9 × 105 | >107 | - | - |
Pt/Ti/AlSiOx/W | −0.8 | 1.2 | 100 μA–5 mA | >10 | >104 | O | O |
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Lee, Y.; Jang, J.; Jeon, B.; Lee, K.; Chung, D.; Kim, S. Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices. Materials 2022, 15, 7520. https://doi.org/10.3390/ma15217520
Lee Y, Jang J, Jeon B, Lee K, Chung D, Kim S. Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices. Materials. 2022; 15(21):7520. https://doi.org/10.3390/ma15217520
Chicago/Turabian StyleLee, Yunseok, Jiung Jang, Beomki Jeon, Kisong Lee, Daewon Chung, and Sungjun Kim. 2022. "Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices" Materials 15, no. 21: 7520. https://doi.org/10.3390/ma15217520